Analytical modeling of quantization effects in surrounding-gate MOSFETs

2013 ◽  
Vol 33 (1/2) ◽  
pp. 630-644 ◽  
Author(s):  
Vimala Palanichamy ◽  
N.B. Balamurugan
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
Quantum Effects ◽  
Physical Models ◽  
Threshold Region ◽  
Content Type ◽  
Surrounding Gate ◽  
Inversion Charge ◽  
The Impact ◽  
Device Operation

Purpose – The purpose of this paper is to present an analytical model and simulation for cylindrical gate all around MOSFTEs including quantum effects. Design/methodology/approach – To incorporating the impact of quantum effects, the authors have used variational method for solving the Poisson and Schrodinger equations. The accuracy of the results obtained using this model is verified by comparing them with simulation results. Findings – This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge centroid, threshold voltage, inversion charge, gate capacitance and drain current. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different dimensions and bias voltages. Practical implications – Simulation based on the compact physical models reduces the cost of developing a sophisticated fabrication technology and shortens the time-to-market. They may also be utilized to explore innovative device structures. Originality/value – This paper presents, for the first time, a compact quantum analytical model for cylindrical surrounding gate MOSFETs which predicts the device characteristics reasonably well over the entire range of device operation (above threshold as well as sub-threshold region).

ANALYTICAL MODELING OF DRAIN CURRENT, CAPACITANCE AND TRANSCONDUCTANCE IN SYMMETRIC DOUBLE-GATE MOSFETs CONSIDERING QUANTUM EFFECTS

2013 ◽  
Vol 12 (01) ◽  
pp. 1350005 ◽  
Author(s):  
VIMALA PALANICHAMY ◽  
N. B. BALAMURUGAN
Keyword(s):  
Numerical Solutions ◽  
Inversion Layer ◽  
Drain Current ◽  
Quantum Effects ◽  
Schrodinger Equations ◽  
Double Gate ◽  
Schrödinger Equations ◽  
Inversion Charge ◽  
Physical Insight ◽  
Quantum Mechanical Effects

An analytical model for double-gate (DG) MOSFETs considering quantum mechanical effects is proposed in this paper. Schrödinger and Poisson's equations are solved simultaneously using a variational approach. Solving the Poisson and Schrödinger equations simultaneously reveals quantum effects (QME) that influence the performance of DG MOSFETs. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion layer centroid, inversion charge, gate capacitance, drain current and transconductance. We systematically evaluate and analyze the parameters of DG MOSFETs considering QME. The analytical solutions are simple, accurate and provide good physical insight into the quantization caused by quantum confinement under various gate biases. The analytical results of this model are verified by comparing the data obtained with one-dimensional self-consistent numerical solutions of Poisson and Schrödinger equations known as SCHRED.

Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects

2008 ◽  
Vol 55 (1) ◽  
pp. 411-416 ◽  
Author(s):  
J. B. Roldan ◽  
AndrÉs Godoy ◽  
Francisco Gamiz ◽  
M. Balaguer
Keyword(s):  
Quantum Effects ◽  
Surrounding Gate ◽  
Inversion Charge

scholarly journals Study of Analog/Rf and Stability Investigation of Surrounded Gate Junctionless Graded Channel MOSFET(SJLGC MOSFET)

2021 ◽  
Author(s):  
Sarita Misra ◽  
Sudhansu Mohan Biswal ◽  
Biswajit Baral ◽  
Sanjit Kumar Swain ◽  
Sudhansu Kumar Pati
Keyword(s):  
Drain Current ◽  
Rf Circuits ◽  
Superior Performance ◽  
Threshold Region ◽  
Lateral Direction ◽  
Subthreshold Region ◽  
Digital Switching ◽  
Rf Performance ◽  
The Impact ◽  
Rf Performances

Abstract This paper explores the potential advantage of surrounded gate junctionless graded channel (SJLGC) MOSFET in the view of its Analog, RF performances using ATLAS TCAD device simulator. The impact of graded channel in the lateral direction on the potential, electric field, and velocity of carriers, energy band along the channel is investigated systematically. The present work mainly emphasises on the superior performance of SJLGC MOSFET by showing higher drain current (ID) , transconductance (gm) ,cut off frequency (fT) , maximum frequency of oscillation (fmax) , critical frequency (fK) .The drain current is improved by 10.03 % in SJLGC MOSFET due to the impact of grading the channel. There is an improvement in fT, fmax, fK by 45%, 29% and 18% respectively in SJLGC MOSFET showing better RF Performance. The dominance of the SJLGC MOSFET over SJL MOSFET is further elucidated by showing 74% improvement in intrinsic voltage gain (gm / gds) indicating its better applications in sub threshold region. But the transconductance generation factor of SJLGC MOSFET is less than SJL MOSFET in the subthreshold region. The intrinsic gate delay (ζD) of SJLGC MOSFET is less in comparison to SJL MOSFET due to the impact of lower gate to gate capacitance (CGG) suggesting better digital switching applications. The simulation results reveal that SJLGC MOSFET can be a competitive contender for the coming generation of RF circuits covering a broad range of operating frequencies in RF spectrum.

Predicting the impact of operational and financial variables on bullwhip effect using threshold regression: Indian context

2020 ◽  
Vol 13 (2) ◽  
pp. 211-227
Author(s):  
Sachin Gupta ◽  
Anurag Saxena
Keyword(s):  
Supply Chain ◽  
Linear Regression Analysis ◽  
Bullwhip Effect ◽  
Mitigation Strategies ◽  
Threshold Region ◽  
Threshold Regression ◽  
Content Type ◽  
Financial Variables ◽  
Novel Approach ◽  
The Impact

Purpose The operational aspects of supply chain, when handled correctly, results in diminishing the impact of the bullwhip effect. The purpose of this study is to analyze the impact of operational and financial variables on the bullwhip effect. Various operational factors that contribute to the bullwhip effect in a supply chain are identified and their impact on variability in production is measured at manufacturer’s end in the supply chain. Design/methodology/approach Ten different sectors of the Indian economy are identified and analyzed on the basis of bullwhip effect. The ratio of change in production with respect to change in demand is taken as a metric to measure the bullwhip effect. Initially, the impact of identified variables on bullwhip effect is analyzed using the linear regression analysis and then to gain more insights, the threshold regression model is applied according to the change in bullwhip ratio. Findings The study identifies four threshold regions in which bullwhip ratio is changing its slope considerably. The operational and financial variables impacting bullwhip effect differently in these four regions provide useful insights about how the variables are impacting the bullwhip effect. Research limitations/implications Past 11 years of observations on identified operational and financial variables are studied for ten different sectors. The operational and financial variables are identified on basis of available literature but may not be exhaustive in nature. Practical implications The present study implies that the emphasis must be given to the magnitude of the bullwhip ratio. Strategies must be adopted that result in mitigation of bullwhip effect. Such mitigation strategies must not only be restricted on the basis of type of product or sector, perhaps they must be on the basis of threshold region of bullwhip ratio. Originality/value The study suggests a novel approach to study the bullwhip effect in supply chain management using the application of threshold regression considering the bullwhip ratio as a threshold variable.

Explicit Quantum Drain Current Model for Symmetric Double Gate MOSFETs

2020 ◽  
Vol 61 ◽  
pp. 88-96
Author(s):  
Palanichamy Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Charge Density ◽  
Current Model ◽  
Mathematical Expression ◽  
Drain Current ◽  
Quantum Effects ◽  
Oxide Thickness ◽  
Oxide Semiconductor ◽  
Quantum Model ◽  
Double Gate ◽  
Inversion Charge

In this article, an analytical model for Double gate Metal Oxide Semiconductor Field Effect Transistor (DG MOSFET) is developed including Quantum effects. The Schrodinger–Poisson’s equation is used to develop the analytical Quantum model using Variational method. A mathematical expression for inversion charge density is obtained and the model was developed with quantum effects by means of oxide capacitance for different channel thickness and gate oxide thickness. Based on inversion charge density model the compact model is developed for transfer characteristics, transconductance and C-V curves of DG MOSFETs. The results of the model are compared to the simulated results. The comparison shows the accuracy of the proposed model.

An Analytical Modeling and Simulation of Surrounding Gate TFET with an Impact of Dual Material Gate and Stacked Oxide for Low Power Applications

2019 ◽  
Vol 57 ◽  
pp. 68-76 ◽  
Author(s):  
V. Dharshan ◽  
N.B. Balamurugan ◽  
T.S. Arun Samuel
Keyword(s):  
Mathematical Expression ◽  
Drain Current ◽  
Gate Stack ◽  
Tunnel Fet ◽  
Novel Structure ◽  
High K ◽  
Surrounding Gate ◽  
High Degree ◽  
The Impact ◽  
Dual Material

In this paper, an analytical model for modified Surrounding Gate Tunnel FET with gate stack engineering and different gate metals has been developed. Further, considering the scaling advantageous of Gate stack engineering and high degree performance of dual material engineering, the both has been integrated into a novel structure known as Surrounding Gate (SG) Tunnel FET with stacked oxide SiO2/high-k and dual material (DM) has been proposed. The two dimensional (2D) potential at the surface and electric field mathematical models for the DMSG TFET are developed by solving 2D Poisson's equation with matching device boundary conditions. Based on the Kane's formula, mathematical expression for the band-to-band (BTB) tunneling generation rate is derived and then used to calculate the drain current. The impact on the proposed device performance due to the variation of different device parameters has also been studied. It has been found from the presented results that the ON current of the DMSG TFET with stack is 10-6A, OFF current is 10-13A and ON/OFF ratio is 107. The mathematical results have been verified using the simulated results obtained from TCAD, a 3-D device simulator from ATLAS.

Analytical model of drain current of cylindrical surrounding gate p-n-i-n TFET

2015 ◽  
Vol 111 ◽  
pp. 171-179 ◽  
Author(s):  
Wanjie Xu ◽  
Hei Wong ◽  
Hiroshi Iwai
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
Surrounding Gate

The More Control, the Better?

2014 ◽  
Vol 26 (2) ◽  
pp. 81-91 ◽  
Author(s):  
Jeeyun Oh ◽  
Mun-Young Chung ◽  
Sangyong Han
Keyword(s):  
Mixed Design ◽  
Negative Effects ◽  
Story Structure ◽  
Content Type ◽  
High User ◽  
User Control ◽  
Rigorous Research ◽  
Control Versus ◽  
The Media ◽  
The Impact

Despite of the popularity of interactive movie trailers, rigorous research on one of the most apparent features of these interfaces – the level of user control – has been scarce. This study explored the effects of user control on users’ immersion and enjoyment of the movie trailers, moderated by the content type. We conducted a 2 (high user control versus low user control) × 2 (drama film trailer versus documentary film trailer) mixed-design factorial experiment. The results showed that the level of user control over movie trailer interfaces decreased users’ immersion when the trailer had an element of traditional story structure, such as a drama film trailer. Participants in the high user control condition answered that they were less fascinated with, absorbed in, focused on, mentally involved with, and emotionally affected by the movie trailer than participants in the low user control condition only with the drama movie trailer. The negative effects of user control on the level of immersion for the drama trailer translated into users’ enjoyment. The impact of user control over interfaces on immersion and enjoyment varies depending on the nature of the media content, which suggests a possible trade-off between the level of user control and entertainment outcomes.

Peculiarities of tool material wear at polymeric composite blank cutting

2018 ◽  
Vol 2018 (7) ◽  
pp. 27-31
Author(s):  
Юрий Зубарев ◽  
Yuriy Zubarev ◽  
Александр Приемышев ◽  
Alexsandr Priyomyshev
Keyword(s):  
Tool Wear ◽  
Tool Material ◽  
Polymeric Composite ◽  
Physical Models ◽  
Technological Parameters ◽  
Tool Materials ◽  
Materials Used ◽  
The Impact ◽  
Material Wear

Tool materials used for polymeric composite blank machining, kinds of tool material wear arising at machining these blanks, and also the impact of technological parameters upon tool wear are considered. The obtained results allow estimating the potentialities of physical models at polymeric composite blanks cutting.

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