Photon Emission Spectra through Silicon of Various Thicknesses

2011 ◽  
Author(s):  
Arkadiusz Glowacki ◽  
Carlo Pagano ◽  
Christian Boit ◽  
Yoshiyuki Yokoyama ◽  
Arkadiusz Jankowski ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Near Infrared ◽  
Ion Beam ◽  
Photon Emission ◽  
Emission Spectra ◽  
Substrate Material ◽  
Short Channel ◽  
Electron Hole ◽  
Infrared Spectral ◽  
Spectrally Resolved

Abstract In this work we present spectrally resolved photon emission microscopy (SPEM) measurements originating from short-channel MOSFETs acquired through the backside of the silicon substrate. Two commonly used detectors have been chosen for the detection of electroluminescence (EL) in the visible and near-infrared spectral regime, namely Si-CCD and InGaAs. As the backside photon emission (PE) inspection is strongly influenced by the absorption of light in a substrate material, the SPEM experiments have been carried out through thinned silicon layers as obtained by mechanical grinding and local focused-ion-beam (FIB) assisted Si material removal. Intrinsic Si absorption (generation of electron-hole pairs) and absorption on free carriers have been modeled to be able to calibrate experimental results and obtain devicerelated PE spectra. The results show no evidences of specific transitions and lead to a conclusion that photon emission from MOSFETs is fully electrical field related.

Photon Emission Spectra of FETs as Obtained by InGaAs Detector

2012 ◽  
Author(s):  
Arkadiusz Glowacki ◽  
Christian Boit ◽  
Yoshiyuki Yokoyama ◽  
Philippe Perdu
Keyword(s):  
Photon Emission ◽  
Transmission Function ◽  
Emission Spectra ◽  
Operating Conditions ◽  
Si Substrate ◽  
Short Channel ◽  
Interference Band ◽  
Band Pass ◽  
Spectrally Resolved ◽  
Ingaas Detector

Abstract In this work we present spectrally resolved photon emission microscopy (SPEM) measurements for short-channel FETs acquired through the backside of the Si substrate using InGaAs detector. Two spectrum resolution methods have been used: continuous using a prism and discrete using a set of interference band-pass filters. The photon emission (PE) spectra have been corrected for the background / noise of the detector; they have been calibrated with respect to the system optical transmission function and corrected for the absorption on free carriers in the remaining layer of Si substrate. We discuss all the standardization aspects thoroughly as they are crucial in order to obtain correct device-intrinsic PE spectral information. Finally, we present the spectral results for FET devices operated in various operating conditions.

Photon Emission Spectral Signatures of AlGaN/GaN HEMT for Functional and Reliability Analysis

2008 ◽  
Author(s):  
Arkadiusz Glowacki ◽  
Christian Boit ◽  
Richard Lossy ◽  
Joachim Würfl
Keyword(s):  
Reliability Analysis ◽  
Gate Voltage ◽  
Near Infrared ◽  
Photon Emission ◽  
Electrical Characterization ◽  
Spectral Signatures ◽  
Operating Modes ◽  
Gan Hemt ◽  
Spectrally Resolved ◽  
Performance Variations

Abstract Non-degraded and degraded AlGaN/GaN HEMT devices have been characterized electrically and investigated in various operating modes using integral and spectrally resolved photon emission (PE). In degraded devices the PE dependence on the gate voltage differs from the non-degraded devices. Various types of dependencies on the gate voltage have been identified when investigating local degradation sites. PE spectroscopy was performed at various bias conditions. For both devices broad spectra have been obtained in a wavelength regime from visible to near-infrared, including local performance variations. Signatures of the degradation have been determined in the electrical characterization, in integral PE distribution and in the PE spectrum.

An Infrared Microscope for Use on a Focused Ion Beam for Circuit Edit and Backside Edit Applications

2015 ◽  
Author(s):  
Alexander Richards ◽  
Matthew Weschler ◽  
Michael Durller
Keyword(s):  
Focused Ion Beam ◽  
Near Infrared ◽  
Ion Beam ◽  
Visible Spectrum ◽  
Camera System ◽  
Buried Structures ◽  
Ir Camera ◽  
Area Of Interest ◽  
Near Ultraviolet ◽  
Infrared Microscope

Abstract To help solve the navigational problem, i.e., being able to successfully locate a circuit for probing or editing without destroying chip functionality, a near-infrared (NIR), near-ultraviolet (NUV), and visible spectrum camera system was developed that attaches to most focused ion beam (FIB) or scanning electron microscope vacuum chambers. This paper reviews the details of the design and implementation of the NIR/NUV camera system, as instantiated upon the FEI FIB 200, with a particular focus on its use for the visualization of buried structures, and also for non-destructive real time area of interest location and end point detection. It specifically considers the use of the micro-optical camera system for its benefit in assisting with frontside and backside circuit edit, as well as other typical FIB milling activities. The quality of the image obtained by the IR camera rivals or exceeds traditional optical based imaging microscopy techniques.

ORGANIC SEMICONDUCTOR MICRO-PILLAR PROCESSED BY FOCUSED ION BEAM MILLING

2005 ◽  
Vol 03 (supp01) ◽  
pp. 223-228 ◽  
Author(s):  
WEN-CHANG HUNG ◽  
A. ADAWI ◽  
A. TAHRAOUI ◽  
A. G. CULLIS
Keyword(s):  
Quantum Dot ◽  
Single Molecule ◽  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Emission ◽  
Micro Machining ◽  
Single Photon Emission ◽  
Fabrication Procedure ◽  
Pillar Structure

In order to control light, different strategies have been applied by placing an optically active medium into a semiconductor resonator and certain applications such as LEDs and laser diodes have been commercialized for many years. The possibility of nanoscale optical applications has created great interesting for quantum nanostructure research. Recently, single photon emission has been an active area of quantum dot research. A quantum dot is place between distributed Bragg reflectors (DBRs) within a micro-pillar structure. In this study, we shall report on an active layer composed of an organic material instead of a semiconductor. The micro-pillar structure is fabricated by a focused ion beam (FIB) micro-machining technique. The ultimate target is to achieve a single molecule within the micro-pillar and therefore to enable single photon emission. Here, we demonstrate some results of the fabrication procedure of a 5 micron organic micro-pillar via the focused ion beam and some measurement results from this study. The JEOL 6500 dual column system equipped with both electron and ion beams enables us to observe the fabrication procedure during the milling process. Furthermore, the strategy of the FIB micro-machining method is reported as well.

Picosecond imaging of signal propagation in integrated circuits

2017 ◽  
Vol 6 (2) ◽  
Author(s):  
Sven Frohmann ◽  
Enrico Dietz ◽  
Helmar Dittrich ◽  
Heinz-Wilhelm Hübers
Keyword(s):  
Integrated Circuits ◽  
Near Infrared ◽  
Photon Emission ◽  
Signal Propagation ◽  
Optical Analysis ◽  
Process Technology ◽  
Signal Tracking ◽  
Hot Carrier ◽  
Infrared Spectral Range ◽  
Infrared Spectral

Abstract:Optical analysis of integrated circuits (IC) is a powerful tool for analyzing security functions that are implemented in an IC. We present a photon emission microscope for picosecond imaging of hot carrier luminescence in ICs in the near-infrared spectral range from 900 to 1700 nm. It allows for a semi-invasive signal tracking in fully operational ICs on the gate or transistor level with a timing precision of approximately 6 ps. The capabilities of the microscope are demonstrated by imaging the operation of two ICs made by 180 and 60 nm process technology.

scholarly journals Large Area Nanohole Arrays for Sensing Fabricated by Interference Lithography

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2182 ◽  
Author(s):  
Chiara Valsecchi ◽  
Luis Enrique Gomez Armas ◽  
Jacson Weber de Menezes
Keyword(s):  
Soft Lithography ◽  
Focused Ion Beam ◽  
Near Infrared ◽  
Ion Beam ◽  
Production Method ◽  
Interference Lithography ◽  
Visible Range ◽  
Large Area ◽  
Nanohole Array ◽  
Nanohole Arrays

Several fabrication techniques are recently used to produce a nanopattern for sensing, as focused ion beam milling (FIB), e-beam lithography (EBL), nanoimprinting, and soft lithography. Here, interference lithography is explored for the fabrication of large area nanohole arrays in metal films as an efficient, flexible, and scalable production method. The transmission spectra in air of the 1 cm2 substrate were evaluated to study the substrate behavior when hole-size, periodicity, and film thickness are varied, in order to elucidate the best sample for the most effective sensing performance. The efficiency of the nanohole array was tested for bulk sensing and compared with other platforms found in the literature. The sensitivity of ~1000 nm/RIU, achieved with an array periodicity in the visible range, exceeds near infrared (NIR) performances previously reported, and demonstrates that interference lithography is one of the best alternative to other expensive and time-consuming nanofabrication methods.

Identification of an IDDQ Failure Mechanism Using a Variety of Front and Backside Analytical Techniques

2003 ◽  
Author(s):  
Jim Shearer ◽  
Kim Le ◽  
Xiaoyu Yang ◽  
Monty Cleeves ◽  
Al Meeks
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Metal Layer ◽  
Ion Beam ◽  
Photon Emission ◽  
Analytical Techniques ◽  
Cmos Process ◽  
Microscopy Imaging ◽  
Leakage Path ◽  
Dual Beam

Abstract This article presents a case study to solve an IDDQ leakage problem using a variety of failure analysis techniques on a product. The product is fabricated using a 3-metal-layer 0.25 μm CMOS process with the addition of Matrix's proprietary 3-D memory layers. The failure analysis used both top and backside analytical techniques, including liquid crystal, photon emission microscopy from both front and back, dual-beam focused ion beam cross-sectioning, field emission scanning electron microscopy imaging, parallel-lap/passive voltage contrast, microprobing of parallel-lapped samples, and scanning capacitance microscopy. The article discusses how the application of each of the techniques narrowed down the search for this IDDQ leakage path. This leakage path was eliminated using the two corrective actions: The resist is pre-treated prior to ion implantation to produce a consistent resist sidewall profile; and the Nwell boundaries were adjusted in the next Nwell mask revision.

An accurate and efficient control over the present numerical model of depth of sputtering in focused ion beam milling

2009 ◽  
Vol 223 (1) ◽  
pp. 9-18 ◽  
Author(s):  
S N Bhavsar ◽  
S Aravindan ◽  
P Venkateswara Rao
Keyword(s):  
Experimental Data ◽  
Mathematical Model ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Material ◽  
Milling Process ◽  
Intensity Function ◽  
Two Parameters ◽  
The Mathematical Model ◽  
Better Than

In many applications, such as fabrication of microtools, microsurgical instruments, microgears, and so on, material must be removed precisely with a focused ion beam (FIB) milling process to generate a specified geometry on substrate material. A mathematical model is available to calculate depth of sputtering at each point on substrate material in order to generate a specified geometry, but the results of the existing model deviates from experimental data. In the current paper, normalized pixel spacing and ratio of redeposition to beam velocity are the two parameters that have been considered in calculation of depth of sputtering during the FIB milling process. A proposed mathematical model incorporating the effect of redeposition has been simulated for parabolic and rectangular trench profiles, and it has been proven to be better than the existing model through comparison with experimental data of parabolic and rectangular geometry on silicon material. In addition, efforts have been made to reduce the amount of numerical calculation in the simulation process by utilizing a Gaussian mask in the existing model instead of the usual Gaussian intensity function. The Gaussian mask prevents the need for repeated calculation of Gaussian intensity function in the mathematical model of depth of sputtering, and in turn reduces the time of computation.

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