Sensitive and quantitative detection of SARS-CoV-2 antibodies from vaccinated serum by MoS2-field effect transistor

2D Materials ◽  
2021 ◽  
Author(s):  
Junqing Wei ◽  
Zhihan Zhao ◽  
Fengting Luo ◽  
Kuibo Lan ◽  
Ruibing Chen ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Vaccine Development ◽  
High Specificity ◽  
Disease Status ◽  
Negative Control ◽  
Quantitative Detection ◽  
Efficacy Evaluation ◽  
Efficient Detection ◽  
Effect Transistor

Abstract Recently, the coronavirus disease (COVID-19) pandemic caused by severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) has spread globally with major impact on public health. Novel methods that enable fast and efficient detection of the virus and the associated biomarkers, such as SARS-CoV-2 antibodies, may provide alterative opportunities for early diagnosis, disease status monitoring, and the development of vaccines. Here, we report the fabrication of a functionalized MoS2-field effect transistor (FET) for sensitive and quantitative detection of antibodies against SARS-CoV-2 spike protein receptor binding domain (S-RBD) in vaccinated serum specimens. The device was modified by SARS-CoV-2 S-RBD fusion protein on the surface and enabled rapid detection of SARS-CoV-2 antibodies. In addition, an on-chip calibration method was established for quantitative measurement. Furthermore, this method was applied to measure the levels of S-RBD antibodies in serum specimens from vaccinated donors. The devices showed no response to negative control samples from individuals who didn’t receive vaccination, suggesting the high specificity of this method. This study illustrated the successful fabrication of S-RBD functionalized MoS2-FET with potential clinical applications to facilitate vaccine development and efficacy evaluation.

Quantitative Detection of Protein Using a Top-gate Carbon Nanotube Field Effect Transistor

2007 ◽  
Vol 111 (24) ◽  
pp. 8667-8670 ◽  
Author(s):  
Masuhiro Abe ◽  
Katsuyuki Murata ◽  
Atsuhiko Kojima ◽  
Yasuo Ifuku ◽  
Mitsuaki Shimizu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Quantitative Detection ◽  
Effect Transistor

scholarly journals Detection of carbapenemase producing enterobacteria using an ion sensitive field effect transistor sensor

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Stathis D. Kotsakis ◽  
Georgios Miliotis ◽  
Eva Tzelepi ◽  
Leonidas S. Tzouvelekis ◽  
Vivi Miriagou
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Clinical Laboratory ◽  
Detection Threshold ◽  
Negative Control ◽  
Cell Suspensions ◽  
Potential Reduction ◽  
Enzyme Preparations ◽  
Accurate Detection ◽  
Effect Transistor

AbstractThe timely and accurate detection of carbapenemase-producing Enterobacterales (CPE) is imperative to manage this worldwide problem in an effective fashion. Herein we addressed the question of whether the protons produced during imipenem hydrolysis could be detected using an ion sensitive field effect transistor (ISFET). Application of the methodology on enzyme preparations showed that the sensor is able to detect carbapenemases of the NDM, IMP, KPC and NMC-A types at low nanomolar concentrations while VIM and OXA-48 responded at levels above 100 nM. Similar results were obtained when CPE cell suspensions were tested; NDM, IMP, NMC-A and KPC producers caused fast reductions of the output potential. Reduction rates with VIM-type and especially OXA-48 producing strains were significantly lower. Based on results with selected CPEs and carbapenemase-negative enterobacteria, a threshold of 10 mV drop at 30 min was set. Applying this threshold, the method exhibited 100% sensitivity for NDM, IMP and KPC and 77.3% for VIM producers. The OXA-48-positive strains failed to pass the detection threshold. A wide variety of carbapenemase-negative control strains were all classified as negative (100% specificity). In conclusion, an ISFET-based approach may have the potential to be routinely used for non OXA-48-like CPE detection in the clinical laboratory.

scholarly journals Predicting Future Prospects of Aptamers in Field-Effect Transistor Biosensors

Molecules ◽  
2020 ◽  
Vol 25 (3) ◽  
pp. 680 ◽  
Author(s):  
Cao-An Vu ◽  
Wen-Yih Chen
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
High Specificity ◽  
Label Free ◽  
Sensing Technology ◽  
Wide Range ◽  
Label Free Detection ◽  
Effect Transistor

Aptamers, in sensing technology, are famous for their role as receptors in versatile applications due to their high specificity and selectivity to a wide range of targets including proteins, small molecules, oligonucleotides, metal ions, viruses, and cells. The outburst of field-effect transistors provides a label-free detection and ultra-sensitive technique with significantly improved results in terms of detection of substances. However, their combination in this field is challenged by several factors. Recent advances in the discovery of aptamers and studies of Field-Effect Transistor (FET) aptasensors overcome these limitations and potentially expand the dominance of aptamers in the biosensor market.

scholarly journals An Extended Gate Field Effect Transistor-based (EGFET-based) Urea Microbiosensor Based on Polypyrrole

2021 ◽  
Author(s):  
Merve Oğuz ◽  
İpek Avci ◽  
Mustafa SEN
Keyword(s):  
Linear Response ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Deionized Water ◽  
Oxide Semiconductor ◽  
Quantitative Detection ◽  
Stereo Microscope ◽  
Effect Transistor ◽  
Gold Microelectrode

Here, an extended – gate field effect transistor (EGFET) urea microsensor based on modified polypyrrole (PPy) is reported for the quantitative detection of urea in aqueous solution. the EGFET urea sensor was made by integrating a small and cheap metal oxide semiconductor field - effect transistor (MOSFET) with a Au microelectrode modified with urease and pH sensitive PPy. First, the urease was added to a pyrrole solution and then pyrrole/urease solution was electropolymerized on the surface of gold microelectrode in galvostanic mode to produce a urea sensitive microelectrode. The microsensor was imaged using a stereo microscope to confirm the polymerization of pyrrole/urease. The EGFET urea microsensor was tested in deionized water containing various concentrations of urea. The electrode showed a linear response for a wide concentration range of urea from 10−9 to 10−5 M with a sensitivity of 35.5 mV/decade urea.

Design and manufacture of TNT explosives detector sensors based on GFET

Sensor Review ◽  
2018 ◽  
Vol 38 (2) ◽  
pp. 181-193 ◽  
Author(s):  
Saeid Masoumi ◽  
Hassan Hajghassem ◽  
Alireza Erfanian ◽  
Ahmad Molaei Rad
Keyword(s):  
Real Time ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Quantitative Detection ◽  
High Electron ◽  
Detection Range ◽  
Content Type ◽  
Investigation Methods ◽  
Effect Transistor ◽  
Design And Manufacture

Purpose Smart sensors based on graphene field effect transistor (GFET) and biological receptors are regarded as a promising nanomaterial that could be the basis for future generation of low-power, faster, selective real-time monitoring of target analytes and smaller electronics. So, the purpose of this paper is to provide details of sensors based on selective nanocoatings by combining trinitrotoluene (TNT) receptors (Trp-His-Trp) bound to conjugated polydiacetylene polymers on a graphene channel in GFET for detecting explosives TNT. Design/methodology/approach Following an introduction, this paper describes the way of manufacturing of the GFET sensor by using investigation methods for transferring graphene sheet from Cu foil to target substrates, which is functionalized by the TNT peptide receptors, to offer a system which has the capability of answering the presence of related target molecules (TNT). Finally, brief conclusions are drawn. Findings In a word, shortly after graphene discovery, it has been explored with a variety of methods gradually. Because of its exceptional electrical properties (e.g. extremely high carrier mobility and capacity), electrochemical properties such as high electron transfer rate and structural properties, graphene has already showed great potential and success in chemical and biological sensing fields. Therefore, the authors used a biological receptor with a field effect transistor (FET) based on graphene to fabricate sensor for achieving high sensitivity and selectivity that can detect explosive substances such as TNT. The transport property changed compared to that of the FET made by intrinsic graphene, that is, the Dirac point position moved from positive Vg to negative Vg, indicating the transition of graphene from p-type to n-type after annealing in TNT, and the results show the bipolar property change of GFET with the TNT concentration and the possibility to develop a robust, easy-to-use and low-cost TNT detection method for performing a sensitive, reliable and semi-quantitative detection in a wide detection range. Originality/value In this timeframe of history, TNT is a common explosive used in both military and industrial settings. Its convenient handling properties and explosive strength make it a common choice in military operations and bioterrorism. TNT and other conventional explosives are the mainstays of terrorist bombs and the anti-personnel mines that kill or injure more than 15,000 people annually in war-torn countries. In large, open-air environments, such as airports, train stations and minefields, concentrations of these explosives can be vanishingly small – a few parts of TNT, for instance, per trillion parts of air. That can make it impossible for conventional bomb and mine detectors to detect the explosives and save lives. So, in this paper, the authors report a potential solution with design and manufacture of a GFET sensor based on a biological receptor for real-time detection of TNT explosives specifically.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor
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