A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs

Front and back gate interface-trap generation due to hot carrier stress in fully depleted SOI/MOSFETs

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526457 ◽

2002 ◽

Author(s):

Yujun Li ◽

T.P. Ma

Keyword(s):

Interface Trap ◽

Back Gate ◽

Fully Depleted ◽

Hot Carrier ◽

Identification of Channel Hot Carrier Stress-Induced Oxide Traps Leading to Random Telegraph Signals in pMOSFETs

10.1109/ted.2020.3044016 ◽

2020 ◽

pp. 1-7

Author(s):

Tanvir Ahmed ◽

Zeynep Celik-Butler ◽

Fan-Chi Hou ◽

Shaoping Tang ◽

Guru Mathur

Keyword(s):

Hot Carrier ◽

Random Telegraph Signals ◽

Hot Carrier Stress ◽

Oxide Traps

HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19884163 ◽

1988 ◽

Vol 49 (C4) ◽

pp. C4-779-C4-782 ◽

Cited By ~ 1

Author(s):

C. BERGONZONI ◽

R. BENECCHI ◽

P. CAPRARA

Keyword(s):

Hot Carrier ◽

Hot Carrier Stress ◽

Induced Changes

Stochastic and Deterministic Modeling Frameworks for Time Kinetics of Gate Insulator Traps During and After Hot Carrier Stress in MOSFETs

2021 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps46558.2021.9405155 ◽

2021 ◽

Author(s):

Satyam Kumar ◽

Tarun Samadder ◽

Karansingh Thakor ◽

Uma Sharma ◽

Souvik Mahapatra

Keyword(s):

Gate Insulator ◽

Hot Carrier ◽

Deterministic Modeling ◽

Hot Carrier Stress ◽

Kinetics Of

Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2017.05.021 ◽

2017 ◽

Vol 74 ◽

pp. 74-80 ◽

Cited By ~ 6

Author(s):

Lihua Dai ◽

Xiaonian Liu ◽

Mengying Zhang ◽

Leqing Zhang ◽

Zhiyuan Hu ◽

...

Keyword(s):

Short Channel ◽

Hot Carrier ◽

Hot-carrier stress damage in the gate 'off' state in n-channel transistors

10.1109/16.141249 ◽

1992 ◽

Vol 39 (7) ◽

pp. 1774-1776 ◽

Cited By ~ 10

Author(s):

B.S. Doyle ◽

K.R. Mistry

Keyword(s):

Hot Carrier ◽

Hot Carrier Stress ◽

Stress Damage

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

Hot Carrier Stress Investigation of Zinc Oxide Thin Film Transistors with an Al2O3 Gate Dielectric

10.1109/ipfa.2018.8452171 ◽

2018 ◽

Cited By ~ 3

Author(s):

Rodolfo A. Rodriguez-Davila ◽

Israel Mejia ◽

Manuel Quevedo-Lopez ◽

Chadwin D. Young

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Hot Carrier ◽

Hot Carrier Stress ◽

Al2o3 Gate Dielectric

Hot Carrier Stress Effects of SiO2 Passivated AlGaN/GaN High Electron Mobility Transistors

ECS Transactions ◽

10.1149/1.2357210 ◽

2019 ◽

Vol 3 (5) ◽

pp. 213-220 ◽

Cited By ~ 1

Author(s):

Min-Woo Ha ◽

Young-Hwan Choi ◽

Joon-Hyun Park ◽

Kwang-Seok Seo ◽

Min-Koo Han

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Hot Carrier ◽

Stress Effects ◽

Electron Mobility Transistors ◽

Detection of the trapped electron distribution of PMOSFET's after hot-carrier stress

10.1109/16.210205 ◽

1993 ◽

Vol 40 (5) ◽

pp. 958-965 ◽

Cited By ~ 10

Author(s):

J.-H. Song ◽

Y.-J. Park ◽

H.-S. Min

Keyword(s):

Electron Distribution ◽

Hot Carrier ◽

Hot Carrier Stress ◽

Trapped Electron

Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part I: Experimental

10.1109/ted.2018.2873419 ◽

2019 ◽

Vol 66 (1) ◽

pp. 232-240 ◽

Cited By ~ 9

Author(s):

Bianka Ullmann ◽

Markus Jech ◽

Katja Puschkarsky ◽

Gunnar Andreas Rott ◽

Michael Waltl ◽

...

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Hot Carrier ◽

Bias Temperature Instability ◽