Tailoring atomic 1T phase CrTe2 for in situ fabrication

2021 ◽  
Author(s):  
Chaolun Wang ◽  
Qiran Zou ◽  
Zhiheng Cheng ◽  
Jietao Chen ◽  
Chen Luo ◽  
...  

Abstract Controllable tailoring and understanding the phase-structure relationship of the 1T phase two-dimensional (2D) materials are critical for their applications in nanodevices. The in situ transmission electron microscope (TEM) could regulate and monitor the evolution process of the nanostructure of 2D material with atomic resolution. In this work, a controllably tailoring 1T-CrTe2 nanopore is carried out by the in situ TEM. A preferred formation of the 1T-CrTe2 border structure and nanopore healing process are studied at the atomic scale. The controllable tailoring of the 1T phase nanopore could be achieved by regulating the transformation of two types of low indices of crystal faces {10-10} and {11-20} at the nanopore border. Machine learning is applied to automatically process the TEM images with high efficiency. By adopting the deep-learning-based image-segmentation method and augmenting the TEM images specifically, the nanopore of the TEM image could be automatically identified and the evaluation result of DICE metric reaches 93.17% on test set. This work presents the unique structure evolution of 1T phase 2D material and the computer aided high efficiency TEM data analysis based on deep learning. The techniques applied in this work could be generalized to other materials for controlled nanostructure regulation and automatic TEM image analyzation.

2000 ◽  
Vol 72 (1-2) ◽  
pp. 209-219 ◽  
Author(s):  
Z. L. Wang ◽  
P. Poncharal ◽  
W. A. de Heer

Property characterization of nanomaterials is challenged by the small size of the structure because of the difficulties in manipulation. Here we demonstrate a novel approach that allows a direct measurement of the mechanical and electrical properties of individual nanotube-like structures by in situ transmission electron microscopy (TEM). The technique is powerful in a way that it can be directly correlated to the atomic-scale microstructure of the carbon nanotube with its physical properties, thus providing a complete characterization of the nanotube. Applications of the technique will be demonstrated in measurements of the mechanical properties, the electron field emission, and the ballistic quantum conductance of individual carbon nanotubes. A nanobalance technique is demonstrated that can be applied to measure the mass of a single tiny particle as light as 22 fg (1 f = 10-15 ).


2013 ◽  
Vol 1525 ◽  
Author(s):  
Xuedong Bai ◽  
Zhi Xu ◽  
Peng Gao ◽  
Kaihui Liu ◽  
Wenlong Wang ◽  
...  

ABSTRACTIn-situ transmission electron microscopy (TEM) method is powerful in a way that it can directly correlate the atomic-scale structure with physical and chemical properties. We will report on the construction and applications of the homemade in-situ TEM electrical and optical holders. Electrical transport of carbon nanotubes and photoconducting response on bending of individual ZnO nanowires have been studied inside TEM. Oxygen vacancy electromigration and its induced resistance switching effect have been probed in CeO2 films.


1999 ◽  
Vol 589 ◽  
Author(s):  
Z.L. Wang ◽  
P. Poncharal ◽  
W.A. De Heer ◽  
R.P. Gao

AbstractProperty characterization of nanomaterials is challenged by the small size of the structure because of the difficulties in manipulation. Here we demonstrate a novel approach that allows a direct measurement of the mechancial and electrical properties of individual nanotube-like structures by in-situ transmission electron microscopy (TEM). The technique is powerful in a way that it can directly correlate the atomic-scale microstructure of the carbon nanotube with its physical properties, providing an one-to-one correspondence in structure-property characterization. Applications of the technique will be demonstrated on mechanical properties, the electron field emission and the ballistic quantum conductance in individual nanotubes. A nanobalance technique is demonstrated that can be applied to measure the mass of a single tiny particle as light as 22 fg (1 f= 10−15).


1991 ◽  
Vol 238 ◽  
Author(s):  
F. D. Tichelaar ◽  
F. W. Schapink

ABSTRACTIn this paper the structure of a (011)-Σ=3 twist boundary in ordered Cu3Au is analysed geometrically. Wrong nearest-neighbour bonds can be avoided by facetting on an atomic scale along common {112} planes, together with a rigid-body translation parallel to one of the facets as measured in earlier work. In the specimen different translational states were found in different areas of the [165]-Σ=3 boundary by transmission electron microscopy (TEM). One of the translations was in agreement with the model, the other was associated with a presumably energetically more unfavourable structure. The in situ observation at 230 °C of the motion of the dislocation separating the different boundary areas was associated with a transformation of the boundary structure with the higher energy into the more favourable structure. Therefore, it is likely that the driving force of the dislocation motion was a difference in boundary energy.


Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.


Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.


Author(s):  
S. Hagège ◽  
U. Dahmen ◽  
E. Johnson ◽  
A. Johansen ◽  
V.S. Tuboltsev

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.


Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).


Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 163
Author(s):  
Iryna Zelenina ◽  
Igor Veremchuk ◽  
Yuri Grin ◽  
Paul Simon

Nano-scaled thermoelectric materials attract significant interest due to their improved physical properties as compared to bulk materials. Well-shaped nanoparticles such as nano-bars and nano-cubes were observed in the known thermoelectric material PbTe. Their extended two-dimensional nano-layer arrangements form directly in situ through electron-beam treatment in the transmission electron microscope. The experiments show the atomistic depletion mechanism of the initial crystal and the recrystallization of PbTe nanoparticles out of the microparticles due to the local atomic-scale transport via the gas phase beyond a threshold current density of the beam.


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