Thin Film Properties of Sol-Gel Derived High-K Lanthanum-Doped Zirconium Oxides

2009 ◽  
Vol 384 (1) ◽  
pp. 126-133 ◽  
Author(s):  
Ho-Seung Jeon ◽  
Joo-Nam Kim ◽  
Gwang-Geun Lee ◽  
Yun-Soo Choi ◽  
Byung-Eun Park
2013 ◽  
Vol 138 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Sungho Choi ◽  
Byung-Yoon Park ◽  
Sunho Jeong ◽  
Ji-Yoon Lee ◽  
Beyong-Hwan Ryu ◽  
...  

1991 ◽  
Vol 239 ◽  
Author(s):  
S. M. Melpolder ◽  
A. W. West ◽  
C. L. Bauer

ABSTRACTKnoop hardness and nanoindentation studies were performed on single and multilayered 80/20 mol % TiO2/SiO2 films spin-coated onto [100] silicon wafers. The Knoop microhardness results indicated that a total sol-gel thickness (h) to indentation depth (h*) ratio of >2 was sufficient to obtain reliable thin film properties independent of substrate influence. Electron microscopy techniques were used to determine the sample's absolute film thickness, to examine the morphology of the indentations, and to determine the phase of the sol-gel thin films.


2010 ◽  
Vol 1247 ◽  
Author(s):  
Chen-Guan Lee ◽  
Soumya Dutta ◽  
Ananth Dodabalapur

AbstractWe demonstrate high performance zinc-tin oxide (ZTO) thin-film transistors (TFTs) with low operation voltage, small channel length and low parasitic capacitance. Both the zinc tin oxide and the high-k dielectric, ZrO2, were solution processed by sol-gel methods. A self-aligned process was employed to minimize the parasitic capacitance. The transistors with a channel length of 8 μm operate at 5 V and have a saturation mobility of 2.5 cm2/V·s and an on/off ratio of 5.9×106. Gate-induced surface relief has been found to have strong effect on the performance of the active layer.


2021 ◽  
Author(s):  
Guandong Wang ◽  
Daiming Liu ◽  
Shuangqing Fan ◽  
Zhaoyang Li ◽  
jie su

Soft Matter ◽  
2019 ◽  
Vol 15 (40) ◽  
pp. 8022-8031
Author(s):  
Han-Liou Yi ◽  
Chi-Chung Hua

The present report reveals an unconventional way by which the molecular weight of a conjugated polymer can impact its solution, sol, gel and thin film properties.


2018 ◽  
Vol 44 (8) ◽  
pp. 9125-9131 ◽  
Author(s):  
Wenwen Xia ◽  
Guodong Xia ◽  
Guangsheng Tu ◽  
Xin Dong ◽  
Sumei Wang ◽  
...  

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).


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