scholarly journals Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches

APL Materials ◽  
2021 ◽  
Vol 9 (8) ◽  
pp. 081118
Author(s):  
Jianfeng Wang ◽  
Kelsey Fast Jorgensen ◽  
Esmat Farzana ◽  
Kai Shek Qwah ◽  
Morteza Monavarian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Voltage ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Power Switches ◽  
Background Doping

High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
M. J. Jurkovic ◽  
L.K. Li ◽  
B. Turk ◽  
W. I. Wang ◽  
S. Syed ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
High Quality ◽  
Gas Source ◽  
Background Doping ◽  
Shubnikov De Haas Oscillations

AbstractGrowth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

scholarly journals Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 858-863
Author(s):  
Huajie Chen ◽  
A. R. Smith ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
J. E. Northrup
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Parameters ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Group V ◽  
Group Iii ◽  
Ingan Alloys

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy

2009 ◽  
Vol 311 (6) ◽  
pp. 1487-1492 ◽  
Author(s):  
Yuen-Yee Wong ◽  
Edward Yi Chang ◽  
Tsung-Hsi Yang ◽  
Jet-Rung Chang ◽  
Yi-Cheng Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Defect Structure ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Aln Buffer

The effect of growth parameters on CrN thin films grown by molecular beam epitaxy

2011 ◽  
Vol 520 (1) ◽  
pp. 90-94 ◽  
Author(s):  
Y.H. Liu ◽  
Kangkang Wang ◽  
Wenzhi Lin ◽  
Abhijit Chinchore ◽  
Meng Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Parameters

Influence of growth parameters on the optical properties of selective area grown GaN nanorods by plasma-assisted molecular beam epitaxy

2014 ◽  
Vol 151 ◽  
pp. 188-192 ◽  
Author(s):  
Sang-Tae Lee ◽  
R. Saravana Kumar ◽  
Seung-Ki Jeon ◽  
Moon-Deock Kim ◽  
Song-Gang Kim ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Selective Area

scholarly journals Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

2018 ◽  
Vol 9 ◽  
pp. 146-154 ◽  
Author(s):  
Alexey D Bolshakov ◽  
Alexey M Mozharov ◽  
Georgiy A Sapunov ◽  
Igor V Shtrom ◽  
Nickolay V Sibirev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Density ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Elongation Rate ◽  
The Novel ◽  
Geometrical Properties ◽  
Transmission Electron ◽  
Si Doped ◽  
Aln Buffer

In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires. It has been experimentally demonstrated that the NW elongation rate and the surface density drastically depend on the substrate growth temperature, where 800 °C corresponds to the maximum elongation rate of the NWs. In the second part of the study, we introduce a new dopant-stimulated method for GaN nanotube-like nanostructure synthesis using a high-intensity Si flux. Transmission electron microscopy was used to investigate the morphological features of the GaN nanostructures. The synthesized structures have a hexagonal cross-section and possess high crystal quality. We propose a theoretical model of the novel nanostructure formation which includes the role of the dopant Si. Some of the Si-doped samples were studied with the photoluminescence (PL) technique. The analysis of the PL spectra shows that the highest value of donor concentration in the nanostructures exceeds 5∙1019 cm−3.

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