scholarly journals Single-shot experiments at the soft X-FEL FERMI using a back-side-illuminated scientific CMOS detector

2022 ◽  
Vol 29 (1) ◽  
Author(s):  
Cyril Léveillé ◽  
Kewin Desjardins ◽  
Horia Popescu ◽  
Boris Vondungbo ◽  
Marcel Hennes ◽  
...  
Keyword(s):  
Dynamic Range ◽  
Extreme Ultraviolet ◽  
Frame Rate ◽  
Oxide Semiconductor ◽  
Magnetic Scattering ◽  
Single Shot ◽  
Back Side ◽  
Image Size ◽  
Large Area ◽  
X Ray

The latest Complementary Metal Oxide Semiconductor (CMOS) 2D sensors now rival the performance of state-of-the-art photon detectors for optical application, combining a high-frame-rate speed with a wide dynamic range. While the advent of high-repetition-rate hard X-ray free-electron lasers (FELs) has boosted the development of complex large-area fast CCD detectors in the extreme ultraviolet (EUV) and soft X-ray domains, scientists lacked such high-performance 2D detectors, principally due to the very poor efficiency limited by the sensor processing. Recently, a new generation of large back-side-illuminated scientific CMOS sensors (CMOS-BSI) has been developed and commercialized. One of these cost-efficient and competitive sensors, the GSENSE400BSI, has been implemented and characterized, and the proof of concept has been carried out at a synchrotron or laser-based X-ray source. In this article, we explore the feasibility of single-shot ultra-fast experiments at FEL sources operating in the EUV/soft X-ray regime with an AXIS-SXR camera equipped with the GSENSE400BSI-TVISB sensor. We illustrate the detector capabilities by performing a soft X-ray magnetic scattering experiment at the DiProi end-station of the FERMI FEL. These measurements show the possibility of integrating this camera for collecting single-shot images at the 50 Hz operation mode of FERMI with a cropped image size of 700 × 700 pixels. The efficiency of the sensor at a working photon energy of 58 eV and the linearity over the large FEL intensity have been verified. Moreover, on-the-fly time-resolved single-shot X-ray resonant magnetic scattering imaging from prototype Co/Pt multilayer films has been carried out with a time collection gain of 30 compared to the classical start-and-stop acquisition method performed with the conventional CCD-BSI detector available at the end-station.

scholarly journals Development of a shutterless continuous rotation method using an X-ray CMOS detector for protein crystallography

2009 ◽  
Vol 42 (6) ◽  
pp. 1165-1175 ◽  
Author(s):  
Kazuya Hasegawa ◽  
Kunio Hirata ◽  
Tetsuya Shimizu ◽  
Nobutaka Shimizu ◽  
Takaaki Hikima ◽  
...  
Keyword(s):  
Data Collection ◽  
Dynamic Range ◽  
Protein Structures ◽  
Protein Crystallography ◽  
New Method ◽  
Oxide Semiconductor ◽  
X Ray ◽  
Rotation Method ◽  
Continuous Rotation ◽  
Wide Range

A new shutterless continuous rotation method using an X-ray complementary metal-oxide semiconductor (CMOS) detector has been developed for high-speed, precise data collection in protein crystallography. The principle of operation and the basic performance of the X-ray CMOS detector (Hamamatsu Photonics KK C10158DK) have been shown to be appropriate to the shutterless continuous rotation method. The data quality of the continuous rotation method is comparable to that of the conventional oscillation method using a CCD detector and, furthermore, the combination with fine φ slicing improves the data accuracy without increasing the data-collection time. The new method is more sensitive to diffraction intensity because of the narrow dynamic range of the CMOS detector. However, the strong diffraction spots were found to be precisely measured by recording them on successive multiple images by selecting an adequate rotation step. The new method has been used to successfully determine three protein structures by multi- and single-wavelength anomalous diffraction phasing and has thereby been proved applicable in protein crystallography. The apparatus and method may become a powerful tool at synchrotron protein crystallography beamlines with important potential across a wide range of X-ray wavelengths.

ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW

2005 ◽  
Vol 04 (03) ◽  
pp. 269-286 ◽  
Author(s):  
F. WATT ◽  
A. A. BETTIOL ◽  
J. A. VAN KAN ◽  
E. J. TEO ◽  
M. B. H. BREESE
Keyword(s):  
Mass Production ◽  
Large Scale ◽  
Focused Ion Beam ◽  
Extreme Ultraviolet ◽  
Ion Beam ◽  
Large Area ◽  
Near Surface ◽  
X Ray ◽  
Projection Lithography ◽  
New Generation

To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing and EUV/X-ray lithography). IPL follows the traditional lines of lithography, utilizing large area masks through which a pattern is replicated in resist material which can be used to modify the near-surface properties. In IPL, the complete absence of diffraction effects coupled with ability to tailor the depth of ion penetration to suit the resist thickness or the depth of modification are prime characteristics of this technique, as is the ability to pattern a large area in a single brief irradiation exposure without any wet processing steps. p-beam writing and FIB are direct write (maskless) processes, which for a long time have been considered too slow for mass production. However, these two techniques may have some distinct advantages when used in combination with nanoimprinting and pattern transfer. FIB can produce master stamps in any material, and p-beam writing is ideal for producing three-dimensional high-aspect ratio metallic stamps of precise geometry. The transfer of large scale patterns using nanoimprinting represents a technique of high potential for the mass production of a new generation of high area, high density, low dimensional structures. Finally a cross section of applications are chosen to demonstrate the potential of these new generation ion beam nanolithographies.

scholarly journals A multi-MHz single-shot data acquisition scheme with high dynamic range: pump–probe X-ray experiments at synchrotrons

2016 ◽  
Vol 23 (6) ◽  
pp. 1409-1423 ◽  
Author(s):  
Alexander Britz ◽  
Tadesse A. Assefa ◽  
Andreas Galler ◽  
Wojciech Gawelda ◽  
Michael Diez ◽  
...  
Keyword(s):  
Data Acquisition ◽  
Dynamic Range ◽  
Avalanche Photodiode ◽  
Fluorescence Yield ◽  
Laser Source ◽  
Single Shot ◽  
Pump Probe ◽  
X Ray ◽  
Acquisition Scheme ◽  
Data Point

The technical implementation of a multi-MHz data acquisition scheme for laser–X-ray pump–probe experiments with pulse limited temporal resolution (100 ps) is presented. Such techniques are very attractive to benefit from the high-repetition rates of X-ray pulses delivered from advanced synchrotron radiation sources. Exploiting a synchronized 3.9 MHz laser excitation source, experiments in 60-bunch mode (7.8 MHz) at beamline P01 of the PETRA III storage ring are performed. Hereby molecular systems in liquid solutions are excited by the pulsed laser source and the total X-ray fluorescence yield (TFY) from the sample is recorded using silicon avalanche photodiode detectors (APDs). The subsequent digitizer card samples the APD signal traces in 0.5 ns steps with 12-bit resolution. These traces are then processed to deliver an integrated value for each recorded single X-ray pulse intensity and sorted into bins according to whether the laser excited the sample or not. For each subgroup the recorded single-shot values are averaged over ∼107 pulses to deliver a mean TFY value with its standard error for each data point,e.g.at a given X-ray probe energy. The sensitivity reaches down to the shot-noise limit, and signal-to-noise ratios approaching 1000 are achievable in only a few seconds collection time per data point. The dynamic range covers 100 photons pulse−1and is only technically limited by the utilized APD.

scholarly journals Time-resolved ionization measurements with intense ultrashort XUV and X-ray free-electron laser pulses

2019 ◽  
Vol 37 (2) ◽  
pp. 235-241 ◽  
Author(s):  
Victor Tkachenko ◽  
Martin Büscher ◽  
Hauke Höppner ◽  
Nikita Medvedev ◽  
Vladimir Lipp ◽  
...  
Keyword(s):  
Free Electron ◽  
Impact Ionization ◽  
Extreme Ultraviolet ◽  
Laser Pulses ◽  
Index Of Refraction ◽  
Single Shot ◽  
Monte Carlo Code ◽  
Thermal Transitions ◽  
Time Jitter ◽  
X Ray

AbstractModern free-electron lasers (FEL) operating in XUV (extreme ultraviolet) or X-ray range allow an access to novel research areas. An example is the ultrafast ionization of a solid by an intense femtosecond FEL pulse in XUV which consequently leads to a change of the complex index of refraction on an ultrashort timescale. The photoionization and subsequent impact ionization resulting in electronic and atomic dynamics are modeled with our hybrid code XTANT(X-ray thermal and non-thermal transitions) and a Monte Carlo code XCASCADE(X-ray-induced electron cascades). The simulations predict the temporal kinetics of FEL-induced electron cascades and thus yield temporally and spatially resolved information on the induced changes of the optical properties. In a series of experiments at FERMI and LCLS, single shot measurements with spatio-temporal encoding of the ionization process have been performed by a correlation of the FEL pump pulse with an optical femtosecond probe pulse. An excellent agreement between the experiment and the simulation has been found. We also show that such kind of experiments forms the basis for pulse duration and arrival time jitter monitoring as currently under development for XUV-FELs.

Versatile Lithium Fluoride Luminescent Detectors for High Resolution Imaging Applications from Extreme Ultraviolet to Soft and Hard X-Rays

2016 ◽  
Vol 98 ◽  
pp. 54-63
Author(s):  
Francesca Bonfigli ◽  
Enrico Nichelatti ◽  
Maria Aurora Vincenti ◽  
Rosa Maria Montereali
Keyword(s):  
Spatial Resolution ◽  
Lithium Fluoride ◽  
Dynamic Range ◽  
High Spatial Resolution ◽  
Extreme Ultraviolet ◽  
Large Field ◽  
X Rays ◽  
X Ray ◽  
Research Fields ◽  
X Ray Imaging

X-ray imaging represents a very relevant tool in basic and applied research fields due to the possibility of performing non-destructive investigations with high spatial resolution. We present innovative X-ray imaging detectors based on visible photoluminescence from aggregate electronic defects locally created in lithium fluoride (LiF) during irradiation. Among the peculiarities of these detectors, noteworthy ones are their very high spatial resolution (intrinsic ∼2 nm, standard ∼300 nm) across a large field of view (>10 cm2), wide dynamic range (>103) and their insensitivity to ambient light. The material photoluminescence response can be enhanced through the proper choice of reflecting substrates and multi-layer designs in the case of LiF films. The present investigation deals with the most appealing X-ray imaging applications, from simple lensless imaging configurations with commonly-available laboratory polychromatic X-ray sources to X-ray imaging-dedicated synchrotron beamlines in absorption and phase contrast experiments.

scholarly journals The free-electron laser FLASH

2015 ◽  
Vol 3 ◽  
Author(s):  
Siegfried Schreiber ◽  
Bart Faatz
Keyword(s):  
Free Electron ◽  
Free Electron Laser ◽  
Extreme Ultraviolet ◽  
Laser Flash ◽  
Single Shot ◽  
Short Pulses ◽  
X Ray ◽  
Pump And Probe ◽  
User Facility ◽  
Diffraction Imaging

FLASH at DESY, Hamburg, Germany is the first free-electron laser (FEL) operating in the extreme ultraviolet (EUV) and soft x-ray wavelength range. FLASH is a user facility providing femtosecond short pulses with an unprecedented peak and average brilliance, opening new scientific opportunities in many disciplines. The first call for user experiments has been launched in 2005. The FLASH linear accelerator is based on TESLA superconducting technology, providing several thousands of photon pulses per second to user experiments. Probing femtosecond-scale dynamics in atomic and molecular reactions using, for instance, a combination of x-ray and optical pulses in a pump and probe arrangement, as well as single-shot diffraction imaging of biological objects and molecules, are typical experiments performed at the facility. We give an overview of the FLASH facility, and describe the basic principles of the accelerator. Recently, FLASH has been extended by a second undulator beamline (FLASH2) operated in parallel to the first beamline, extending the capacity of the facility by a factor of two.

scholarly journals A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 486
Author(s):  
Ken Miyauchi ◽  
Kazuya Mori ◽  
Toshinori Otaka ◽  
Toshiyuki Isozaki ◽  
Naoto Yasuda ◽  
...  
Keyword(s):  
Dynamic Range ◽  
High Sensitivity ◽  
Cmos Image Sensor ◽  
Light Sensitivity ◽  
Image Sensor ◽  
Motion Artifacts ◽  
Oxide Semiconductor ◽  
Storage Capacitor ◽  
Cmos Process ◽  
Back Side

A backside-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor with 4.0 μm voltage domain global shutter (GS) pixels has been fabricated in a 45 nm/65 nm stacked CMOS process as a proof-of-concept vehicle. The pixel components for the photon-to-voltage conversion are formed on the top substrate (the first layer). Each voltage signal from the first layer pixel is stored in the sample-and-hold capacitors on the bottom substrate (the second layer) via micro-bump interconnection to achieve a voltage domain GS function. The two sets of voltage domain storage capacitor per pixel enable a multiple gain readout to realize single exposure high dynamic range (SEHDR) in the GS operation. As a result, an 80dB SEHDR GS operation without rolling shutter distortions and motion artifacts has been achieved. Additionally, less than −140dB parasitic light sensitivity, small noise floor, high sensitivity and good angular response have been achieved.

Recrystallization Investigated by X- Ray Diffraction Imaging

2007 ◽  
Vol 550 ◽  
pp. 631-636 ◽  
Author(s):  
Thomas Wroblewski ◽  
Adeline Buffet
Keyword(s):  
Nucleation And Growth ◽  
Single Shot ◽  
X Ray Diffraction ◽  
Growth Behaviour ◽  
Large Area ◽  
Polycrystalline Specimen ◽  
X Ray ◽  
Classical Models ◽  
Diffraction Imaging ◽  
Cold Rolled

X-ray diffraction imaging allows the investigation of a large area of a polycrystalline specimen in a single shot. Dynamic processes like recystallization can, therefore, be studied without prior knowledge of where they occur. Even early stages of nucleation can be traced back using the information from images taken from the fully recrystallized specimen. Experiments performed at HASYLAB beamline G3 on cold rolled Cu and Al showed nucleation and growth behaviour that cannot be explained by classical models.

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