Unsaturated linear magnetoresistance effect in high-quality free-standing InSb single-crystal nanosheets

A classical elpasolite-type structure is considered with respect to dynamically disordered ammonium fluoro-(oxofluoro-)metallates. Single-crystal X-ray diffraction data from high quality (NH4)3HfF7 and (NH4)3Ti(O2)F5 samples enabled the refinement of the ligand and cationic positions in the cubic Fm \bar 3 m (Z = 4) structure. Electron-density atomic profiles show that the ligand atoms are distributed in a mixed (split) position instead of 24e. One of the ammonium groups is disordered near 8c so that its central atom (N1) forms a tetrahedron with vertexes in 32f. However, a center of another group (N2) remains in the 4b site, whereas its H atoms (H2) occupy the 96k positions instead of 24e and, together with the H3 atom in the 32f position, they form eight spatial orientations of the ammonium group. It is a common feature of all ammonium fluoroelpasolites with orientational disorder of structural units of a dynamic nature.

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High-quality Fe(001) single crystal films on MgO(001) substrates for electron spectroscopies

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581340 ◽

1998 ◽

Vol 16 (4) ◽

pp. 2277-2280 ◽

Cited By ~ 48

Author(s):

R. Bertacco ◽

S. De Rossi ◽

F. Ciccacci

Keyword(s):

Single Crystal ◽

High Quality ◽

Single Crystal Films ◽

Crystal Films

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Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.299 ◽

2006 ◽

Vol 527-529 ◽

pp. 299-302

Author(s):

Hideki Shimizu ◽

Yosuke Aoyama

Keyword(s):

Substrate Temperature ◽

Single Crystal ◽

Epitaxial Growth ◽

Deposition Rate ◽

Crystalline Structure ◽

Flow Rate ◽

Silicon Substrates ◽

High Quality ◽

Sic Films ◽

Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

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Growth of high quality single‐domain single‐crystal films of PbTiO3

Applied Physics Letters ◽

10.1063/1.112112 ◽

1994 ◽

Vol 65 (9) ◽

pp. 1106-1108 ◽

Cited By ~ 43

Author(s):

Z. Li ◽

C. M. Foster ◽

D. Guo ◽

H. Zhang ◽

G. R. Bai ◽

...

Keyword(s):

Single Crystal ◽

Single Domain ◽

High Quality ◽

Single Crystal Films ◽

Crystal Films

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Fabrication of free‐standing single‐crystal silicon wires

Applied Physics Letters ◽

10.1063/1.99299 ◽

1988 ◽

Vol 52 (10) ◽

pp. 834-835 ◽

Cited By ~ 11

Author(s):

A. Potts ◽

D. G. Hasko ◽

J. R. A. Cleaver ◽

H. Ahmed

Keyword(s):

Single Crystal ◽

Single Crystal Silicon ◽

Free Standing ◽

Crystal Silicon

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Ultralong free-standing single crystal perovskite microwires with extremely low dark current

10.21203/rs.3.rs-629456/v1 ◽

2021 ◽

Author(s):

Xiangshun Geng ◽

Qi-Xin Feng ◽

He Tian ◽

Weijian Chen ◽

Xiaoming Wen ◽

...

Keyword(s):

Single Crystal ◽

Dark Current ◽

Near Infrared ◽

Carrier Lifetime ◽

Low Loss ◽

Free Standing ◽

Monoclinic Crystal ◽

Monoclinic Crystal Structure ◽

Integrated Optical ◽

Integrated Optical Waveguide

Abstract Super long perovskite microwires (PMWs) are in a great demand in many fields such as low-loss microcables and integrated optical waveguide. Despite decades of research into PMWs, single crystal PMWs with several centimeters long have not been obtained. Here, ultralong (up to 7.6 centimeters) monoclinic crystal structure CH3NH3PbI3·DMF PMWs have been synthesized. The high-quality microwire exhibits long carrier lifetime of 1775.7 ns. The as-prepared free-standing PMWs can be integrated to any arbitrary substrate and 808 nm near-infrared photodetectors have been successfully demonstrated. The fabricated device shows a high light on/off ratio of 1.79×106 and an extremely low dark current of 2.5 fA at 1 V bias. This work provides a strategy for the solution growth of ultralong microwires.

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Redetermination of Sr2PdO3 from single-crystal X-ray data

Acta Crystallographica Section E Crystallographic Communications ◽

10.1107/s2056989018017176 ◽

2019 ◽

Vol 75 (1) ◽

pp. 30-32

Author(s):

Gohil S. Thakur ◽

Hans Reuter ◽

Claudia Felser ◽

Martin Jansen

Keyword(s):

Crystal Structure ◽

Single Crystal ◽

Diffraction Data ◽

Structure Refinement ◽

Structure Type ◽

X Ray Diffraction ◽

High Quality ◽

X Ray ◽

Cell Parameters ◽

Anisotropic Displacement Parameters

The crystal structure redetermination of Sr2PdO3 (distrontium palladium trioxide) was carried out using high-quality single-crystal X-ray data. The Sr2PdO3 structure has been described previously in at least three reports [Wasel-Nielen & Hoppe (1970). Z. Anorg. Allg. Chem. 375, 209–213; Muller & Roy (1971). Adv. Chem. Ser. 98, 28–38; Nagata et al. (2002). J. Alloys Compd. 346, 50–56], all based on powder X-ray diffraction data. The current structure refinement of Sr2PdO3, as compared to previous powder data refinements, leads to more precise cell parameters and fractional coordinates, together with anisotropic displacement parameters for all sites. The compound is confirmed to have the orthorhombic Sr2CuO3 structure type (space group Immm) as reported previously. The structure consists of infinite chains of corner-sharing PdO4 plaquettes interspersed by SrII atoms. A brief comparison of Sr2PdO3 with the related K2NiF4 structure type is given.

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