scholarly journals Investigation of the effect of annealing on Si(100) substrate modified by Ga+ focused ion beam

2021 ◽  
Vol 2086 (1) ◽  
pp. 012027
Author(s):  
M M Eremenko ◽  
N A Shandyba ◽  
N E Chernenko ◽  
S V Balakirev ◽  
L S Nikitina ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Silicon Surface ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Material ◽  
Significant Damage

Abstract In this work, we studied the effect of annealing the silicon surface on the morphology of focused ion beam modified areas. It was found that an increase in the ion beam accelerating voltage during surface treatment significantly affects the morphology and the appearance of the implanted material on the surface or its absence/evaporation during annealing. It is shown that an increase in number of ion beam passes leads to the formation of holes on the surface of the modified areas, which is a sign that significant damage to the substrate material has occurred.

Annealing recovery of nanoscale silicon surface damage caused by Ga focused ion beam

2015 ◽  
Vol 343 ◽  
pp. 56-69 ◽  
Author(s):  
Y.J. Xiao ◽  
F.Z. Fang ◽  
Z.W. Xu ◽  
X.T. Hu
Keyword(s):  
Silicon Surface ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Surface Damage

An accurate and efficient control over the present numerical model of depth of sputtering in focused ion beam milling

2009 ◽  
Vol 223 (1) ◽  
pp. 9-18 ◽  
Author(s):  
S N Bhavsar ◽  
S Aravindan ◽  
P Venkateswara Rao
Keyword(s):  
Experimental Data ◽  
Mathematical Model ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Material ◽  
Milling Process ◽  
Intensity Function ◽  
Two Parameters ◽  
The Mathematical Model ◽  
Better Than

In many applications, such as fabrication of microtools, microsurgical instruments, microgears, and so on, material must be removed precisely with a focused ion beam (FIB) milling process to generate a specified geometry on substrate material. A mathematical model is available to calculate depth of sputtering at each point on substrate material in order to generate a specified geometry, but the results of the existing model deviates from experimental data. In the current paper, normalized pixel spacing and ratio of redeposition to beam velocity are the two parameters that have been considered in calculation of depth of sputtering during the FIB milling process. A proposed mathematical model incorporating the effect of redeposition has been simulated for parabolic and rectangular trench profiles, and it has been proven to be better than the existing model through comparison with experimental data of parabolic and rectangular geometry on silicon material. In addition, efforts have been made to reduce the amount of numerical calculation in the simulation process by utilizing a Gaussian mask in the existing model instead of the usual Gaussian intensity function. The Gaussian mask prevents the need for repeated calculation of Gaussian intensity function in the mathematical model of depth of sputtering, and in turn reduces the time of computation.

Focused Ion Beam Micromachining of GaN Photonic Devices

1998 ◽  
Vol 537 ◽  
Author(s):  
Irving Chyr ◽  
A. J. Steckl
Keyword(s):  
Focused Ion Beam ◽  
Incident Angle ◽  
Ion Beam ◽  
Photonic Devices ◽  
Substrate Material ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Effective Yield ◽  
Dose Ranging ◽  
Sputtering Yield

AbstractGa+ and Au+ focused ion beams (FIB) are used to micromachine GaN films. The GaN micromachining has been studied at energies from 30-90 keV, incident angle from 0-30°, and number of repetitive scans from 10 to 50 scans. Trenches milled in GaN have vertical and smooth side-walls and very smooth bottoms. The micromachining rate was found to be fairly independent of ion dose, ranging from 0.4 to 0.6 μm3/nC for Ga+ and I to 2 Pm3/nC for Au+. This translates into an effective yield of of 6-7 atoms/ion for Ga+ and 21-26 atoms/ion for Au+. This represents the highest direct FIB removal yield reported to date. We have also investigated the micromachining of GaN substrate material: c-face sapphire. Using FIB Ga+, sapphire has an effective yield of ∼2-2.5 atoms/ion, or approximately 1/3 of the GaN sputtering yield. For the materials investigated, we found the sputtering yield to be inversely proportional to the strength of the material chemical bond. We also describe the application of the FIB μmachining technique to the fabrication of small period Distributed Bragg Reflector (DBR) mirrors for a short cavity GaN laser structure.

scholarly journals Focused Ion Beam Micromachining of GaN Photonic Devices

1999 ◽  
Vol 4 (S1) ◽  
pp. 920-925
Author(s):  
Irving Chyr ◽  
A. J. Steckl
Keyword(s):  
Focused Ion Beam ◽  
Incident Angle ◽  
Ion Beam ◽  
Photonic Devices ◽  
Substrate Material ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Effective Yield ◽  
Dose Ranging ◽  
Sputtering Yield

Ga+ and Au+ focused ion beams (FIB) are used to micromachine GaN films. The GaN micromachining has been studied at energies from 30-90 keV, incident angle from 0-30°, and number of repetitive scans from 10 to 50 scans. Trenches milled in GaN have vertical and smooth side-walls and very smooth bottoms. The micromachining rate was found to be fairly independent of ion dose, ranging from 0.4 to 0.6 µm3/nC for Ga+ and 1 to 2 µm3/nC for Au+. This translates into an effective yield of of 6-7 atoms/ion for Ga+ and 21-26 atoms/ion for Au+. This represents the highest direct FIB removal yield reported to date. We have also investigated the micromachining of GaN substrate material: c-face sapphire. Using FIB Ga+, sapphire has an effective yield of ∼2-2.5 atoms/ion, or approximately 1/3 of the GaN sputtering yield. For the materials investigated, we found the sputtering yield to be inversely proportional to the strength of the material chemical bond. We also describe the application of the FIB μmachining technique to the fabrication of small period Distributed Bragg Reflector (DBR) mirrors for a short cavity GaN laser structure.

Damage in III–V Compounds during Focused Ion Beam Milling

2005 ◽  
Vol 11 (5) ◽  
pp. 446-455 ◽  
Author(s):  
S. Rubanov ◽  
P.R. Munroe
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Incident Beam ◽  
Theoretical Models ◽  
Crystalline Phases ◽  
Transmission Electron ◽  
Milled Material ◽  
Significant Damage ◽  
Side Walls ◽  
Pass Through

The damage layers generated in III–V compounds exposed to energetic gallium ions in a focused ion beam (FIB) instrument have been characterized by transmission electron microscopy (TEM). The damage on the side walls of the milled trenches is in the form of amorphous layers associated with direct amorphization from the gallium beam, rather than from redeposition of milled material. However, the damage on the bottom of the milled trenches is more complex. For InP and InAs the damage layers include the presence of crystalline phases resulting from recrystallization associated heating from the incident beam and gallium implantation. In contrast, such crystalline phases are not present in GaAs. The thicknesses of the damage layers are greater than those calculated from theoretical models of ion implantation. These differences arise because the dynamic nature of FIB milling means that the energetic ion beams pass through already damaged layers. In InP recoil phosphorus atoms also cause significant damage.

Selected-Area Growth of Carbon Nanotubes by the Combination of Focused Ion Beam and Chemical Vapor Deposition Techniques

2003 ◽  
Vol 9 (6) ◽  
pp. 516-521 ◽  
Author(s):  
Jun Jiao ◽  
Lifeng Dong ◽  
Sean Foxley ◽  
Catherine L. Mosher ◽  
David W. Tuggle
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Synthesis ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Hydrocarbon Gases ◽  
Compound C

In this article, we report a technique for growing carbon nanotubes in a more controllable fashion, which enables us to synthesize nanotubes directly in various forms of designed patterns. This nanofabrication process is based on a combination of focused ion beam (FIB) and chemical vapor deposition (CVD) techniques. In this process, arrays of conductive patterns were first deposited on silicon substrates by directing a gaseous compound (C9H16Pt) via the capillary needle-sized nozzles within a FIB system. The substrates were then coated with catalyst and further modified by the FIB to localize the position of the catalyst. Finally, the growth of carbon nanotubes on the designed substrates was carried out by CVD of hydrocarbon gases. This fabrication technique has the advantage of positioning carbon nanotubes in selected locations. This may open up opportunities for the direct synthesis of carbon nanotubes onto almost any substrate material, thus allowing fabrication of carbon nanotube-based devices.

Failure Analysis of DRAM Storage Node Trench Capacitors for 0.35-Micron and Follow-On Technologies Using the Focused Ion Beam for Electrical and Physical Analysis

1996 ◽  
Author(s):  
G. Benstetter ◽  
G. Bomberger ◽  
P. Coutu ◽  
R. Danyew ◽  
R. Douse
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Material ◽  
Mechanical Polishing ◽  
Physical Analysis ◽  
Storage Node ◽  
Wet Chemical ◽  
Voltage Contrast

Abstract Reducing the cell size of DRAMs in 0.35 micron and follow-on technologies requires failure analysis techniques that can analyze single storage node trench capacitors on both test sites and actual product. A combination of electrical microprobing, probeless voltage contrast and physical delayering procedures, all based on focused- ion-beam (FIB) techniques, are described. Because of precise fail localization, high resolution scanning electron microscope (SEM) imaging enables the distinction between process defects and intrinsic breakdowns of node dielectric defects. Isolated storage cells can be electrically characterized by depositing small probe pads, using FIB for contact hole milling and probe-pad deposition. To localize trench capacitors with a leakage path to the surrounding substrate, the trenches are isolated by mechanical polishing and probeless voltage contrast in the FIB tool. Failing trench capacitors can be marked in the FIB tool. Physical isolation of leaking trench capacitors can be achieved by recessing the adjacent trench capacitors, with the FIB used for milling and a subsequent wet chemical removal added for the remaining substrate material. Alternatively, trench capacitors can be inspected from the backside when stabilized by a quartz deposition on top, followed by mechanical polishing from the side and a wet chemical etching of the remaining substrate material. In both cases, the dielectric of the node trench capacitors can be inspected by high resolution SEMs and the defect areas precisely analyzed.

Etching characteristics of a silicon surface induced by focused ion beam irradiation

2006 ◽  
Vol 9 (1/2) ◽  
pp. 34 ◽  
Author(s):  
Noritaka Kawasegi ◽  
Noboru Morita ◽  
Shigeru Yamada ◽  
Noboru Takano ◽  
Tatsuo Oyama ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

Photon Emission Spectra through Silicon of Various Thicknesses

2011 ◽  
Author(s):  
Arkadiusz Glowacki ◽  
Carlo Pagano ◽  
Christian Boit ◽  
Yoshiyuki Yokoyama ◽  
Arkadiusz Jankowski ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Near Infrared ◽  
Ion Beam ◽  
Photon Emission ◽  
Emission Spectra ◽  
Substrate Material ◽  
Short Channel ◽  
Electron Hole ◽  
Infrared Spectral ◽  
Spectrally Resolved

Abstract In this work we present spectrally resolved photon emission microscopy (SPEM) measurements originating from short-channel MOSFETs acquired through the backside of the silicon substrate. Two commonly used detectors have been chosen for the detection of electroluminescence (EL) in the visible and near-infrared spectral regime, namely Si-CCD and InGaAs. As the backside photon emission (PE) inspection is strongly influenced by the absorption of light in a substrate material, the SPEM experiments have been carried out through thinned silicon layers as obtained by mechanical grinding and local focused-ion-beam (FIB) assisted Si material removal. Intrinsic Si absorption (generation of electron-hole pairs) and absorption on free carriers have been modeled to be able to calibrate experimental results and obtain devicerelated PE spectra. The results show no evidences of specific transitions and lead to a conclusion that photon emission from MOSFETs is fully electrical field related.

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