Influence of the Conformational Parameters on Physical Properties of Some Polyamides Containing Phenylquinoxaline Rings

1997 ◽  
Vol 9 (2) ◽  
pp. 177-188 ◽  
Author(s):  
C Hamciuc ◽  
E Hamciuc ◽  
I A Ronova ◽  
M Bruma

Conformational parameters of some heterocyclic polyamides containing phenyl-substituted quinoxaline rings have been calculated by the Monte Carlo method taking into consideration the hindered rotation produced by the side phenyl groups. Several physical properties such as solubility, glass transition temperature, initial decomposition temperature and dielectric constant have been studied with regard to the rigidity of the chains of these polymers, and their relationships have been shown.

1995 ◽  
Vol 7 (4) ◽  
pp. 411-420 ◽  
Author(s):  
M Bruma ◽  
I Sava ◽  
F Mercer ◽  
I Negulescu ◽  
W Daly ◽  
...  

A series of new, fluorinated poly(ester-imides)s has been synthesized by solution condensation, in a high-boiling-point solvent, of dihydroxy compounds containing imide and hexafluoroisopropylidene units with diacid chlorides containing preformed ester groups. Solutions of these polymers in NMP or in a mixture of trifluoroacetic acid with chloroform were cast into colourless, thin, flexible films having a low dielectric constant. These polymers show high thermal stability, with the initial decomposition temperature being over 400cC. The glass transition temperature is in the range 215-272C for fully aromatic structures and is about 170 TC for those polymers containing some ethylene groups along with aromatic ones. All these characteristics are discussed and compared with those of related poly(esterimide)s which do not contain 6F groups.


1997 ◽  
Vol 476 ◽  
Author(s):  
P. H. Townsend ◽  
S. J. Martin ◽  
J. Godschalx ◽  
D. R. Romer ◽  
D. W. Smith ◽  
...  

AbstractA novel polymer has been developed for use as a thin film dielectric in the interconnect structure of high density integrated circuits. The coating is applied to the substrate as an oligomeric solution, SiLK*, using conventional spin coating equipment and produces highly uniform films after curing at 400 °C to 450 °C. The oligomeric solution, with a viscosity of ca. 30 cPs, is readily handled on standard thin film coating equipment. Polymerization does not require a catalyst. There is no water evolved during the polymerization. The resulting polymer network is an aromatic hydrocarbon with an isotropie structure and contains no fluorine.The properties of the cured films are designed to permit integration with current ILD processes. In particular, the rate of weight-loss during isothermal exposures at 450 °C is ca. 0.7 wt.%/hour. The dielectric constant of cured SiLK has been measured at 2.65. The refractive index in both the in-plane and out-of-plane directions is 1.63. The flow characteristics of SiLK lead to broad topographic planarization and permit the filling of gaps at least as narrow as 0.1 μm. The glass transition temperature for the fully cured film is greater than 490 °C. The coefficient of thermal expansivity is 66 ppm/°C below the glass transition temperature. The stress in fully cured films on Si wafers is ca. 60 MPa at room temperature. The fracture toughness measured on thin films is 0.62 MPa m ½. Thin coatings absorb less than 0.25 wt.% water when exposed to 80% relative humidity at room temperature.


2014 ◽  
Vol 1025-1026 ◽  
pp. 697-702
Author(s):  
Darika Jaaoh ◽  
Chatchai Putson ◽  
Nantakan Muensit

In this work, we present a series of electrostrictive polymer blend that can potentially be used as actuators for a variety of applications. This polymer blend combines an electrostrictive polyurethane with a conductivity polyaniline polymer. The effect of filler content has been investigated. The structures of the blends, the electrical and mechanical properties which affect electrostrictive behavior were studied. The results showed that both dielectric constant and glass transition temperature of the blends increase with increasing polyaniline contents. Moreover, it was noted that space charges distribution and hard-segment domain formation significantly related with electrostrictive coefficient of polymer blend. Therefore, electrostriction behavior in the polymer blends has been demonstrated, and optimal microstructure for electrostriction enhancement has been identified.


2016 ◽  
Vol 29 (2) ◽  
pp. 141-150 ◽  
Author(s):  
K Ilango ◽  
P Prabunathan ◽  
E Satheeshkumar ◽  
P Manohar

In this present work, porous mullites (PM0–5) were synthesized through a template-assisted method using various weight percentages of pluronic (P-123). PM5 obtained using 10 wt% of P-123 was found to show maximum porosity (3.8 Å) and low dielectric constant value (2.4). PM5 was functionalized using glycidyl-terminated silane and denoted as FPM and various weight percentages of FPM were reinforced with polybenzoxazine (PBZ) matrix in order to develop FPM/PBZ nanocomposites. The thermal studies indicate that 1.5 wt% of FPM/PBZ nanocomposite showed improved thermal stability with 34% char yield at 800°C and 162°C as glass transition temperature. It also exhibits low dielectric constant (2.6) than that of the neat PBZ matrix and other FPM/PBZ nanocomposites. The microscopic analysis confirms the homogenous dispersion of FPM into the PBZ polymer that has a porous morphology. The results suggest that the as-synthesized mesoporous mullite with low dielectric constant ( k), synthesized via template-assisted method can be used as a reinforcement to decrease the dielectric constant of polymeric material, which is of industrial significance.


1997 ◽  
Vol 476 ◽  
Author(s):  
N. R. Grove ◽  
P. A. Kohl ◽  
S. A. Bidstrup-Allen ◽  
R. A. Shick ◽  
B. L. Goodall ◽  
...  

AbstractWithin the microelectronics industry, there is an ongoing trend toward miniaturization coupled with higher performance. The scaling of transitors toward smaller dimensions, higher speeds, and lower power has resulted in an urgent need for low dielectric constant interlevel insulators. Low dielectric constant interlevel dielectrics have already been identified as being critical to the realization of high performance integrated circuits in the SLA Roadmap. Thus, there exists a need in the microelectronics industry for a thermally stable, noncorrosive low dielectric constant polymer with good solvent resistance, high glass transition temperature, good mechanical performance and good adhesive properties, particularly to copper. In addition, the desired dielectric material should be capable of being processed in environmentally friendly solvents, and the final thermal and electrical performance should not be affected by manufacturing or post environmental conditions. High glass transition temperature polynorbornenes are being developed which provide many of these desired features. This polymer family is produced via a new transition metal catalyzed polymerization. Attributes which make polynorbornene particularly attractive in microelectronics include: (i) excellent thermal performance, (ii) adhesion to conductors without the use of adhesion promoters or barrier layers, (iii) very low moisture absorption (< 0.1 wt %), and (iv) low dielectric constant (2.2 – 2.6). Side groups which have been added to the polynorbornene backbone improve adhesion, dielectric properties and mechanical properties.


1991 ◽  
Vol 227 ◽  
Author(s):  
J-PH Ansermet ◽  
A. Kramer

ABSTRACTThe bismaleimide resin Matrimid 5292A (I) was cocured with an allylnadic-imide resin (EP 433) which contained a long aliphatic chain as backbone (II). Water uptake, swelling, and the dielectric properties (up to 300 MHz) were studied in cast plates. The dielectric constant varied from 5.4 in (I) to 3.2 in (II) at water saturation, compared to 3.1 in (I) to 2.7 in (II) in the dry state. The glass transition temperature stayed above 200 °C at less than 80 mol% of (II).


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