scholarly journals Voltage controlled awakening of memristor-like dynamic current–voltage loops of ferroelectric triglycine sulfate

2021 ◽  
Vol 118 (19) ◽  
pp. 192902
Author(s):  
Nicholas V. Morozovsky
Keyword(s):  
Triglycine Sulfate ◽  
Current Voltage

ANALISIS VARIASI JUMLAH SUDU TURBIN BERPENAMPANG PELAT DATAR PADA TURBIN AIR ALIRAN VORTEX DENGAN TIPE SALURAN MASUK INVOLUTE

2020 ◽  
Vol 7 (2) ◽  
pp. 72-78
Author(s):  
Adnan Al Farisi ◽  
Yopi Handoyo ◽  
Taufiqur Rokhman
Keyword(s):  
Power Plant ◽  
Alternative Energy ◽  
Vortex Flow ◽  
Experimental Methods ◽  
Turbine Efficiency ◽  
A Value ◽  
Current Voltage ◽  
Materials Research ◽  
The One ◽  
Flow Vortex

The One of alternative energy that is environmentally friendly is by untilize water energy and turn it into a Microhydro power plant. Microhydro power plant usually made from utilize the waterfall with the head fell. While utilization for streams with a head small drop is not optimal yet. This is a reference to doing research on harnessing the flow of a river that has a value of head low between 0.7 m – 1.4 m with turning it into a Vortex flow (vortex). The purpose of this research is to know  the effect variation number of blade on power and efficiency in the vortex turbine. This research uses experimental methods to find current, voltage, torque and rpm using a reading instrument. The materials research vortex turbine used 6 blade, 8 blade and 10 blade with flat plate. The result showed the highest efficiency is 29,93 % with produce turbine power is 19,58 W, generated on turbine with variation 10 blade with load 3,315 kg and the capacity of water 10,14 l/s. Followed with an efficiency 24,17% and produce turbine power is 15,81 W, generated on turbine with the variation 8 blade with load 3,315 kg and the capacity of water is 10,14 l/s. The the lowest turbine efficiency 22,32% with produce tuebine power 14,60 W, generated on turbine with the variation 6 blade with load 3,315 kg, the capacity of water is 10,14 l/s.

Analysis of the Bias Dependent Spectral Response of a-SiC:H p-i-n Photodiode

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Louro ◽  
A. Fantoni ◽  
Yu. Vygranenko ◽  
M. Fernandes ◽  
M. Vieira
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Spectral Response ◽  
Surface Recombination ◽  
Electrical Field ◽  
Field Reversal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
And Inversion ◽  
Device Operation

AbstractThe bias voltage dependent spectral response (with and without steady state bias light) and the current voltage dependence has been simulated and compared to experimentally obtained values. Results show that in the heterostructures the bias voltage influences differently the field and the diffusion part of the photocurrent. The interchange between primary and secondary photocurrent (i. e. between generator and load device operation) is explained by the interaction of the field and the diffusion components of the photocurrent. A field reversal that depends on the light bias conditions (wavelength and intensity) explains the photocurrent reversal. The field reversal leads to the collapse of the diode regime (primary photocurrent) launches surface recombination at the p-i and i-n interfaces which is responsible for a double-injection regime (secondary photocurrent). Considerations about conduction band offsets, electrical field profiles and inversion layers will be taken into account to explain the optical and voltage bias dependence of the spectral response.

“In-Situ Raman Spectroscopy of Electronic Processes in Fullerene Thin Films

2002 ◽  
Vol 725 ◽  
Author(s):  
S.B. Phelan ◽  
B.S. O'Connell ◽  
G. Farrell ◽  
G. Chambers ◽  
H.J. Byrne
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Low Temperatures ◽  
In Situ Raman Spectroscopy ◽  
State Reduction ◽  
In Situ Raman ◽  
Linear Behavior ◽  
Current Voltage ◽  
Solid State Reduction

AbstractThe current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

2002 ◽  
Vol 719 ◽  
Author(s):  
Galina Khlyap
Keyword(s):  
Room Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Barrier Structure ◽  
Free Charge ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Laser Engineering ◽  
Charged Defects ◽  
Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

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