Investigation of nanoscale domain switching of 0.94 Na0.5 Bi0.5TiO3-0.06 BaTiO3 thin film under different temperatures by piezoresponse force microscopy

2016 ◽  
Vol 493 (1) ◽  
pp. 25-29
Author(s):  
K. Zhan ◽  
M. Su ◽  
H. Han ◽  
X. Y. Wang
Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1327 ◽  
Author(s):  
Ursic ◽  
Bencan ◽  
Prah ◽  
Dragomir ◽  
Malic

A complex domain structure with variations in the morphology is observed at ambient temperature in monoclinic Pb(Fe1/2Nb1/2)O3. Using electron microscopy and piezoresponse force microscopy, it is possible to reveal micrometre-sized wedge, lamellar-like, and irregularly shaped domains. By increasing the temperature, the domain structure persists up to 80 °C, and then starts to disappear at around 100 °C due to the proximity of the ferroelectric–paraelectric phase transition, in agreement with macroscopic dielectric measurements. In order to understand to what degree domain switching can occur in the ceramic, the mobility of the domain walls was studied at ambient temperature. The in situ poling experiment performed using piezoresponse force microscopy resulted in an almost perfectly poled area, providing evidence that all types of domains can be easily switched. By poling half an area with 20 V and the other half with −20 V, two domains separated by a straight domain wall were created, indicating that Pb(Fe1/2Nb1/2)O3 is a promising material for domain-wall engineering.


2005 ◽  
Vol 81 (6) ◽  
pp. 1207-1212 ◽  
Author(s):  
R. Poyato ◽  
M.L. Calzada ◽  
V.V. Shvartsman ◽  
A. Kholkin ◽  
P. Vilarinho ◽  
...  

2019 ◽  
Vol 09 (03) ◽  
pp. 1950025
Author(s):  
Dionizy Czekaj ◽  
Agata Lisińska-Czekaj

Research on synthesis, characterization and determination of processing — structure — property relationships of commercially important ferroelectric thin films has been performed. The sol–gel type solution deposition technique was applied to produce good quality thin films of [Formula: see text][Formula: see text]TiO3 (BST60/40) chemical composition on the stainless steel substrates. The thin films were characterized in terms of their microstructure, crystal structure, phase composition, piezoelectric and dielectric properties. It was found that the BST60/40 thin film adopted the cubic structure at room temperature with an elementary cell parameter [Formula: see text] Å. Morphology of the thin film surface was studied with Atomic Force Microscopy (AFM). Average roughness of the thin films surface was found ([Formula: see text]m). Piezoresponse Force Microscopy (PFM) was applied for the thin film characterization. Active piezoelectric regions were found in BST60/40 thin film. Therefore, dielectric response measured at room temperature was studied in assumption of piezoelectric electric equivalent circuit.


2001 ◽  
Vol 708 ◽  
Author(s):  
Ricardo Ruiz ◽  
Leonard C. Feldman ◽  
Richard F. Haglund ◽  
Rodney A. McKee ◽  
Norbert Koch ◽  
...  

ABSTRACTPentacene thin films were grown in ultra high vacuum on amorphous SiO2 and on a high dielectric constant material, crystalline BaTiO3. During pentacene deposition, substrates were held at three different temperatures (-650, 250 and 750 C). In general, three different morphologies were identified: a first closed interfacial layer, a thin film mode composed of faceted grains with single molecule step height, and a volume mode with features substantially higher than those of the thin film mode. Analysis was carried out by atomic force microscopy and in some cases by synchrotron X-ray diffraction.


2005 ◽  
Vol 120 (1-3) ◽  
pp. 104-108 ◽  
Author(s):  
H.R. Zeng ◽  
H.F. Yu ◽  
X.G. Tang ◽  
R.Q. Chu ◽  
G.R. Li ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document