scholarly journals Effect of Al Content and Annealing Temperature on Cold Workability of CuAlMn Alloys

2018 ◽  
Vol 381 ◽  
pp. 012153
Author(s):  
Yuqin Jiao ◽  
Hongxin Zhang ◽  
Tiezhu Zhang
Keyword(s):  
Annealing Temperature ◽  
Al Content ◽  
Cold Workability

Processing and Properties of FeAl Sheets Obtained by Roll Compaction and Sintering of Water Atomized Powder

1998 ◽  
Vol 552 ◽  
Author(s):  
S. C. Deevi ◽  
M. R. Hajaligol ◽  
V. K. Sikka ◽  
J. McKernon ◽  
C. R. Scorey
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Vacuum Annealing ◽  
Reduction Process ◽  
Vacuum Furnace ◽  
Al Content ◽  
Metallurgical Processing ◽  
Fine Microstructure ◽  
Roll Compaction ◽  
Edge Cracking

ABSTRACTThe low ductilities of FeAl alloys led us to explore powder metallurgical processing technology to obtain sheets of 0.2mm thickness as opposed to manufacturing processes based on hot rolling of cast FeAl alloys. In our approach, water atomized FeAl powders were roll compacted to 0.66mm with a polymeric binder using two counter rotating rolls to a green density of 3.1 g/cc. Roll compacted green sheets were then de-bindered in nitrogen in the temperature range of 300 to 600°C for several hours prior to sintering the sheets in vacuum. Sintered sheets were rolled down from 0.66 to 0.20 mm in three different stages resulting in a total reduction of 69% Vacuum annealing of the sheets was carried out between each stage of the reduction process to eliminate edge cracking associated with the work hardening of the FeAl. The properties of the FeAl sheets depend on the Al content, annealing temperature and time in a vacuum furnace. The fine microstructure of FeAl sheets led to tensile elongations of 4 to 6%. The sheets are formable at room temperature, and possess excellent mechanical properties both at room and high temperatures.

Study on the P-Type Doping of AlGaN/GaN Superlattice for Blue LED

2011 ◽  
Vol 343-344 ◽  
pp. 97-100
Author(s):  
Jun Feng Chen
Keyword(s):  
Active Layer ◽  
Ohmic Contact ◽  
Annealing Temperature ◽  
Period Length ◽  
Blue Led ◽  
Al Content ◽  
Superlattice Structure ◽  
P Type ◽  
Relationship Of ◽  
The Relationship

We studied the relationship of the superlattice structure with the doping efficiency in detail by semi-classic calculation and follow experiment. The results show that period length of about 9nm and Al content of 30% is optimal. The Hall, AFM and PL measurement show that the best annealing temperature under atmosphere is about 540°C to 580°C. Finally we obtained the sample with resistivity of 0.31Ω·cm. It can be used for fabricating p type ohmic contact and active layer for blue LED.

scholarly journals Effects of Annealing Temperature and Al Content on Microstructures and Properties of Al-brass

2012 ◽  
Vol 27 ◽  
pp. 1823-1828 ◽  
Author(s):  
Ruiqing Liu ◽  
Wenjin Shang ◽  
Zhigang Huang ◽  
Yuxia Wang
Keyword(s):  
Annealing Temperature ◽  
Al Content

scholarly journals Structural and electrical characterization of AuPtAlTi Ohmic contacts to AlGaN∕GaN with varying annealing temperature and Al content

2008 ◽  
Vol 103 (7) ◽  
pp. 074501 ◽  
Author(s):  
M. W. Fay ◽  
Y. Han ◽  
P. D. Brown ◽  
I. Harrison ◽  
K. P. Hilton ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Electrical Characterization ◽  
Al Content

Nucleation of Disorder in Fe3Al Alloys

1967 ◽  
Vol 25 ◽  
pp. 312-313
Author(s):  
P. R. Swann ◽  
W. R. Duff ◽  
R. M. Fisher
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Antiphase Domain ◽  
Effect Of Temperature ◽  
Domain Structures ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Higher Temperature ◽  
The One

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

Locating Al in the DABCO catalyst before and after Al extraction

1990 ◽  
Vol 48 (4) ◽  
pp. 265-267
Author(s):  
Kathleen B. Reuter
Keyword(s):  
Active Site ◽  
Inverse Relationship ◽  
Transverse Direction ◽  
Reaction Rate ◽  
Acid Phosphate ◽  
Fracture Surfaces ◽  
Al Content ◽  
Before And After ◽  
Relationship Of

The reaction rate and efficiency of piperazine to 1,4-diazabicyclo-octane (DABCO) depends on the Si/Al ratio of the MFI topology catalysts. The Al was shown to be the active site, however, in the Si/Al range of 30-200 the reaction rate increases as the Si/Al ratio increases. The objective of this work was to determine the location and concentration of Al to explain this inverse relationship of Al content with reaction rate.Two silicalite catalysts in the form of 1/16 inch SiO2/Al2O3 bonded extrudates were examined: catalyst A with a Si/Al of 83; and catalyst B, the acid/phosphate Al extracted form of catalyst A, with a Si/Al of 175. Five extrudates from each catalyst were fractured in the transverse direction and particles were obtained from the fracture surfaces near the center of the extrudate diameter. Particles were also obtained from the outside surfaces of five extrudates.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

Effect of annealing temperature on luminescence properties of ZnWO 4 :Eu 3+ nanophosphor

2019 ◽  
Vol 14 (5) ◽  
pp. 496-500 ◽  
Author(s):  
Chunyang Li ◽  
Xiaodi Du ◽  
Yurong Shi ◽  
Zhenling Wang
Keyword(s):  
Annealing Temperature ◽  
Luminescence Properties
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