X-ray diffracted intensity for double-reflection channel-cut Ge monochromators at extremely asymmetric diffraction conditions

2011 ◽  
Vol 44 (2) ◽  
pp. 353-358 ◽  
Author(s):  
Claudio Ferrari ◽  
Fabrizio Germini ◽  
Dusan Korytár ◽  
Petr Mikulík ◽  
Luca Peverini
Keyword(s):  
Critical Angle ◽  
Crystal Surface ◽  
Total External Reflection ◽  
Double Diffraction ◽  
Bragg Condition ◽  
X Ray Diffraction ◽  
Diffraction Profile ◽  
X Ray ◽  
Integrated Intensity ◽  
Incidence Condition

The width and integrated intensity of the 220 X-ray double-diffraction profile and the shift of the Bragg condition due to refraction have been measured in a channel-cut Ge crystal in an angular range near the critical angle of total external reflection. The Bragg angle and incidence condition were varied by changing the X-ray energy. In agreement with the extended dynamical theory of X-ray diffraction, the integrated intensity of the double diffraction remained almost constant, even for the grazing-incidence condition very close to the critical angle for total external reflection. A broadening of the diffraction profile not predicted by the extended theory of X-ray diffraction was observed when the Bragg condition was at angles of incidence lower than 0.6°. Plane wave topographs revealed a contrast that could be explained by a slight residual crystal surface undulation of 0.3° due to etching to remove the cutting damage and the increasing effect of refraction at glancing angles close to the critical angle. These findings confirm that highly asymmetric channel-cut Ge crystals can also work as efficient monochromators or image magnifiers at glancing angles close to the critical angle, the main limitation being the crystal surface preparation.

X-Ray Diffraction Contrast from Impurity Precipitates in CdS Single Crystals

1966 ◽  
Vol 10 ◽  
pp. 153-158 ◽  
Author(s):  
Jun-ichi Chikawa
Keyword(s):  
Strain Field ◽  
Crystal Surface ◽  
Bragg Angle ◽  
X Rays ◽  
Bragg Condition ◽  
X Ray Diffraction ◽  
Crystal Surfaces ◽  
X Ray ◽  
Impurity Doped ◽  
Free Plane

AbstractImpurity-doped crystals CdS(GaGl3) have been studied by X-ray topography. Some large precipitates are formed close to the crystal surfaces by annealing at 300°C. In the symmetrical Laue case, the precipitates show circular images (30-60 μ in diameter) due to the radial strains around the precipitates which consist of two semicircles separated by a contrast-free plane parallel to the reflecting plane. The observations indicate that the strain field between the crystal surface and precipitate is not responsible for the contrast, and that the images are formed by X-rays which are deviated from the Bragg condition for the perfect region and satisfy the Bragg condition in the strain field on the inside of the precipitate. One of the semicircles is formed by the incident X-rays with larger glancing angles than the Bragg angle and the other with smaller ones. It is concluded that this contrast is due to the strain around a convex lens shaped precipitate.

Diffraction Effects from Irradiated Aluminum Single Crystals*

1962 ◽  
Vol 6 ◽  
pp. 164-171
Author(s):  
H. E. Kissinger
Keyword(s):  
Single Crystals ◽  
Crystal Surface ◽  
Irradiation Damage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Integrated Intensity ◽  
Diffraction Effects ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Trapping Sites

AbstractThe effect of substructural perfection on the accumulation of irradiation damage in aluminum was examined. Large single crystals with extensive substructure and crystals essentially free of substructure, all with faces cut parallel to crystal planes, were subjected to neutron irradiation. Subsequent examination by X-ray diffraction revealed pronounced changes in integrated intensity and Debye-Waller temperature factor for the substructure-free crystals; these effects disappeared upon re-etching of the surface. Laue photographs showed that the normal single-crystal pattern was partially obscured by a polycrystalline effect which also disappeared upon etching. Crystals with extensive substructure showed no such effects.This diffraction evidence supports the view that irradiation-induced defects in aluminum migrate to and collect at the crystal surface if no internal trapping sites exist.

A Dynamical Theory Approach to the Berg-Barrett Technique

1968 ◽  
Vol 12 ◽  
pp. 139-150 ◽  
Author(s):  
B. Roessler ◽  
R.W. Armstrong
Keyword(s):  
Boundary Conditions ◽  
Crystal Surface ◽  
Incident Beam ◽  
Dynamical Theory ◽  
Theory Approach ◽  
Angular Range ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Integrated Intensity

AbstractCrystals with a dislocation density low enough so that individual dislocations can be resolved by X-ray diffraction contrast techniques should be regarded as highly perfect crystals. A complete description of the diffraction process, therefore, requires the approach of the dynamical theory of X-ray diffraction. In the Berg-Barrett arrangement each point on the crystal surface integrates the incident X-ray intensity over the angular range received from the X-ray source. For most experimental arrangements this range is about 1/2 degree and corresponds, therefore, to integrating over the entire range of reflection of the crystal, which is of the order of a minute or so of arc. The Berg-Barrett image is a recording of a localized integrated intensity, integrated over the complete range of incident angles. We consider as essential, however, primarily the range of total reflection, since it makes the major contribution to the integrated intensity.The dynamical theory shows that the details of the diffraction process depend very strikingly on the boundary ocnditions at the crystal surface through two angles of incidence - one between the incident beam and the crystal surface, the other between the incident beam and the diffracting plane of atoms. Calculations of the parameters of the dynamical theory which describe the diffraction process in the Berg-Barrett arrangement show that the description depends very strongly on the details of the specific boundary conditions employed. In particular, two parameters seem especially important in dislocation image formation: 1) ΔθR, the angular range of the exit beam diffracted from the crystal, which we call the range of total rejection to distinguish It from ΔθA, the angular range over which the entrance beam is totally accepted, and 2) σe, the extinction coefficient, the parameter which describes the X-ray penetration depth. Both parameters are extremely sensitive to the specific boundary conditions employed.This dynamical theory approach suggests that, by suitable choice of the experimental conditions, the boundary conditions can be advantageously adjusted so that satisfactory Berg-Barrett images can be obtained.

scholarly journals Structural and Enhanced Optical Properties of Stabilized γ‒Bi2O3 Nanoparticles: Effect of Oxygen Ion Vacancies

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1023 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu
Keyword(s):  
Room Temperature ◽  
Excess Oxygen ◽  
Ambient Atmosphere ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Band Emission ◽  
Oxygen Ion ◽  
Integrated Intensity ◽  
Effect Of Oxygen

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

X-Ray Diffraction Profile Analysis for Characterizing Isothermal Aging Behavior of M250 Grade Maraging Steel

2008 ◽  
Vol 39 (8) ◽  
pp. 1978-1984 ◽  
Author(s):  
S. Mahadevan ◽  
T. Jayakumar ◽  
B.P.C. Rao ◽  
Anish Kumar ◽  
K.V. Rajkumar ◽  
...  
Keyword(s):  
Maraging Steel ◽  
Isothermal Aging ◽  
Profile Analysis ◽  
X Ray Diffraction ◽  
Aging Behavior ◽  
Diffraction Profile ◽  
X Ray

scholarly journals Исследование этапов превращения кремния в карбид кремния в процессе атомного замещения методами полного внешнего отражения рентгеновских лучей и рентгеновской дифрактомерии

2022 ◽  
Vol 64 (3) ◽  
pp. 326
Author(s):  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Е.В. Осипова ◽  
В.М. Стожаров
Keyword(s):  
Structural Quality ◽  
Total External Reflection ◽  
X Rays ◽  
Reflection Method ◽  
X Ray Diffraction ◽  
Modified Technique ◽  
Substitution Method ◽  
X Ray ◽  
Sic Films

X-ray diffraction and total external reflection of X-rays (X-ray reflectometry) methods were used to study the successive stages of synthesis of epitaxial SiC films on Si (100) X-ray diffraction and total external X-ray reflection (XRD) methods were used to study successive stages of synthesis of epitaxial SiC films on Si (100) surfaces, (110) and (111) surfaces by the atom substitution method. The data on the transformation evolution of (100) surfaces were studied, (110) and (111) Si, into SiC surfaces. A comparative analysis of the X-ray structural quality of the SiC layers grown on Si by the atom substitution method with the quality of SiC layers grown by Advanced Epi by the standard CVD method. A modified technique for the total outer X-ray reflection method, based on measurements of the intensity of the reflected X-rays using a special parabolic mirror. It is shown that the method of total external reflection method makes it possible to obtain important information about the degree of surface roughness of SiC layers, the evolution of their crystal structure and plasmon energy in the process of Si to SiC conversion.

scholarly journals TEM Study of High-Temperature Precipitation of Delta Phase in Inconel 718 Alloy

2011 ◽  
Vol 2011 ◽  
pp. 1-9 ◽  
Author(s):  
Moukrane Dehmas ◽  
Jacques Lacaze ◽  
Aliou Niang ◽  
Bernard Viguier
Keyword(s):  
Inconel 718 ◽  
Volume Fraction ◽  
Alloy 718 ◽  
Double Diffraction ◽  
X Ray Diffraction ◽  
Inconel 718 Alloy ◽  
X Ray ◽  
Delta Phase ◽  
Transmission Electron ◽  
Matrix Free

Inconel 718 is widely used because of its ability to retain strength at up to 650∘C for long periods of time through coherent metastable Ni3Nb precipitation associated with a smaller volume fraction of Ni3Al precipitates. At very long ageing times at service temperature, decomposes to the stable Ni3Nb phase. This latter phase is also present above the solvus and is used for grain control during forging of alloy 718. While most works available on precipitation have been performed at temperatures below the solvus, it appeared of interest to also investigate the case where phase precipitates directly from the fcc matrix free of precipitates. This was studied by X-ray diffraction and transmission electron microscopy (TEM). TEM observations confirmed the presence of rotation-ordered domains in plates, and some unexpected contrast could be explained by double diffraction due to overlapping phases.

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