Oxidation kinetics of nanocrystalline Al thin films

2019 ◽  
Vol 66 (5) ◽  
pp. 638-643
Author(s):  
Jinsong Luo ◽  
Ligong Zhang ◽  
Haigui Yang ◽  
Nan Zhang ◽  
Yongfu Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Grain Boundary ◽  
Film Thickness ◽  
Silicon Substrate ◽  
Oxidation Kinetics ◽  
Oxidation Rate ◽  
Boundary Diffusion ◽  
Content Type ◽  
Kinetics Of

Purpose This paper aims to study the oxidation kinetics of the nanocrystalline Al ultrathin films. The influence of structure and composition evolution during thermal oxidation will be observed. The reason for the change in the oxidation activation energy on increasing the oxidation temperature will be discussed. Design/methodology/approach Al thin films are deposited on the silicon wafers as substrates by vacuumed thermal evaporation under the base pressure of 2 × 10−4 Pa, where the substrates are not heated. A crystalline quartz sensor is used to monitor the film thickness. The film thickness varies in the range from 30 to 100 nm. To keep the silicon substrate from oxidation during thermal oxidation of the Al film, a 50-nm gold film was deposited on the back side of silicon substrate. Isothermal oxidation studies of the Al film were carried out in air to assess the oxidation kinetics at 400-600°C. Findings The activation energy is positive and low for the low temperature oxidation, but it becomes apparently negative at higher temperatures. The oxide grains are nano-sized, and γ-Al2O3 crystals are formed at above 500°C. In light of the model by Davies, the grain boundary diffusion is believed to be the reason for the logarithmic oxidation rate rule. The negative activation energy at higher temperatures is apparent, which comes from the decline of diffusion paths due to the formation of the γ-Al2O3 crystals. Originality/value It is found that the oxidation kinetics of nanocrystalline Al thin films in air at 400-600°C follows the logarithmic law, and this logarithmic oxidation rate law is related to the grain boundary diffusion. The negative activation energies in the higher temperature range can be attributed to the formation of γ-Al2O3 crystal.

Kinetics of Cu Segregation in Al-Cu(1at% Cu) Interconnects Studied by Resistance Measurements

1997 ◽  
Vol 473 ◽  
Author(s):  
A. J. Kalkman ◽  
A. H. Verbruggen ◽  
G. C. A. M. Janssen ◽  
S. Radelaar
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Grain Boundary ◽  
Room Temperature ◽  
Boundary Diffusion ◽  
Measurement Temperature ◽  
Temperature Range ◽  
Different Temperatures ◽  
Resistance Decrease ◽  
Kinetics Of

ABSTRACTThe time-dependence of the growth of Al2Cu precipitates in Al-Cu(lat% Cu) thin films is studied by means of resistance measurements at different temperatures. The samples are annealed at 400°C for 1 hour, and then quickly cooled down to room temperature. Afterwards, the samples are heated within one minute to a measurement temperature between 140 °C and 240 °C. Growth of precipitates causes a well defined decrease in resistance. The observed resistance decrease does not follow an exponential decay. In the investigated temperature range the resistance decrease can be accurately modelled by (R(t)-R∞) = (Ro-R∞)exp(-(t /τ)n), with the time constant τ= τ0 exp(Ea / kT). Excellent fits were obtained resulting in n = 0.66±0.05, independent of temperature, and Ea= 0.81±0.03 eV. This value for the activation energy agrees very well with the activation energy that has been reported in literature for both electromigration failure in Al-Cu and grain-boundary diffusion of Cu in Al. The value we found for n is intriguingly close to 2/3 and deviates strongly from the values of n reported for bulk Al-Cu (n = 1.5–1.8) in the same temperature range.

An Auger Electron Spectroscopic Study of the Diffusion of Sulfur and Carbon in α-Iron

1977 ◽  
Vol 31 (3) ◽  
pp. 210-213 ◽  
Author(s):  
W. E. Swartz ◽  
D. M. Holloway
Keyword(s):  
Activation Energy ◽  
Grain Boundary ◽  
Diffusion Process ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Boundary Diffusion ◽  
Carbon Migration ◽  
Sulfur Diffusion ◽  
Kinetics Of ◽  
Arrhenius Analysis

Auger electron spectroscopy has been employed to study the diffusion of sulfur and carbon in α-iron. In the temperature range 25 to 500°C carbon preferentially segregates to the surface. From 400 to 700°C sulfur segregates to the surface while carbon is thermally desorbed. An Arrhenius analysis of the sulfur diffusion data yields an activation energy of 14.5 kcal/mol, which is consistent with a grain boundary diffusion process. The kinetics of carbon migration is complicated by the thermal desorption which makes Arrhenius analysis impossible.

Grain Boundary Diffusion in Co/Cu and Co/Cr Magnetic Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
John G. Holl-Pellerin ◽  
S.G.H. Anderson ◽  
P.S. Ho ◽  
K.R. Coffey ◽  
J.K. Howard ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Photoelectron Spectroscopy ◽  
Boundary Diffusion ◽  
Magnetic Thin Films ◽  
Grain Boundary Diffusion ◽  
X Ray ◽  
Before And After

ABSTRACTX-ray photoelectron spectroscopy (XPS) has been used to investigate grain boundary diffusion of Cu and Cr through 1000 Å thick Co films in the temperature range of 325°C to 400°C. Grain boundary diffusivities were determined by modeling the accumulation of Cu or Cr on Co surfaces as a function of time at fixed annealing temperature. The grain boundary diffusivity of Cu through Co is characterized by a diffusion coefficient, D0gb, of 2 × 104 cm2/sec and an activation energy, Ea,gb, of 2.4 eV. Similarly, Cr grain boundary diffusion through Co thin films occurs with a diffusion coefficient, Do,gb, of 6 × 10-2cm2/sec and an activation energy, Ea,gb of 1.8 eV. The Co film microstructure has been investigated before and after annealing by x-ray diffraction and transmission electron Microscopy. Extensive grain growth and texturing of the film occurred during annealing for Co deposited on a Cu underlayer. In contrast, the microstructure of Co deposited on a Cr underlayer remained relatively unchanged upon annealing. Magnetometer Measurements have shown that increased in-plane coercivity Hc, reduced remanence squareness S, and reduced coercive squareness S* result from grain boundary diffusion of Cu and Cr into the Co films.

Microstructures evolution and growth kinetics of intermetallic compounds in Cu/Sn/Cu system during ultrasonic soldering process

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Xu Han ◽  
Xiaoyan Li ◽  
Peng Yao
Keyword(s):  
Grain Boundary ◽  
Microstructural Evolution ◽  
Growth Kinetics ◽  
Boundary Diffusion ◽  
Solder Joints ◽  
Content Type ◽  
Soldering Process ◽  
Different Temperatures ◽  
Ultrasonic Soldering ◽  
Kinetics Of

Purpose This study aims to investigate the effect of ultrasound on interfacial microstructures and growth kinetics of intermetallic compounds (IMCs) at different temperatures. Design/methodology/approach To investigate the effect of ultrasound on IMCs growth quantitatively, the cross-sectional area of IMCs layers over a confirmed length was obtained for calculating the thickness of the IMCs layer. Findings The generation of dimensional difference in normal direction between Cu6Sn5 and its adjacent Cu6Sn5, formation of bossed Cu6Sn5 and non-interfacial Cu6Sn5 in ultrasonic solder joints made the interfacial Cu6Sn5 layer present a non-scallop-like morphology different from that of traditional solder joints. At 260°C and 290°C, the Cu3Sn layer presented a wave-like shape. In contrast, at 320°C, the Cu3Sn in ultrasonic solder joints consisted of non-interfacial Cu3Sn and interfacial Cu3Sn with a branch-like shape. The Cu6Sn5/Cu3Sn boundary and Cu3Sn/Cu interface presented a sawtooth-like shape under the effect of ultrasound. The predominant mechanism of ultrasonic-assisted growth of Cu6Sn5 growth at 260°C, 290°C and 320°C involved the grain boundary diffusion accompanied by grain coarsening. The Cu3Sn growth was controlled by volume diffusion during the ultrasonic soldering process at 260°C and 290°C. The diffusion mechanism of Cu3Sn growth transformed to grain boundary diffusion accompanied by grain coarsening when the ultrasonic soldering temperature was increased to 320°C. Originality/value The microstructural evolution and growth kinetics of IMCs in ultrasonically prepared ultrasonic solder joints at different temperatures have rarely been reported in previous studies. In this study, the effect of ultrasound on microstructural evolution and growth kinetics of IMCs was systematically investigated.

Synthesis and Oxidation Kinetics of Sol-Gel and Sputtered Tantalum Nitride Thin Films

1995 ◽  
Vol 410 ◽  
Author(s):  
Gerald T. Kraus ◽  
Cory S. Oldweiler ◽  
Emmanuel P. Giannelis
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Oxidation Kinetics ◽  
Sol Gel ◽  
Tantalum Nitride ◽  
Sputtered Films ◽  
Parabolic Oxidation ◽  
Sol Gel Films ◽  
Kinetics Of

ABSTRACTTantalum nitride thin films were produced by nitridation of sol-gel tantala thin films. The oxidation kinetics and the activation energy for oxidation were investigated and compared to those of sputtered tantalum nitride thin films. Data was gathered from in situ sheet resistance measurements taken between 550 and 720 K. Sol-gel films exhibited parabolic oxidation kinetics and had an activation energy of 1.9 eV. Sputtered films displayed quartic oxidation kinetics at lower temperatures tending toward cubic kinetics at higher temperatures and had an activation energy of 1.6 eV.

Chemical stresses induced by grain-boundary diffusion in thin films

2001 ◽  
Vol 16 (7) ◽  
pp. 1967-1974 ◽  
Author(s):  
W. L. Wang ◽  
Y. T. Chou ◽  
Sanboh Lee
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Film Thickness ◽  
Maximum Stress ◽  
Infinite System ◽  
Boundary Diffusion ◽  
Electronic Device ◽  
Local Stress ◽  
Grain Boundary Diffusion ◽  
Tension And Compression

Chemical stresses induced by grain-boundary diffusion in thin films were analyzed. The stress distribution consisted of both tension and compression fields, and its characteristics were similar to those obtained for a semi-infinite solid. At a given time, the maximum stress (tension or compression) increased with increasing film thickness for both constant and instantaneous sources; it was generally higher than that in the semi-infinite system. The maximum stress (tension or compression) decreased as the diffusion time increased and at a given time and film thickness it increased with decreasing diffusivity ratio. The buildup of local stress is likely to cause damage and malfunctions of the film when used in an electronic device.

Modeling Investigation of the Oxidation Kinetics of Copper and Aluminum Alloys

2011 ◽  
Vol 402 ◽  
pp. 17-21 ◽  
Author(s):  
Feng Jin ◽  
Qun Luo ◽  
Biao Zhou ◽  
Qian Li
Keyword(s):  
Activation Energy ◽  
Aluminum Alloy ◽  
Aluminum Alloys ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Power Law ◽  
Oxidation Kinetics ◽  
Oxidation Rate ◽  
Calculation Results ◽  
Kinetics Of

The oxidation kinetics of copper or aluminum added with magnesium was investigated by a modified Chou model. The effect of the addition of magnesium in copper or aluminum was discussed. The calculation results showed that the activation energy of CuMg0.34 was the highest among Cu-Mg alloys at 600-900 °C, which indicated that it had the best oxidation resistance in all of the samples. The aluminum alloy AA3004 containing 1.0 wt.% Mg showed the better anti-oxide behavior than AA5182 with 4.0 wt.% Mg, and the relation between oxidation rate and oxygen partial pressure could be expressed as 0.71 times power law.

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