PTFE electret negative charge stability after RF plasma treatment

2002 ◽  
Vol 35 (22) ◽  
pp. 2939-2944 ◽  
Author(s):  
Qiang Chen
Keyword(s):  
Plasma Treatment ◽  
Negative Charge ◽  
Rf Plasma ◽  
Charge Stability

Influence of Hydrogen Plasma Treatment Upon Native Oxides Plasma Grown on INP

1992 ◽  
Vol 284 ◽  
Author(s):  
E. D. Belyakova ◽  
S. V. Belyakov ◽  
L. S. Berman ◽  
A. T. Gorelenok ◽  
I. N. Karimov ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Negative Charge ◽  
Hydrogen Plasma ◽  
Flat Band ◽  
Band Shift ◽  
Native Oxides ◽  
Effective Oxide Charge ◽  
Reduced Density ◽  
Density Of Interface States ◽  
Mis Structures

Investigations of plasma grown native oxides on indium phosphide carried out recently [1,2] have shown that these oxides exhibit properties which are promising to be used in MIS structures on InP, due to their stable composition which includes [InxPyOz]n polyphosphate phase mainly and due to reduced density of interface states (Nss<1011 eV−1 cm−2). It has been shown also that MIS structures with plasma native oxides exhibit C-V characteristics shifted towards positive values of voltage bias. The flat band shift is assigned to a negative charge injected into oxide film during plasma oxidation. The presence of this negative charge in plasma grown native oxides on InP may cause instability of electric properties of MIS structures [2].The aim of this work was to make an attempt to influence upon negative effective oxide charge density by means of hydrogen plasma treatment.

Effect of RF Plasma Treatment of Plastic Substrates on the Properties of ZnO Thin Films

2010 ◽  
Vol 56 (1(2)) ◽  
pp. 388-392 ◽  
Author(s):  
Eui-Jung Yun ◽  
Jin-Woo Jung ◽  
Young-Wook Song ◽  
Hyoung G Nam ◽  
Nam-Ihn Cho
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Zno Thin Films ◽  
Rf Plasma ◽  
Plastic Substrates

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures

2011 ◽  
Vol 276 ◽  
pp. 21-25
Author(s):  
S.O. Gordienko ◽  
A. Nazarov ◽  
A.V. Rusavsky ◽  
A.V. Vasin ◽  
N. Rymarenko ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Plasma Treatment ◽  
Structural Characteristics ◽  
Hydrogen Plasma ◽  
Rf Plasma ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Variable Range Hopping ◽  
Si Substrate ◽  
Sic Film

This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.

Effect of Low Temperature RF Plasma Treatment on Electrical Properties of Junctionless InGaAs MOSFETs

2019 ◽  
Vol 8 (2) ◽  
pp. Q24-Q31
Author(s):  
Y. V. Gomeniuk ◽  
Y. Y. Gomeniuk ◽  
T. E. Rudenko ◽  
P. N. Okholin ◽  
V. I. Glotov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Rf Plasma

scholarly journals Fecal Coliforms and Total Coliforms Removal in Water Using Radio-Frequency (RF) Plasma System

2015 ◽  
Vol 9 (7) ◽  
pp. 80 ◽  
Author(s):  
Reni Desmiarti ◽  
Ariadi Hazmi ◽  
Yenni Trianda
Keyword(s):  
Drinking Water ◽  
Radio Frequency ◽  
Plasma Treatment ◽  
Death Rate ◽  
Fecal Coliforms ◽  
Rf Plasma ◽  
Radio Frequency Plasma ◽  
Plasma System ◽  
Total Coliforms ◽  
Frequency Plasma

A radio-frequency plasma system (RF) was used to investigate the removal of microorganisms from water.Plasma generated by RF radiation can produce active compounds (H•, •OH, H2O2, O3, etc.) that have a highoxidation potential and can kill microorganisms present in water (fecal coliforms and total coliforms). Thefrequency of the plasma system was set to 3.0, 3.3 and 3.7 MHz and applied to river water for 60 minutes. Theresults show that in all runs, the pH of the water produced was in the range from 7.4 to 7.9. The removalefficiencies of fecal coliforms achieved were between 83.75 and 95% and were higher than the removalefficiencies of total coliforms, which were between 82.61 and 93.48%. Meanwhile, the death rate (kD) of fecalcoliforms wasfaster than that of total coliforms. Therefore, the removal of total coliforms is the key to removingmicroorganisms fromwater. RF plasma treatment can be used for treatment of drinking water to decreasemicroorganisms.

Room-temperature crystallization of amorphous thin films by RF plasma treatment

2004 ◽  
Author(s):  
Hisashi Ohsaki ◽  
Y. Shibayama ◽  
A. Kinbara ◽  
T. Watanabe ◽  
K. Fukuhisa ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Room Temperature ◽  
Rf Plasma ◽  
Amorphous Thin Films ◽  
Temperature Crystallization

Anatase TiO2Films Crystallized by RF Plasma Treatment

2011 ◽  
Vol 18 (17) ◽  
pp. 172004 ◽  
Author(s):  
H Ohsaki ◽  
R Andou ◽  
A Kinbara ◽  
T Watanabe
Keyword(s):  
Plasma Treatment ◽  
Rf Plasma

26.4: Enhancement of Discharge Characteristics Using RF-Plasma Treatment on MgO Layer in 50-In. Full-HD AC-PDPs

2009 ◽  
Vol 40 (1) ◽  
pp. 363 ◽  
Author(s):  
Choon-Sang Park ◽  
Heung-Sik Tae ◽  
Bong-Kyoung Park ◽  
Eun-Young Jung ◽  
Jeong-Chull Ahn
Keyword(s):  
Plasma Treatment ◽  
Rf Plasma ◽  
Discharge Characteristics
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