scholarly journals Mutants of Arabidopsis thaliana defective in the acquisition of tolerance to high temperature stress

2000 ◽  
Vol 97 (8) ◽  
pp. 4392-4397 ◽  
Author(s):  
S.-W. Hong ◽  
E. Vierling
Genome ◽  
2005 ◽  
Vol 48 (3) ◽  
pp. 547-555 ◽  
Author(s):  
Lester W Young ◽  
Rebecca H Cross ◽  
S Ashley Byun-McKay ◽  
Ron W Wilen ◽  
Peta C Bonham-Smith

Transcriptional activity of a 573-bp fragment of HSP101 (At1g74310) incorporated into a Mutator-like element (MULE) transposon was investigated in Arabidopsis thaliana Columbia. Sequence identity between the HSP101-MULE arrangement and a continuous segment of the original HSP101 promoter, 5' UTR exon, and open reading frame (ORF) was high (87%) but lower in the 5' UTR intron (69%). Collectively, the HSP101 ORF, the MULE 5' terminal inverted repeat (TIR), and the 1.3 kb immediately upstream of the TIR is located on chromosome IV, and we refer to it as HSP101B. Located within the HSP101B promoter, upstream of 2 heat shock elements (HSEs), are 4 COR15a-like low-temperature response elements (LTREs). The HSP101B ORF was transcribed in the leaves and inflorescences of high-temperature stress (HTS) treated Arabidopsis thaliana but not in low-temperature stress (LTS) and control plants. Transiently transformed Arabidopsis seedlings, as well as stable transformed lines of Linum usitatissimum (flax) and Brassica napus (canola) containing a HSP101B promoter:GUS construct, showed either LTS-, or LTS- and HTS-, induced β-glucuronidase expression. Results from PCR amplifications of HpaII- and MspI-digested Arabidopsis genomic DNA suggest that endogenous expression of HSP101B may be downregulated by partial methylation of the HSP101B sequence between the TIRs of the associated MULE.Key words: promoter function, low temperature stress, high temperature stress; Arabidopsis HSP101, Mutator-like element, transposon.


2020 ◽  
Vol 53 (2) ◽  
Author(s):  
Khalil Ahmed Laghari ◽  
Abdul Jabbar Pirzada ◽  
Mahboob Ali Sial ◽  
Muhammad Athar Khan ◽  
Jamal Uddin Mangi

2020 ◽  
Vol 52 (5) ◽  
Author(s):  
De-Gong Wu ◽  
Qiu-Wen Zhan ◽  
Hai-Bing Yu ◽  
Bao-Hong Huang ◽  
Xin-Xin Cheng ◽  
...  

Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.


2020 ◽  
Vol 16 (2) ◽  
pp. 18-23
Author(s):  
K. PRAVALLIKA ◽  
C. ARUNKUMAR ◽  
A. VIJAYKUMAR ◽  
R. BEENA ◽  
V. G. JAYALEKSHMI

Plants ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 687
Author(s):  
Chan Seop Ko ◽  
Jin-Baek Kim ◽  
Min Jeong Hong ◽  
Yong Weon Seo

High-temperature stress during the grain filling stage has a deleterious effect on grain yield and end-use quality. Plants undergo various transcriptional events of protein complexity as defensive responses to various stressors. The “Keumgang” wheat cultivar was subjected to high-temperature stress for 6 and 10 days beginning 9 days after anthesis, then two-dimensional gel electrophoresis (2DE) and peptide analyses were performed. Spots showing decreased contents in stressed plants were shown to have strong similarities with a high-molecular glutenin gene, TraesCS1D02G317301 (TaHMW1D). QRT-PCR results confirmed that TaHMW1D was expressed in its full form and in the form of four different transcript variants. These events always occurred between repetitive regions at specific deletion sites (5′-CAA (Glutamine) GG/TG (Glycine) or (Valine)-3′, 5′-GGG (Glycine) CAA (Glutamine) -3′) in an exonic region. Heat stress led to a significant increase in the expression of the transcript variants. This was most evident in the distal parts of the spike. Considering the importance of high-molecular weight glutenin subunits of seed storage proteins, stressed plants might choose shorter polypeptides while retaining glutenin function, thus maintaining the expression of glutenin motifs and conserved sites.


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