Study of the initial stage of GaAs growth on FIB-modified silicon substrates

Abstract In this work, we studied the effect of the deposition thickness, growth rate, arsenic flux, and implantation dose on the morphology of the GaAs nanostructures grown on modified Si areas. It is shown that an increase in the growth rate at the initial stages of the growth process leads to the transition of the growth regime from layered-like to one-dimensional with the formation of nanowires. Studies of the effect of As4 pressure have shown that a change in the equivalent As4 flux in the range of 3.7 - 5.0 ML/s does not lead to any significant change in the structure of the GaAs layer in the modified areas. An increase in the implantation dose during processing with a focused ion beam led to disordering of the directions of the grown nanowires due to the degradation of the substrate crystal structure.

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Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

Journal of Micromanufacturing ◽

10.1177/2516598418785507 ◽

2018 ◽

Vol 1 (2) ◽

pp. 115-123 ◽

Cited By ~ 1

Author(s):

Zhongdu He ◽

Zongwei Xu ◽

Mathias Rommel ◽

Boteng Yao ◽

Tao Liu ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Focused Ion Beam ◽

Electron Backscatter Diffraction ◽

Ion Beam ◽

Implantation Dose ◽

Formation Mechanisms ◽

Schematic Model ◽

Dose Threshold ◽

Before And After

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

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An analysis of a quasi-one-dimensional structure fabricated by low-energy focused ion beam

TENCON 2009 - 2009 IEEE Region 10 Conference ◽

10.1109/tencon.2009.5395963 ◽

2009 ◽

Author(s):

Peerasak Chantngarm

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Low Energy ◽

Dimensional Structure ◽

One Dimensional

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Optimization of Pt-C Deposits by Cryo-FIBID: Substantial Growth Rate Increase and Quasi-Metallic Behaviour

Nanomaterials ◽

10.3390/nano10101906 ◽

2020 ◽

Vol 10 (10) ◽

pp. 1906 ◽

Cited By ~ 1

Author(s):

Alba Salvador-Porroche ◽

Soraya Sangiao ◽

Patrick Philipp ◽

Pilar Cea ◽

José María De Teresa

Keyword(s):

Growth Rate ◽

Electrical Resistivity ◽

Room Temperature ◽

Focused Ion Beam ◽

Ion Irradiation ◽

Ion Beam ◽

Electrical Contacts ◽

Condensation Temperature ◽

Monte Carlo Code ◽

Condensed Layer

The Focused Ion Beam Induced Deposition (FIBID) under cryogenic conditions (Cryo-FIBID) technique is based on obtaining a condensed layer of precursor molecules by cooling the substrate below the condensation temperature of the gaseous precursor material. This condensed layer is irradiated with ions according to a desired pattern and, subsequently, the substrate is heated above the precursor condensation temperature, revealing the deposits with the shape of the exposed pattern. In this contribution, the fast growth of Pt-C deposits by Cryo-FIBID is demonstrated. Here, we optimize various parameters of the process in order to obtain deposits with the lowest-possible electrical resistivity. Optimized ~30 nm-thick Pt-C deposits are obtained using ion irradiation area dose of 120 μC/cm2 at 30 kV. This finding represents a substantial increment in the growth rate when it is compared with deposits of the same thickness fabricated by standard FIBID at room temperature (40 times enhancement). The value of the electrical resistivity in optimized deposits (~4 × 104 µΩ cm) is suitable to perform electrical contacts to certain materials. As a proof of concept of the potential applications of this technology, a 100 µm × 100 µm pattern is carried out in only 43 s of ion exposure (area dose of 23 μC/cm2), to be compared with 2.5 h if grown by standard FIBID at room temperature. The ion trajectories and the deposit composition have been simulated using a binary-collision-approximation Monte Carlo code, providing a solid basis for the understanding of the experimental results.

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One‐dimensional GaAs wires fabricated by focused ion beam implantation

Applied Physics Letters ◽

10.1063/1.98574 ◽

1987 ◽

Vol 51 (20) ◽

pp. 1620-1622 ◽

Cited By ~ 48

Author(s):

Toshiro Hiramoto ◽

Kazuhiko Hirakawa ◽

Yasuhiro Iye ◽

Toshiaki Ikoma

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

One Dimensional ◽

Ion Beam Implantation

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Corrosion pitting and environmentally assisted small crack growth

Proceedings of The Royal Society A Mathematical Physical and Engineering Sciences ◽

10.1098/rspa.2014.0254 ◽

2014 ◽

Vol 470 (2169) ◽

pp. 20140254 ◽

Cited By ~ 34

Author(s):

Alan Turnbull

Keyword(s):

Growth Rate ◽

Stress Corrosion ◽

Focused Ion Beam ◽

Imaging Techniques ◽

Ion Beam ◽

Critical Factor ◽

Potential Drop ◽

Quantitative Prediction ◽

Local Dynamic ◽

Element Analysis

In many applications, corrosion pits act as precursors to cracking, but qualitative and quantitative prediction of damage evolution has been hampered by lack of insights into the process by which a crack develops from a pit. An overview is given of recent breakthroughs in characterization and understanding of the pit-to-crack transition using advanced three-dimensional imaging techniques such as X-ray computed tomography and focused ion beam machining with scanning electron microscopy. These techniques provided novel insights with respect to the location of crack development from a pit, supported by finite-element analysis. This inspired a new concept for the role of pitting in stress corrosion cracking based on the growing pit inducing local dynamic plastic strain, a critical factor in the development of stress corrosion cracks. Challenges in quantifying the subsequent growth rate of the emerging small cracks are then outlined with the potential drop technique being the most viable. A comparison is made with the growth rate for short cracks (through-thickness crack in fracture mechanics specimen) and long cracks and an electrochemical crack size effect invoked to rationalize the data.

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Focused ion beam/lift-out transmission electron microscopy cross sections of block copolymer films ordered on silicon substrates

Polymer ◽

10.1016/s0032-3861(00)00503-6 ◽

2001 ◽

Vol 42 (4) ◽

pp. 1613-1619 ◽

Cited By ~ 42

Author(s):

H White ◽

Y Pu ◽

M Rafailovich ◽

J Sokolov ◽

A.H King ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Block Copolymer ◽

Cross Sections ◽

Focused Ion Beam ◽

Ion Beam ◽

Silicon Substrates ◽

Copolymer Films ◽

Transmission Electron ◽

Transmission Electron Microscopy Cross

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The Atomic, Electronic and Defect Structure of the Dynamically Formed Cu2O/Cu Interfaces

MRS Proceedings ◽

10.1557/proc-1026-c17-16 ◽

2007 ◽

Vol 1026 ◽

Author(s):

Xuetian Han ◽

Judith C. Yang

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Island Growth ◽

Cross Sectional ◽

Dual Beam ◽

Transmission Electron ◽

Initial Stage ◽

Cu Film ◽

High Resolution Tem ◽

Electron Energy Loss

AbstractTo gain fundamental insights into metal oxidation, the dynamically formed Cu/Cu2O interface was investigated by cross-sectional TEM (Transmission Electron Microscopy) methods. Copper (001) films were oxidized in oxygen within a UHV chamber to create Cu2O islands that formed epitaxially with respect to the Cu film. The cross-sectional Cu2O/Cu TEM sample was prepared by dual beam (DB) focused ion beam (FIB) instrument and the interface was probed by high-resolution TEM (HREM) and electron energy loss spectrum (EELS). It is found that Cu2O {110} layer distance significantly decreases from the interface area to the bulk Cu2O region, which is about 3∼4 unit cell thickness in Cu2O side; while the {100Cu2O layer distance increases with increasing distance from the interface region. The chemical Cu/Cu2O interface thickness has been measured with EELS analysis, which is about 2nm where the oxidation state of Cu gradually changes from Cu0 to Cu+1. This transition region indicates the area where Cu/Cu2O interface exists and suggests the existence of metastable Cu oxides. The Cu2O island growth mechanism of predominantly anion interfacial diffusion at the initial stage oxidation has been proposed.

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Effect of Silicon Additions in CrSi (10, 20, 30, 40 at. % Si) Magnetron Targets on Microstructure of Reactively Deposited (Cr,Si)N Coatings

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.186.182 ◽

2012 ◽

Vol 186 ◽

pp. 182-187 ◽

Cited By ~ 1

Author(s):

Justyna Grzonka ◽

Ryszard Mania ◽

János L. Lábár ◽

Jerzy Morgiel

Keyword(s):

Silicon Content ◽

Focused Ion Beam ◽

Ion Beam ◽

Amorphous Material ◽

Chemical Compositions ◽

Silicon Substrates ◽

Ambient Temperatures ◽

Energy Filtering ◽

Thin Foils ◽

Gradient Microstructure

The CrSi compacts containing 10, 20, 30 and 40 at. % Si sintered from mixed elemental powders were used as targets for reactively deposited magnetron (Cr,Si)N coatings. The silicon substrates were kept either at ambient temperature or heated up to 600 °C. The microstructure observations were performed using TECNAI FEG (200 kV) with EDAX X-ray Energy Dispersive Spectroscopy (EDS) system and JEOL 3010 (300 kV) with Gatan Energy Filtering (GIF) attachment microscopes. The thin foils were cut using QUANTA Focused Ion Beam (FIB) system. The performed investigations proved that increasing silicon content in coatings deposited at 600 °C using CrSi10, CrSi20 and CrSi30 targets caused a refining of their fully crystalline CrN-type columnar microstructure from ~ 40 to ~ 35 and ~ 25 nm. The deposition performed from the same targets, but at ambient temperatures, i.e. without resistive heating of the substrates, produced coatings of mixed crystalline-amorphous type. They were characterized by gradient microstructure, i.e. amorphous material was prevailing close to the substrate and decreasing close to coating surface. The rising of silicon content in the targets resulted in decreasing amount of crystalline phase. The coatings obtained from Cr40Si target were fully amorphous independently of substrate temperature during deposition. The measurements of local chemical compositions obtained using EDS technique indicated that the Cr:Si ratio in the coatings roughly reproduced that present in the targets used for their deposition. Additionally, these measurements indicated that all coatings are contaminated with oxygen. The mapping of chemical composition using GIF technique of mixed crystalline-amorphous coatings proved that they are enriched in Cr and Si, respectively. The present results showed, that relying on single CrSi target magnetron sputtering the crystalline-amorphous nano-composite could be obtain at silicon additions from 10 to 30 at %, i.e. well above were that type of microstructure is formed during deposition using double target magnetron systems. Additionally, for the first time, the measurements helped to prove that the crystallites and amorphous material are enriched in chromium and silicon respectively, i.e. confirmed presence of CrN/Si3N4 composite.

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