scholarly journals Broadband high-efficiency dielectric metasurfaces for the visible spectrum

2016 ◽  
Vol 113 (38) ◽  
pp. 10473-10478 ◽  
Author(s):  
Robert C. Devlin ◽  
Mohammadreza Khorasaninejad ◽  
Wei Ting Chen ◽  
Jaewon Oh ◽  
Federico Capasso

Metasurfaces are planar optical elements that hold promise for overcoming the limitations of refractive and conventional diffractive optics. Original dielectric metasurfaces are limited to transparency windows at infrared wavelengths because of significant optical absorption and loss at visible wavelengths. Thus, it is critical that new materials and nanofabrication techniques be developed to extend dielectric metasurfaces across the visible spectrum and to enable applications such as high numerical aperture lenses, color holograms, and wearable optics. Here, we demonstrate high performance dielectric metasurfaces in the form of holograms for red, green, and blue wavelengths with record absolute efficiency (>78%). We use atomic layer deposition of amorphous titanium dioxide with surface roughness less than 1 nm and negligible optical loss. We use a process for fabricating dielectric metasurfaces that allows us to produce anisotropic, subwavelength-spaced dielectric nanostructures with shape birefringence. This process is capable of realizing any high-efficiency metasurface optical element, e.g., metalenses and axicons.

Nanophotonics ◽  
2019 ◽  
Vol 8 (7) ◽  
pp. 1279-1289 ◽  
Author(s):  
Ze-Peng Zhuang ◽  
Rui Chen ◽  
Zhi-Bin Fan ◽  
Xiao-Ning Pang ◽  
Jian-Wen Dong

AbstractVector beams with phase modulation in a high numerical aperture system are able to break through the diffraction limit. However, the implementation of such a device requires a combination of several discrete bulky optical elements, increasing its complexity and possibility of the optical loss. Dielectric metalens, an ultrathin and planar nanostructure, has a potential to replace bulky optical elements, but its optimization with full-wave simulations is time-consuming. In this paper, an accurate and efficient theoretical model of planar metalens is developed. Based on this model, a twofold optimization scheme is proposed for optimizing the phase profile of metalenses so as to achieve subdiffraction focusing with high focusing efficiency. Then, a metalens that enables to simultaneously generate radially polarized beam (RPB) and modulate its phase under the incidence of x-polarized light with the wavelength of 532 nm is designed. Full-wave simulations show that the designed metalens of NA = 0.95 can achieve subdiffraction focusing (FWHM = 0.429λ) with high transmission efficiency (77.6%) and focusing efficiency (17.2%). Additionally, superoscillation phenomenon is found, leading to a compromise between the subdiffraction spot and high efficiency. The proposed method may provide an accurate and efficient way to achieve sub-wavelength imaging with the expected performances, which shows a potential application in super-resolution imaging.


2018 ◽  
Vol 6 (22) ◽  
pp. 10176-10183 ◽  
Author(s):  
Zhipeng Kan ◽  
Zhenwei Wang ◽  
Yuliar Firdaus ◽  
Maxime Babics ◽  
Husam N. Alshareef ◽  
...  

An aluminum doped zinc oxide electrode grown by atomic layer deposition for polymer solar cells outperforms ITO in high performance PSCs.


2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


2012 ◽  
Vol 24 (7) ◽  
pp. 1255-1261 ◽  
Author(s):  
Xinyi Chen ◽  
Ekaterina Pomerantseva ◽  
Parag Banerjee ◽  
Keith Gregorczyk ◽  
Reza Ghodssi ◽  
...  

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jun Yin ◽  
Lian Liu ◽  
Yashu Zang ◽  
Anni Ying ◽  
Wenjie Hui ◽  
...  

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.


Solar RRL ◽  
2021 ◽  
pp. 2100181
Author(s):  
Yali Sun ◽  
Pengfei Qiu ◽  
Siyu Wang ◽  
Hongling Guo ◽  
Rutao Meng ◽  
...  

2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...


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