Hierarchy of simulation approaches for hot carrier transport in deep submicron devices

1998 ◽  
Vol 13 (1) ◽  
pp. 1-10 ◽  
Author(s):  
Umberto Ravaioli
1996 ◽  
Vol 428 ◽  
Author(s):  
Abhijit Phanse ◽  
Samar Saha

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.


1992 ◽  
Vol 45 (4) ◽  
pp. 1903-1906 ◽  
Author(s):  
Tilmann Kuhn ◽  
Lino Reggiani ◽  
Luca Varani

1996 ◽  
Vol 74 (S1) ◽  
pp. 9-15 ◽  
Author(s):  
P. V. Kolev ◽  
M. J. Deen ◽  
H. C. Liu ◽  
Jianmeng Li ◽  
M. Buchanan ◽  
...  

Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.


1991 ◽  
pp. 173-241
Author(s):  
David K. Ferry ◽  
Robert O. Grondin

1996 ◽  
pp. 449-452 ◽  
Author(s):  
G. Brunthaler ◽  
G. Bauer ◽  
G. Braithwaite ◽  
N. L. Mattey ◽  
P. Phillips ◽  
...  

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 381-386 ◽  
Author(s):  
M. Trovato ◽  
L. Reggiani

By extending the maximum entropy principle within a scheme in total average energy we obtain a closed system of hydrodynamic equations for a full nonparabolic band model in which all the unknown constitutive functions are completely determined. The theory is validated by comparing hydrodynamic calculations with Monte Carlo simulations performed for bulk and submicron Si structures at 300 K. In the general framework of the moment theory a systematic study of small-signal response functions is provided.


2020 ◽  
Vol 8 (47) ◽  
pp. 25402-25410
Author(s):  
Dabin Lin ◽  
Lin Ma ◽  
Wenjun Ni ◽  
Cheng Wang ◽  
Fangteng Zhang ◽  
...  

Ultrafast sub-ps hot carrier relaxation followed by subsequent ps carrier transport from layered 2D to 3D-like perovskite phases is demonstrated.


1992 ◽  
Vol 06 (07) ◽  
pp. 805-936 ◽  
Author(s):  
X.L. Lei ◽  
N.J.M. Horing

The balance-equation approach to nonlinear hot-carrier transport theory, formulated by Lei and Ting (1984), is addressed in this comprehensive review. A central feature is the role of strong electron-electron interactions in promoting rapid thermalization about the drifted transport state and the concomitant substantial simplification of the transport theory. This physical feature is embodied in the initial density matrix chosen to represent the unperturbed carrier system. Force and energy balance equations are formulated for the dc steady state, ac dynamic and transient cases of charge conduction, including memory effects. The scattering mechanisms include impurity and phonon interactions along with dynamic nonlocal screening effects due to carrier-carrier interactions. Both linear and nonlinear resistivities are discussed in the degenerate and nondegenerate statistical regimes. Interesting phenomena such as electron cooling and thermal noise and diffusion are discussed as well. Semiconductor microstructure transport is described for both linear and nonlinear hot carrier conduction. In this connection, quasi-2D-systems, heterojunctions, and quantum well superlattices are treated with attention to steady state, transient and high frequency transport, including, for example, superlattice plasmon resonance structure. Type-II superlattice transport is reviewed as well as type-I, and electron-hole drag is treated in conjunction with negative minority electron mobility in a quantum well. Multivalley semiconductors are discussed in some detail. Furthermore, attention is also focused on the center-of-mass velocity fluctuation, Langevin-type equation and thermal noise and diffusion for microstructures and multivalley systems. A number of particularly important phenomena are examined from the balance-equation point of view, such as nonequilibrium phonons, higher order scattering effects and weak localization, hydrodynamic equations for weakly nonuniform systems, and the intracollisional field effect. Alternative formulations and interpretations of the balance-equation approach are reviewed. The distinction between this many-particle, isothermal, balance-equation theory and the noninteracting (single-particle) adiabatic transport theory is discussed to clarify issues subject to controversy in the literature. Finally, we give a brief review of recent developments in the balance-equation approach: investigation of the distribution function in balance-equation theory, improved calculations for GaAs/AlGaAs heterojunctions, extension of the balance equations to an abitrary energy band and recent work on superlattice miniband transport.


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