Ultralow dielectric loss of Y and Mn alternately doped nonstoichiometric BST films

2018 ◽  
Vol 191 (1) ◽  
pp. 158-168
Author(s):  
Xiong Fang Huang ◽  
Meng Qiang Wu ◽  
Jia Xuan Liao ◽  
Zi Qiang Xu ◽  
Feng Gong ◽  
...  
Keyword(s):  
2002 ◽  
Vol 17 (11) ◽  
pp. 2831-2836 ◽  
Author(s):  
Young-Ah Jeon ◽  
Woong-Chul Shin ◽  
Tae-Suck Seo ◽  
Soon-Gil Yoon

The absence of a low dielectric constant layer at the barium strontium titanate (BST)/Pt interface and a decreased roughness are critical issues in the production of (Ba0.5Sr0.5)TiO3 thin films with high tunabilities and low losses. An improvement in dielectric properties was achieved by the insertion of seed layers at the BST/Pt interface by pulsed laser deposition. The higher tunability can be attributed to (100) texturing of the BST films, which is independent of grain size and grain morphologies, thus leading to a variation in seed layer thicknesses. The tunability and dielectric constant of 1600-Å-thick BST films showed a maximum of 53% and 720, respectively, at a seed layer thickness of 100 Å. Dielectric loss is dependent on the roughness of BST films and reached a minimum of 0.8% at a root mean square roughness of 28 Å. The maximum figures of merit, defined as the ratio of tunability to dielectric loss, of approximately 58 at 100 kHz and 198 kV/cm were obtained at a seed layer thickness of 70 Å. The optimized seed layer thickness for BST deposition onto Pt/Ti/SiO2/Si substrates plays an important role in maintaining the high tunabilities and low loss, which are suitable for microwave device applications.


1985 ◽  
Vol 46 (C10) ◽  
pp. C10-565-C10-568
Author(s):  
M. WELLER ◽  
C. A. WERT ◽  
D. SCHLEE
Keyword(s):  

2015 ◽  
Vol 9 (1) ◽  
pp. 566-570
Author(s):  
Zhang Ji ◽  
Jianfeng Zheng

Precise measurement of dielectric loss angle is very important for electric capacity equipment in recent power systems. When signal-to-noise is low and fundamental frequency is fluctuating, aiming at the measuring error of dielectric loss angle based on some recent Fourier transform and wavelet transform harmonics analysis method, we propose a novel algorithm based on sparse representation, and improved it to be more flexible for signal sampling. Comparison experiments describe the advantages of our method.


2018 ◽  
Vol 6 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
Yang Liu ◽  
Cheng Zhang ◽  
Benyuan Huang ◽  
Xu Wang ◽  
Yulong Li ◽  
...  

A novel skin–core structured fluorinated MWCNT nanofiller was prepared to fabricate epoxy composite with broadband high dielectric constant and low dielectric loss.


1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.


Sign in / Sign up

Export Citation Format

Share Document