Low-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN

2021 ◽  
Vol 42 (12) ◽  
pp. 122803
Author(s):  
Ting Zhi ◽  
Tao Tao ◽  
Xiaoyan Liu ◽  
Junjun Xue ◽  
Jin Wang ◽  
...  

Abstract Plasmonic nanolaser as a new type of ultra-small laser, has gain wide interests due to its breaking diffraction limit of light and fast carrier dynamics characters. Normally, the main problem that need to be solved for plasmonic nanolaser is high loss induced by optical and ohmic losses, which leads to the low quality factor. In this work, InGaN/GaN nanoplate plasmonic nanolaser with large interface area were designed and fabricated, where the overlap between SPs and excitons can be enhanced. The lasing threshold is calculated to be ~6.36 kW/cm2, where the full width at half maximum (FWHM) drops from 27 to 4 nm. And the fast decay time at 502 nm (sharp peak of stimulated lasing) is estimated to be 0.42 ns. Enhanced lasing characters are mainly attributed to the strong confinement of electromagnetic wave in the low refractive index material, which improve the near field coupling between SPs and excitons. Such plasmonic laser should be useful in data storage applications, biological application, light communication, especially for optoelectronic devices integrated into a system on a chip.

2018 ◽  
Vol 8 (11) ◽  
pp. 2186 ◽  
Author(s):  
Litu Xu ◽  
Fang Li ◽  
Shuai Liu ◽  
Fuqiang Yao ◽  
Yahui Liu

A hybrid plasmonic nanolaser based on nanowire/air slot/semicircular graphene and metal wire structure was designed. In this structure, the waveguides in the nanowires and the graphene-metal interface are coupled to form a hybrid plasma mode, which effectively reduces the metal loss. The mode and strong coupling of the laser are analyzed by using the finite-element method. Its electric field distribution, propagation loss, normalized mode area, quality factor, and lasing threshold are studied with the different geometric model. Simulation results reveal that the performance of the laser using this structure can be optimized by adjusting the model parameters. Under the optimal parameters, the effective propagation loss is only 0.0096, and the lasing threshold can be as low as 0.14 μm−1. This structure can achieve deep sub-wavelength confinement and low-loss transmission, and provides technical support for the miniaturization and integration of nano-devices.


Nanophotonics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 211-224
Author(s):  
Qiang Bai

AbstractWe report a new type of coherent perfect absorption that is determined by the phase coupling between metaatoms and is referred to as the phase-coupled simultaneous coherent perfect absorption (PC-SCPA) for antisymmetric and symmetric incidences and especially the PC-SCPA for antisymmetric and symmetric incidences can be simultaneously achieved in the same bi-layered Schottky junction metamaterial possessing the phase coupling. Our proposed mechanism exploits the phase coupling between metaatoms, which is in contrast with the existing mechanism which depends on the near-field coupling. The theory of PC-SCPA is provided using coupled mode theory with the phase coupling. The operating wavelengths of PC-SCPA are insensitive to the variations of the spacing distances between metaatoms in the lateral and vertical directions. An infrared PC-SCPA-based hot-electron photodetection with dynamically switchable operating wavelengths and dynamically tunable bandwidth is theoretically and numerically verified in the same bi-layered Schottky junction metamaterial. The peak of spectrum of responsivity for antisymmetric and symmetric incidences can be switched to the same wavelength only by altering the phase coupling. Our study may build the bridge among the new type of PC-SCPA, metamaterial, and hot electron and may find potential and significant applications in hot-electron photodetection.


2022 ◽  
Author(s):  
Shadman Shahid ◽  
Shahed -E- Zumrat ◽  
Muhammad Anisuzzaman Talukder

Plasmonic lasers offer great potential for cutting-edge, disruptive applications. However, they suffer from a high loss in metal, lack of spatial coherence in the near-field, and divergent far-field emission. The...


2020 ◽  
Vol 90 (23-24) ◽  
pp. 2769-2781
Author(s):  
Xin rong Li ◽  
LiuBo Wu ◽  
Zhaoning Bu ◽  
Lidong Liu

Pullout theory is very important in improving efficiency, quality, and production costs. Because production efficiency is too low for mechanical drafting equipment, a simple multi-field coupling model of fiber mechanics based on conserving momentum is proposed that considers the distribution of the fiber speed point, slip rate, and friction mechanics. When the roller draft multiple is increased, the position near the rear roller clamp mouth in the draft area will show a sharp decrease of fiber, which is caused by the rapid movement of the front fiber to drive the floating fiber movement, and it is also the existence of the fiber change point. When the roller spacing increases, the draft efficiency decreases, although the pressure applied by the roller to the fibrous strip has a weak effect on the draft efficiency. This research increases our understanding of drawing and provides theoretical support for the design of a new type of drawing.


Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 318
Author(s):  
Yang Li ◽  
Cheng Zhang ◽  
Zhiming Shi ◽  
Jingni Li ◽  
Qingyun Qian ◽  
...  

The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable promise for implementing the target of UHDDS. The as-prepared device presents distinct current ratios of 105.2/103.2/1, low threshold voltages of −1.90 V and −3.85 V, and satisfactory reproducibility beyond 60%, which suggests reliable device performance. This work represents a favorable step toward further development of highly-efficient D−A molecular systems, which opens more opportunities for achieving high performance multilevel memory materials and devices.


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