scholarly journals STM Light Emission and I(V) study of single gold nanoantenna

2021 ◽  
Vol 2086 (1) ◽  
pp. 012103
Author(s):  
V A Shkoldin ◽  
D V Levedev ◽  
A M Mozharov ◽  
D V Permyakov ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Light Emission ◽  
Local Density ◽  
Optical Data ◽  
Light Emitters ◽  
Current Voltage ◽  
Optical Modes ◽  
Metal Tip ◽  
On Chip ◽  
Stm Light Emission ◽  
Photon Generation

Abstract Hight-speed optical nanoemitters are of importance for on-chip optical data processing. A tunnel junctions can be a base for such light emitters, however such structures suffer from low quantum efficiency. One of the ways to improve efficiency of tunneling electron energy to photon generation conversion is the increase of the local density of optical states by using of optical nanoantennas. In this work, we study optoelectronic properties of single gold nanodisc with high spatial resolution. We show nonuniform distribution of electromagnetic near-fields of nanodisk, which is consistent with nanoantenna optical modes. And we demonstrate direct correlation between nanoantenna optical states and features on current-voltage characteristics of tunnel junction between metal tip and nanodisk.

Silicon Based Light Emitters for On-Chip Optical Interconnects

2005 ◽  
Vol 108-109 ◽  
pp. 749-754 ◽  
Author(s):  
Martin Kittler ◽  
Tzanimir Arguirov ◽  
Winfried Seifert ◽  
X. Yu ◽  
Manfred Reiche
Keyword(s):  
Light Emission ◽  
Line Emission ◽  
Dislocation Network ◽  
Light Emitters ◽  
Order Of Magnitude ◽  
On Chip ◽  
Silicon Based ◽  
Wafer Direct Bonding ◽  
High Bulk ◽  
Si Wafer

Electroluminescence of B and P implanted samples has been studied. P implantation is found to have a similar effect on light emission as B implant. The band-to-band (BB) luminescence of P implanted diodes is observed to increase by more than one order of magnitude upon rising the temperature and an internal efficiency of 2 % has been reached at 300 K. An efficiency larger than 5% seems to be reachable. The strong BB line emission at 1.1 &m is attributed to high bulk SRH lifetime. The BB line escapes from the substrate below the p-n junction. It is not due to the implantation-related defects/dislocations. The luminescence spectrum can be tailored to achieve dominance of the dislocation-related D1 line at about 1.5 &m. It is observed that a regular periodic dislocation network, formed by Si wafer direct bonding with a specific misorientation, exhibits even at 300 K only D1 photoluminescence. Such a dislocation network is believed to be a serious candidate to gain an efficient Si-based light emitter.

scholarly journals On-chip broadband nonreciprocal light storage

Nanophotonics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 75-82
Author(s):  
Moritz Merklein ◽  
Birgit Stiller ◽  
Khu Vu ◽  
Pan Ma ◽  
Stephen J. Madden ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Communication Systems ◽  
Optical Data ◽  
Optical Signals ◽  
Light Storage ◽  
Optical Isolation ◽  
Wide Range ◽  
Optical Modes ◽  
Order Of Magnitude ◽  
On Chip

AbstractBreaking the symmetry between forward- and backward-propagating optical modes is of fundamental scientific interest and enables crucial functionalities, such as isolators, circulators, and duplex communication systems. Although there has been progress in achieving optical isolation on-chip, integrated broadband nonreciprocal signal processing functionalities that enable transmitting and receiving via the same low-loss planar waveguide, without altering the frequency or mode of the signal, remain elusive. Here, we demonstrate a nonreciprocal delay scheme based on the unidirectional transfer of optical data pulses to acoustic waves in a chip-based integration platform. We experimentally demonstrate that this scheme is not impacted by simultaneously counterpropagating optical signals. Furthermore, we achieve a bandwidth more than an order of magnitude broader than the intrinsic optoacoustic linewidth, linear operation for a wide range of signal powers, and importantly, show that this scheme is wavelength preserving and avoids complicated multimode structures.

scholarly journals Purcell-Enhanced and Indistinguishable Single-Photon Generation from Quantum Dots Coupled to On-Chip Integrated Ring Resonators

Nano Letters ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 6357-6363 ◽  
Author(s):  
Łukasz Dusanowski ◽  
Dominik Köck ◽  
Eunso Shin ◽  
Soon-Hong Kwon ◽  
Christian Schneider ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Single Photon ◽  
Ring Resonators ◽  
On Chip ◽  
Photon Generation

scholarly journals Near-Field Excitation of Bound States in the Continuum in All-Dielectric Metasurfaces through a Coupled Electric/Magnetic Dipole Model

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 998
Author(s):  
Diego R. Abujetas ◽  
José A. Sánchez-Gil
Keyword(s):  
Magnetic Dipole ◽  
Density Of States ◽  
Bound States ◽  
Local Density ◽  
Near Field ◽  
Field Pattern ◽  
Local Density Of States ◽  
Optical Modes ◽  
Source Excitation ◽  
The Continuum

Resonant optical modes arising in all-dielectric metasurfaces have attracted much attention in recent years, especially when so-called bound states in the continuum (BICs) with diverging lifetimes are supported. With the aim of studying theoretically the emergence of BICs, we extend a coupled electric and magnetic dipole analytical formulation to deal with the proper metasurface Green function for the infinite lattice. Thereby, we show how to excite metasurface BICs, being able to address their near-field pattern through point-source excitation and their local density of states. We apply this formulation to fully characterize symmetry-protected BICs arising in all-dielectric metasurfaces made of Si nanospheres, revealing their near-field pattern and local density of states, and, thus, the mechanisms precluding their radiation into the continuum. This formulation provides, in turn, an insightful and fast tool to characterize BICs (and any other leaky/guided mode) near fields in all-dielectric (and also plasmonic) metasurfaces, which might be especially useful for the design of planar nanophotonic devices based on such resonant modes.

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

A 16 Gb/s Adaptive Bandwidth On-Chip Bus Based on Hybrid Current/Voltage Mode Signaling

2006 ◽  
Vol 41 (2) ◽  
pp. 461-473 ◽  
Author(s):  
R. Bashirullah ◽  
W. Liu ◽  
R. CavinIII ◽  
D. Edwards
Keyword(s):  
Voltage Mode ◽  
Current Voltage ◽  
Adaptive Bandwidth ◽  
On Chip

scholarly journals STM Light Emission Spectroscopy of Surface Micro-Structures.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (5) ◽  
pp. 286-290
Author(s):  
Yoichi UEHARA ◽  
Sukekatsu USHIODA
Keyword(s):  
Emission Spectroscopy ◽  
Light Emission ◽  
Stm Light Emission ◽  
Micro Structures

Noise Bus Modeling in Network on Chip

2018 ◽  
Vol 27 (09) ◽  
pp. 1850149 ◽  
Author(s):  
Moez Balti
Keyword(s):  
Bit Error Rate ◽  
Network On Chip ◽  
Waveform Relaxation ◽  
Signal Source ◽  
Electrical Circuits ◽  
Coupling Noise ◽  
Current Voltage ◽  
Coupled Lines ◽  
Simulation Results ◽  
On Chip

This paper considers the noise modeling of interconnections in on-chip communication. We present an approach to illustrate modeling and simulation of interconnections on chip microsystems that consist of electrical circuits connected to subsystems described by partial differential equations, which are solved independently. A model for energy dissipation in RLC mode is proposed for the switching current/voltage of such on-chip interconnections. The Waveform Relaxation (WR) algorithm is presented in this paper to address limiting in simulating NoCs due to the large number of coupled lines. We describe our approach to the modeling of on-chip interconnections. We present an applicative example of our approach with VHDL-AMS implementations and simulation results. This article analyzes the coupling noise, the bit error rate (BER) as well as the noise as a function of the rise/fall time of the signal source which can significantly limit the scalability of the NoCs.

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