An HREM, TEM and SAD study of three-dimensional growth and strain relaxation in (GemSin) superlattices

1993 ◽  
Vol 5 (13) ◽  
pp. L161-L164
Author(s):  
S D Yu ◽  
L C Wang ◽  
Q Li ◽  
D Feng ◽  
Y M Chu ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Three Dimensional ◽  
Dimensional Growth

scholarly journals Plastic strain relaxation and alloy instability in epitaxial corundum-phase (Al,Ga)2O3 thin films on r-plane Al2O3

2021 ◽  
Author(s):  
Marius Grundmann ◽  
Tillmann Stralka ◽  
Michael Lorenz ◽  
Susanne Selle ◽  
Christian Patzig ◽  
...  
Keyword(s):  
Thin Films ◽  
Plastic Strain ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Growth Mode ◽  
Step Flow ◽  
Dimensional Growth

The growth of (AlxGa1-x)2O3 alloy thin films in corundum phase on r-plane (01.2) Al2O3 substrates is investigated. The growth mode changes from step flow for pseudomorphic layers to three-dimensional growth...

Hormonal modulation of ishikawa cells during three-dimensional growth in vitro☆

1998 ◽  
Vol 5 (4) ◽  
pp. 217-223 ◽  
Author(s):  
D PINELLI ◽  
J DRAKE ◽  
M WILLIAMS ◽  
D CAVANAGH ◽  
J BECKER
Keyword(s):  
Three Dimensional ◽  
Ishikawa Cells ◽  
Hormonal Modulation ◽  
Dimensional Growth

Study on the Surface Quality of Al2O3 Nano-Films by Ion Beam Sputtering Deposition

2011 ◽  
Vol 148-149 ◽  
pp. 54-57
Author(s):  
Xiao Ping Lin ◽  
Yun Dong ◽  
Lian Wei Yang
Keyword(s):  
Surface Quality ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Dimensional Growth ◽  
Different Thickness

The Al2O3 nano-films of different thicknesses (1~100nm) were successfully deposited on the monocrystalline Si surface by using ion beam sputtering deposition. The surface topography and the component of nano-films with different thickness were analyzed. The quality of the surface of nano-films was systematically studied. When the films’ thickness increase, the studies by atomic force microscope (AFM), X-ray photoelectron spectrum（XPS） show that the gathering grain continually grows up and transits from acerose cellula by two-dimensional growth to globularity by three-dimensional growth. The elements O, Al and Si were found on the surface of Al2O3 nano-films. With the thickness of the films increasing, the content of Al gradually increases and the intensity peak of Si wears off, the surface quality of the deposited films is ceaselessly improved

The effect of aliphatic chain length on thermal properties of poly(alkylene dicarboxylate)s

e-Polymers ◽  
2007 ◽  
Vol 7 (1) ◽  
Author(s):  
Corrado Berti ◽  
Annamaria Celli ◽  
Paola Marchese ◽  
Elisabetta Marianucci ◽  
Giancarlo Barbiroli ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Three Dimensional ◽  
The Other ◽  
Aliphatic Chain ◽  
Melting Temperatures ◽  
Avrami Analysis ◽  
Isothermal Analysis ◽  
Dimensional Growth ◽  
Crystallizing Polymers ◽  
Crystalline Forms

AbstractSome poly(alkylene dicarboxylate)s, derived from ethanediol or 1,4- butanediol and different diacids, have been synthesized and analyzed by DSC to determine the correlations existing between the thermal properties and the length of the aliphatic chain. The polymers show crystallization and melting temperatures and enthalpies which increase as the polymethylene segments lengthen, due to the formation of more stable crystals. The samples derived from ethanediol are peculiar; they show reorganization processes during the melting and the melting temperatures are notably higher with respect to those of the other polyesters. This behavior is discussed. Isothermal analysis highlights that poly(alkylene dicarboxylate)s are fast crystallizing polymers. The Avrami analysis suggests a crystallization mechanism characterized by heterogeneous nucleation and three dimensional growth; secondary crystallizations is present only in the samples characterized by short -(CH2)- sequences, due to the reorganization of less perfect crystalline forms. A comparative study between the crystallization rates as a function of the undercooling is reported.

Three-dimensional growth morphologies in diffusion-controlled channel growth

1997 ◽  
Vol 55 (6) ◽  
pp. 7789-7792 ◽  
Author(s):  
T. Abel ◽  
E. Brener ◽  
H. Müller-Krumbhaar
Keyword(s):  
Three Dimensional ◽  
Diffusion Controlled ◽  
Dimensional Growth

Electrophoretic Deposition of Metal Nanoparticle Monolayers from Nonpolar Solvents for Hydrogen Sensing

2015 ◽  
Vol 654 ◽  
pp. 213-217 ◽  
Author(s):  
Jan Grym ◽  
Roman Yatskiv ◽  
Ondřej Černohorský ◽  
María Verde ◽  
Jan Lorinčík ◽  
...  
Keyword(s):  
Electrophoretic Deposition ◽  
Reverse Micelles ◽  
Three Dimensional ◽  
Fast Response ◽  
Metal Nanoparticle ◽  
Hydrogen Sensors ◽  
Hydrogen Sensing ◽  
Nonpolar Solvents ◽  
Dimensional Growth ◽  
High Degree

We report on the electrophoretic deposition (EPD) of metal nanoparticles (NPs) prepared in reverse micelles on semiconductor substrates with the aim to fabricate sensitive Schottky-based hydrogen sensors with fast response and high degree of selectivity. We discuss the mechanism of NP monolayer formation and show which parameters are essential for the transition from three-dimensional to two-dimensional growth.

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Remote Plasma ◽  
Dimensional Growth ◽  
Diffraction Patterns

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.

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