Dependence of the Breakdown Voltage of 4H-SiC MESFET’s on the Field Plate and Step-Channel

The breakdown mechanism of the 4H-SiC metal-semiconductor field effect transistor (4H-SiC MESFET) at a large drain bias is explored and the dependence of breakdown voltage on the field-plate and the step-channel is investigated by simulation. The results revealed that the breakdown occurs at the corner of the gate near to the drain. The channel step and the field-plate length have sensitive effect on the breakdown voltage. The breakdown characteristics are improved since the electric field peak is lowered at breakdown point in the step-channel and field-plate structures. The largest breakdown voltage can be achieved by optimizing the field-plate length.

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A 600V-Class Partial SOI LDMOS with Step-Doped Drift Region

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1096.514 ◽

2015 ◽

Vol 1096 ◽

pp. 514-519

Author(s):

Yue Hu ◽

Hao Wang ◽

De Wen Wang ◽

Cai Xia Du ◽

Miao Miao Ma ◽

...

Keyword(s):

Breakdown Voltage ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Drift Region ◽

Impurity Atoms ◽

Surface Field ◽

Field Peak ◽

Effect Transistor

A 600V-class lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with step-doped drift region (SDD) in partial silicon-on-insulator (PSOI) is introduced to improve breakdown voltage (BV) and reduce on-resistance (Ron). The step-doped method induces an electric field peak in the surface of the device, which can reduce the surface field in the device and adjust the doping accommodation in the drift region. The adjusted drift region can allow higher doping concentration under the drain end which results in higher breakdown voltage, and accommodate more impurity atoms as a whole which provides more electrons to support higher current and thus reduce on-resistance.

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TCAD-Based Optimization of Field Plate Length & Passivation Layer of AlGaN/GaN HEMT for Higher Cut-Off Frequency & Breakdown Voltage

IETE Technical Review ◽

10.1080/02564602.2020.1824624 ◽

2020 ◽

pp. 1-9 ◽

Cited By ~ 1

Author(s):

Neha ◽

Vandana Kumari ◽

Mridula Gupta ◽

Manoj Saxena

Keyword(s):

Breakdown Voltage ◽

Passivation Layer ◽

Field Plate ◽

Gan Hemt ◽

Plate Length

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High breakdown voltage of boron-doped diamond metal semiconductor field effect transistor grown on freestanding heteroepitaxial diamond substrate

Diamond and Related Materials ◽

10.1016/j.diamond.2021.108782 ◽

2021 ◽

pp. 108782

Author(s):

Uiho Choi ◽

Taemyung Kwak ◽

Sanghoon Han ◽

Seong-Woo Kim ◽

Okhyun Nam

Keyword(s):

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Boron Doped Diamond ◽

High Breakdown Voltage ◽

Boron Doped ◽

Diamond Substrate ◽

Effect Transistor

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An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽

10.3390/mi9110573 ◽

2018 ◽

Vol 9 (11) ◽

pp. 573 ◽

Cited By ~ 6

Author(s):

Hujun Jia ◽

Mei Hu ◽

Shunwei Zhu

Keyword(s):

Breakdown Voltage ◽

Threshold Voltage ◽

High Power ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Power Added Efficiency ◽

Effect Transistor ◽

The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

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5A 1300V Trenched and Implanted 4H-SiC Vertical JFET

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.229-231.824 ◽

2012 ◽

Vol 229-231 ◽

pp. 824-827 ◽

Cited By ~ 4

Author(s):

Gang Chen ◽

Xiao Feng Song ◽

Song Bai ◽

Li Li ◽

Yun Li ◽

...

Keyword(s):

Ohmic Contact ◽

Field Effect ◽

Field Effect Transistor ◽

Vertical Channel ◽

Drain Current ◽

Gate Bias ◽

Blocking Voltage ◽

Drain Bias ◽

Effect Transistor ◽

Lift Off

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at gate bias VG = -6V and forward drain current is in excess of 5A at gate bias VG = 3V and drain bias VD = 3V. The SiC VJFET device’s current density is 240A/cm2 at VG= 3V and VD = 3V, with related specific on-resistance 8.9mΩ•cm2. Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance and the bonding spun gold. The specific on-resistance can be further reduced by improving the doping concentration of SiC channel epilayer and the device’s ohmic contact.

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