Study on the P-Type Doping of AlGaN/GaN Superlattice for Blue LED
2011 ◽
Vol 343-344
◽
pp. 97-100
We studied the relationship of the superlattice structure with the doping efficiency in detail by semi-classic calculation and follow experiment. The results show that period length of about 9nm and Al content of 30% is optimal. The Hall, AFM and PL measurement show that the best annealing temperature under atmosphere is about 540°C to 580°C. Finally we obtained the sample with resistivity of 0.31Ω·cm. It can be used for fabricating p type ohmic contact and active layer for blue LED.
2012 ◽
Vol 557-559
◽
pp. 2065-2069
2015 ◽
Vol 723
◽
pp. 266-270
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1983 ◽
Vol 41
◽
pp. 194-195
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1970 ◽
Vol 28
◽
pp. 156-157
1991 ◽
Vol 49
◽
pp. 236-237
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