scholarly journals Déposition par Pulvé Risation Cathodique Radio Fréquence et Caracté Risation Électronique, Structurale et Optique de Couches Minces du Dioxyde de Titane

2004 ◽  
Vol 27 (3) ◽  
pp. 169-181 ◽  
Author(s):  
K. Hafidi ◽  
M. Azizan ◽  
Y. Ijdiyaou ◽  
E. L. Ameziane
Keyword(s):  
Thin Films ◽  
Titanium Oxide ◽  
Incidence Angle ◽  
Glass Structure ◽  
Grazing Incidence ◽  
Visible Range ◽  
Infrared Range ◽  
Oxide Thin Films ◽  
X Ray ◽  
Deposited Films

Deposited titanium oxide thin films are used as optical protector films for several materials and as energy converters for solar cells. In this work, titanium oxide thin films are deposited on c-Si and glass substrates by reactive radiofrequency sputtering. All the deposits are grown at ambient temperature and the sputtering gas is a mixture of oxygen and argon with an overall pressure of10−2mbar. The oxygen partial pressure ratios varies from 5% to 20%.Characterization of deposited films is made by grazing incidence X-ray diffraction (GIXD), grazing incidence X-ray reflection (GIXR), X-ray photoemission spectroscopy (XPS) and optical transmission spectroscopy. The characterization results reveal that deposited films of TiO2 are polycrystalline and present both rutile and anatase phases. The chemical composition of raw films in Ti:O ratio is equal to 1:2.02, and the titanium at surface is completely oxidized. In fact, the Ti2p core level behavior shows that the oxidization state of Ti is equal to+4.The specularily reflected intensity according to incidence angle of the X-ray on TiO2/glass structure shows one critical angle attributed to the TiO2 film equal to 0.283º. This angle value involves film density between rutile and anatase phases. The optical characterization shows that TiO2 thin films obtained are transparent in visible range, and have a refraction index value equal to 2.45 and when extrapolated to infrared range, it is equal to 2.23. The value of gap energy (3.35 eV) is deduced from variation of absorption coefficient versus incident radiation energy.

X-ray, optical and electrical characterization of doped nanocrystalline titanium oxide thin films

2004 ◽  
Vol 109 (1-3) ◽  
pp. 249-251 ◽  
Author(s):  
J Domaradzki ◽  
E.L Prociow ◽  
D Kaczmarek ◽  
T Berlicki ◽  
A Podhorodecki ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Oxide ◽  
Electrical Characterization ◽  
Oxide Thin Films ◽  
X Ray ◽  
Nanocrystalline Titanium

Grazing incidence synchrotron x-ray diffraction method for analyzing thin films

1987 ◽  
Vol 2 (4) ◽  
pp. 471-477 ◽  
Author(s):  
G. Lim ◽  
W. Parrish ◽  
C. Ortiz ◽  
M. Bellotto ◽  
M. Hart
Keyword(s):  
Thin Films ◽  
Penetration Depth ◽  
Incidence Angle ◽  
Depth Profiling ◽  
Diffraction Method ◽  
Grazing Incidence ◽  
Parallel Beam ◽  
X Ray ◽  
Small Incidence ◽  
Iron Oxide Films

A method using synchrotron radiation parallel beam x-ray optics with a small incidence angle α on the specimen and 2Θ-detector scanning is described for depth profiling analysis of thin films. The instrumentation is the same as used for Θ:2Θ synchrotron parallel beam powder diffractometry, except that the specimen is uncoupled from the detector. There is no profile distortion. Below the critical angle for total reflection αc, the top tens of Angstroms are sampled. Depth profiling is controlled to a few Angstroms using a small α and 0.005° steps. The penetration depth increases to several hundred Angstroms as α approaches αc. Above αc there is a rapid increase in penetration depth to a thousand Angstroms or more and the profiling cannot be sensitively controlled. At grazing incidence the peaks are shifted several tenths of a degree by the x-ray refraction and an experimental procedure for calculating the shifts is described. The method is illustrated with an analysis of iron oxide films.

Structural and Optical Properties of ZrO2 Thin Films Deposited by Reactive DC Unbalanced Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 374-377
Author(s):  
Nirun Witit-Anun ◽  
Surasing Chaiyakun
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Constants ◽  
Phase 1 ◽  
Grazing Incidence ◽  
Visible Range ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Surface Morphologies ◽  
Deposited Films

Zirconium oxide (ZrO2) thin films were deposited on Si-wafer and glass slide substrates by reactive DC unbalanced magnetron sputtering at different deposition times. A pure metallic zirconium target (99.97%) was sputtered in a gas mixture of argon and oxygen. The crystal structure was characterized by GI-XRD (grazing-incidence X-ray diffraction) whereas surface morphologies and films thickness were evaluated by AFM (atomic force microscopy). The transmittance spectrum was measured by spectrophotometer. The optical constants of the as-deposited films were calculated by Swanepoel method. It was found that the ZrO2films deposited on silicon substrates showed a highly monoclinic phase (-1 1 1). The as-deposited films showed high transmittance in visible range. The thickness and roughness varied from 155 nm to 502 nm and 3.1 nm to 3.6 nm, respectively, with increasing of deposition times. The optical constants namely refractive index (n) and extinction coefficient (k), at 550 nm, was about 1.9 - 2.1 and 0.0003 - 0.0009, respectively. In addition, the energy band gap (Eg) of the as-deposited film was approximately 4.17 eV.

Anomalous peaks in grazing incidence thin film X-ray diffraction

1994 ◽  
Vol 9 (1) ◽  
pp. 44-49 ◽  
Author(s):  
Richard A. Vaia ◽  
Maura S. Weathers ◽  
William A. Bassett
Keyword(s):  
Thin Films ◽  
Incidence Angle ◽  
Incident Angle ◽  
Grazing Incidence ◽  
Sample Surface ◽  
X Ray ◽  
Polymeric Thin Films ◽  
Diffraction Geometry ◽  
Sample Orientation ◽  
Diffuse Surface

Numerous spurious X-ray peaks were encountered during grazing incidence angle diffractometer scans of ceramic and polymeric thin films on crystalline and amorphous substrate materials. At least three possible sources of spurious peaks are identified. (1) At (2θ) values greater than ∼ 10°, Laue reflections from characteristic and Bremsstrahlung continuum radiation produce spurious peaks with a (2θ) dependence on X-ray incident angle and sample orientation. At (2θ) values less than 10°, (2) specular X-ray reflection from a boundary between two media of different indices of refraction and (3) diffuse surface scattering produces spurious peaks with a dependence on X-ray incident angle and sample surface topography. From an understanding of the spurious peaks, improved experimental techniques may be developed. Because these peaks can interfere significantly with grazing incidence diffractometer scans, it is particularly important to those making studies of thin films by this asymmetric diffraction geometry to be aware of the existence and origins of these spurious peaks.

Spectroscopic Study of Titanium Oxide Thin Films at Low Temperatures by X-ray Diffraction, Raman Scattering, Fourier Transform Infrared Spectroscopy and Photoluminescence

2006 ◽  
Vol 928 ◽  
Author(s):  
Zhiwei Zhao ◽  
Beng Kang Tay
Keyword(s):  
Thin Films ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Spectroscopic Study ◽  
Titanium Oxide ◽  
Low Temperatures ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray

ABSTRACTTitanium oxide thin films were prepared by filtered cathodic vacuum arc (FCVA) at low temperatures ranged from room temperature to 330°C. Spectroscopic study of the deposited films were carried out by X-ray diffraction, Raman Scattering, Fourier transform infrared spectroscopy (FTIR) and photoluminescence (PL), respectively. The films remained amorphous up to the substrate temperature of 230°C. Nanocrystalline titanium oxide thin films occurred at 330°C with the strongest peak intensity from anatase (101) plane. The average grain size was around 20 nm and no rutile phase could be found. Various allowed vibrational frequencies (e.g. 152, 199, 399, 640 cm−1) in Raman spectra and Ti-O-Ti transverse mode at 436 cm−1 in the FTIR spectrum evidently verified the presence of anatase phase in the films at 330°C. Moreover, at room temperature only crystalline film exhibited a PL peak with the center at 379 nm in PL spectrum and the origin was discussed.

scholarly journals Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering

2017 ◽  
Vol 121 (20) ◽  
pp. 205306 ◽  
Author(s):  
G. B. González ◽  
J. S. Okasinski ◽  
D. B. Buchholz ◽  
J. Boesso ◽  
J. D. Almer ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Indium Oxide ◽  
Grazing Incidence ◽  
Ex Situ ◽  
Wide Angle ◽  
Oxide Thin Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications

Nanoscale ◽  
2020 ◽  
Vol 12 (24) ◽  
pp. 13103-13112
Author(s):  
Ann-Christin Dippel ◽  
Olof Gutowski ◽  
Lars Klemeyer ◽  
Ulrich Boettger ◽  
Fenja Berg ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Short Range ◽  
Short Range Order ◽  
Incidence Angle ◽  
Grazing Incidence ◽  
Distribution Functions ◽  
Individual Layer ◽  
X Ray ◽  
Pair Distribution Functions

The local atomic structure of two stacked thin films is probed by applying grazing incidence x-ray total scattering at variable incidence angle and resolving pair distribution functions for each individual layer.

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