scholarly journals High-frequency thermoelectric response in correlated electronic systems

2011 ◽  
Vol 84 (3) ◽  
Author(s):  
Wenhu Xu ◽  
Cédric Weber ◽  
Gabriel Kotliar
Keyword(s):  
High Frequency ◽  
Electronic Systems

scholarly journals Reduction EMI of BLDC Motor Drive Based on Software Analysis

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Navid Mousavi ◽  
Tohid Rahimi ◽  
Homayoun Meshgin Kelk
Keyword(s):  
Leakage Current ◽  
High Frequency ◽  
Common Ground ◽  
Motor Drive ◽  
Electronic Systems ◽  
Bldc Motor ◽  
Leakage Currents ◽  
Software Analysis ◽  
Frequency Components ◽  
Motor Drive System

In the BLDC motor-drive system, the leakage current from a motor to a ground network and existence of high-frequency components of the DC link current are the most important factors that cause conducting interference. The leakage currents of the motors, flow through common ground, will interfere with other equipment because of the high density of electrical and electronic systems in the spacecraft and aircrafts. Moreover, generally there are common DC buses in the mentioned systems, which aggravate the problem. Function of the electric motor causes appearance of the high-frequency components in the DC link current, which can interfere with other subsystems. In this paper, the analysis of electromagnetic noise and presentation of the proposed method based on the frequency spectrum of the DC link current and the leakage current from the motor to the ground network are done. The proposed method presents a new process based on the filtering method to overcome EMI. To cover the requirement analysis, the Maxwell software is used.

scholarly journals Comparison of GAN, SIC, SI Technology for High Frequency and High Efficiency Inverters

2020 ◽  
Vol 184 ◽  
pp. 01012
Author(s):  
Sai Kiran Pullabhatla ◽  
Phaneendra Babu Bobba ◽  
Satyavani Yadlapalli
Keyword(s):  
Output Power ◽  
Electron Mobility ◽  
High Frequency ◽  
Power Efficiency ◽  
High Efficiency ◽  
High Electron Mobility Transistor ◽  
Electronic Systems ◽  
High Electron ◽  
Power Semiconductor ◽  
Efficient Power

Power semiconductor devices plays a major role in efficient power conversion. As we have Silicon (Si), Silicon Carbide (SiC) and Gallium Nitride (GaN) based power devices, GaN technologies are ideal for working in high frequency power electronic systems (in MHz). Because the GaN has superior electron mobility and bandgap than the SiC and Si it has superior characteristics like low conduction losses, high switching rate so that there is better power efficiency than SiC, Si based inverter. Here we are using the Gan based High-Electron-Mobility Transistor (HEMT) and SiC and Si based mosfet in the inverter. The proposed inverter of different topologies is designed to transfer the power at >1MHz range. Comparison of the three different switches is done by the output power and the efficiency of the inverter. This paper presents the SPICE simulation results of the class d and class e inverter of output power 1KW.

scholarly journals Experimental study of the behaviour of the crosstalk of shielded or untwisted-pair cables in high frequency

2019 ◽  
Vol 16 (3) ◽  
pp. 311-324
Author(s):  
Benazza Baghdadi ◽  
Bendaoud Abdelber ◽  
Reineix Alain ◽  
Dafif Omar ◽  
Slimani Helima
Keyword(s):  
Experimental Study ◽  
Case Studies ◽  
High Frequency ◽  
Complete System ◽  
Electronic Systems ◽  
Natural Phenomena ◽  
Industrial Activity ◽  
Common Mode ◽  
Network Analyser ◽  
Electromagnetic Disturbances

Electromagnetic disturbances from natural phenomena such as lightning, or those generated from industrial activity, can cause harmful interference in onboard electronic systems. The disturbances are generally transformed into radiated and conducted disturbances, using wired connections to spread their effects in electrical and electronic systems. In order to identify the paths of propagation and coupling of these HF currents into a complete system and propose solutions to reduce EMC interference, it is necessary and important to carry out experimental case studies on the coupling between shielded as well as unarmoured cables, in order to identify the importance of differential and common-mode currents. Measurements were made using a 4-way vector network analyser giving the results of the crosstalk between victim and culprit cables as well as for module and phase.

A Method of Full Digital Clock Generation with Adjustable Frequency and Phase

2014 ◽  
Vol 599-601 ◽  
pp. 703-706
Author(s):  
Yan Nian Lou ◽  
Zhong He Jin ◽  
Chao Jie Zhang
Keyword(s):  
High Frequency ◽  
The Other ◽  
Electronic Systems ◽  
Clock Generation ◽  
Digital Clock ◽  
On Line ◽  
The Stability ◽  
Fundamental Requirement ◽  
Better Than

In modern electronic systems, a reliable clock with precise frequency is a fundamental requirement. Moreover, the frequency and phase of the clock needs to be adjustable in some situations. So a method of full digital clock generation is proposed in this paper. Compared with other methods, it has two advantages: one is the capability of adjusting the frequency and phase on-line; the other is the high frequency precision. Experiment results show that this method can generate clock at 19.0484MHz, 19.0485MHz, 19.0486MHz with controlled phases, and the stability within 90 seconds is better than 0.05Hz.

scholarly journals Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1159
Author(s):  
Lung-Hsing Hsu ◽  
Yung-Yu Lai ◽  
Po-Tsung Tu ◽  
Catherine Langpoklakpam ◽  
Ya-Ting Chang ◽  
...  
Keyword(s):  
High Frequency ◽  
Defect Density ◽  
Silicon On Insulator ◽  
Current Status ◽  
Electronic Systems ◽  
Gan Hemt ◽  
Direct Growth ◽  
Engineered Substrates ◽  
Gan On Si ◽  
The Cost

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches between GaN and Si. In this article, we will review the current status of GaN on Si in terms of epitaxy and device performances in high frequency and high-power applications. Recently, different substrate structures including silicon-on-insulator (SOI) and engineered poly-AlN (QST®) are introduced to enhance the epitaxy quality by reducing the mismatches. We will discuss the development and potential benefit of these novel substrates. Moreover, SOI may provide a path to enable the integration of GaN with Si CMOS. Finally, the recent development of 3D hetero-integration technology to combine GaN technology and CMOS is also illustrated.

THE EFFECTS OF SPACE RADIATION EXPOSURE ON POWER MOSFETS: A REVIEW

2004 ◽  
Vol 14 (02) ◽  
pp. 445-463 ◽  
Author(s):  
K. SHENAI ◽  
K.F. GALLOWAY ◽  
R.D. SCHRIMPF
Keyword(s):  
Radiation Exposure ◽  
High Frequency ◽  
Space Radiation ◽  
Radiation Environment ◽  
Electronic Systems ◽  
Future Trends ◽  
Frequency Limit ◽  
Control Applications ◽  
Power Mosfets ◽  
Space Radiation Environment

Power MOSFETs are a commonly used device for many switching and power control applications. Their upper frequency limit spans a fairly broad range, from 1 MHz to 10 MHz. These devices are frequently used in spaceborne electronic systems where they encounter radiation exposure during operation. This paper reviews the current technology, its high frequency capability, the future trends for power MOSFET technology, and the degradation that the power VDMOS technology experiences in the space radiation environment.

scholarly journals Analysis of the electromagnetic environment in an extensive railway area

2018 ◽  
Vol 67 (1) ◽  
pp. 55-64 ◽  
Author(s):  
Kamil Białek ◽  
Jacek Paś
Keyword(s):  
Electromagnetic Field ◽  
Electromagnetic Interference ◽  
High Frequency ◽  
Electronic Devices ◽  
Capacitive Coupling ◽  
Electronic Systems ◽  
Electromagnetic Environment ◽  
Frequency Spectra ◽  
Electric And Magnetic Fields ◽  
The Impact

The paper presents the results of testing the electric and magnetic fields across a wide frequency spectrum as unintentionally generated in an extensive railway area. High levels of electromagnetic interference generated in a railway area can cause the malfunction of electrical and electronic devices. The paper presents an electromagnetic environment in the low and high frequency spectra that prevail in an extensive railway area. Special attention was paid to the impact of electromagnetic interference on specific electronic systems. Keywords: electromagnetic field, spectrum, interference, induction and capacitive coupling

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