An Auger Electron Spectroscopic Study of the Diffusion of Sulfur and Carbon in α-Iron

1977 ◽  
Vol 31 (3) ◽  
pp. 210-213 ◽  
Author(s):  
W. E. Swartz ◽  
D. M. Holloway
Keyword(s):  
Activation Energy ◽  
Grain Boundary ◽  
Diffusion Process ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Boundary Diffusion ◽  
Carbon Migration ◽  
Sulfur Diffusion ◽  
Kinetics Of ◽  
Arrhenius Analysis

Auger electron spectroscopy has been employed to study the diffusion of sulfur and carbon in α-iron. In the temperature range 25 to 500°C carbon preferentially segregates to the surface. From 400 to 700°C sulfur segregates to the surface while carbon is thermally desorbed. An Arrhenius analysis of the sulfur diffusion data yields an activation energy of 14.5 kcal/mol, which is consistent with a grain boundary diffusion process. The kinetics of carbon migration is complicated by the thermal desorption which makes Arrhenius analysis impossible.

scholarly journals Diffusion-Controlled Liquid Bismuth Induced Intergranular Embrittlement of Copper

2005 ◽  
Vol 237-240 ◽  
pp. 683-688 ◽  
Author(s):  
V. Laporte ◽  
Krzysztof Wolski ◽  
Pascal Berger ◽  
A. Terlain ◽  
Gerard Santarini
Keyword(s):  
Grain Boundary ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Boundary Diffusion ◽  
Coupling Effect ◽  
Boundary Concentration ◽  
Liquid Bismuth ◽  
Intergranular Embrittlement ◽  
Diffusion Controlled ◽  
Grain Boundary Wetting

The consequences of the contact between liquid bismuth and a copper bicrystal are investigated at 500°C. Atoms of bismuth are shown to penetrate and embritlle the copper grain boundary. Grain boundary concentration profiles of bismuth are obtained on fracture surfaces by both Auger electron spectroscopy and He4+ Rutherford backscattering spectroscopy. The maximum bismuth intergranular concentration is calculated from experimental data to be about 1.7 monolayers (near the liquid bismuth / solid copper interface). The overall profiles are significantly different from typical erfc profiles and an interpretation is proposed, based on the coupling effect between grain boundary diffusion and non-linear segregation. These results allow us to conclude on the absence of grain boundary wetting for the Cu / Bi system at 500°C.

Kinetics of Cu Segregation in Al-Cu(1at% Cu) Interconnects Studied by Resistance Measurements

1997 ◽  
Vol 473 ◽  
Author(s):  
A. J. Kalkman ◽  
A. H. Verbruggen ◽  
G. C. A. M. Janssen ◽  
S. Radelaar
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Grain Boundary ◽  
Room Temperature ◽  
Boundary Diffusion ◽  
Measurement Temperature ◽  
Temperature Range ◽  
Different Temperatures ◽  
Resistance Decrease ◽  
Kinetics Of

ABSTRACTThe time-dependence of the growth of Al2Cu precipitates in Al-Cu(lat% Cu) thin films is studied by means of resistance measurements at different temperatures. The samples are annealed at 400°C for 1 hour, and then quickly cooled down to room temperature. Afterwards, the samples are heated within one minute to a measurement temperature between 140 °C and 240 °C. Growth of precipitates causes a well defined decrease in resistance. The observed resistance decrease does not follow an exponential decay. In the investigated temperature range the resistance decrease can be accurately modelled by (R(t)-R∞) = (Ro-R∞)exp(-(t /τ)n), with the time constant τ= τ0 exp(Ea / kT). Excellent fits were obtained resulting in n = 0.66±0.05, independent of temperature, and Ea= 0.81±0.03 eV. This value for the activation energy agrees very well with the activation energy that has been reported in literature for both electromigration failure in Al-Cu and grain-boundary diffusion of Cu in Al. The value we found for n is intriguingly close to 2/3 and deviates strongly from the values of n reported for bulk Al-Cu (n = 1.5–1.8) in the same temperature range.

Investigation of Ta grain boundary diffusion in copper by means of Auger electron spectroscopy

2004 ◽  
Vol 459 (1-2) ◽  
pp. 303-307 ◽  
Author(s):  
G Erdélyi ◽  
G Langer ◽  
J Nyéki ◽  
L Kövér ◽  
C Tomastik ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion

Oxidation kinetics of nanocrystalline Al thin films

2019 ◽  
Vol 66 (5) ◽  
pp. 638-643
Author(s):  
Jinsong Luo ◽  
Ligong Zhang ◽  
Haigui Yang ◽  
Nan Zhang ◽  
Yongfu Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Grain Boundary ◽  
Film Thickness ◽  
Silicon Substrate ◽  
Oxidation Kinetics ◽  
Oxidation Rate ◽  
Boundary Diffusion ◽  
Content Type ◽  
Kinetics Of

Purpose This paper aims to study the oxidation kinetics of the nanocrystalline Al ultrathin films. The influence of structure and composition evolution during thermal oxidation will be observed. The reason for the change in the oxidation activation energy on increasing the oxidation temperature will be discussed. Design/methodology/approach Al thin films are deposited on the silicon wafers as substrates by vacuumed thermal evaporation under the base pressure of 2 × 10−4 Pa, where the substrates are not heated. A crystalline quartz sensor is used to monitor the film thickness. The film thickness varies in the range from 30 to 100 nm. To keep the silicon substrate from oxidation during thermal oxidation of the Al film, a 50-nm gold film was deposited on the back side of silicon substrate. Isothermal oxidation studies of the Al film were carried out in air to assess the oxidation kinetics at 400-600°C. Findings The activation energy is positive and low for the low temperature oxidation, but it becomes apparently negative at higher temperatures. The oxide grains are nano-sized, and γ-Al2O3 crystals are formed at above 500°C. In light of the model by Davies, the grain boundary diffusion is believed to be the reason for the logarithmic oxidation rate rule. The negative activation energy at higher temperatures is apparent, which comes from the decline of diffusion paths due to the formation of the γ-Al2O3 crystals. Originality/value It is found that the oxidation kinetics of nanocrystalline Al thin films in air at 400-600°C follows the logarithmic law, and this logarithmic oxidation rate law is related to the grain boundary diffusion. The negative activation energies in the higher temperature range can be attributed to the formation of γ-Al2O3 crystal.

Temperature Dependent Intermixing At The V/Ge(111) Interface

1985 ◽  
Vol 54 ◽  
Author(s):  
M. Del Giudice ◽  
R. A. Butera ◽  
J. J. Joyce ◽  
M. W. Ruckman ◽  
J. H. Weaver
Keyword(s):  
Activation Energy ◽  
High Resolution ◽  
Grain Boundary ◽  
Diffusion Process ◽  
Boundary Diffusion ◽  
The Other ◽  
Reaction Products ◽  
Kcal Mole ◽  
Temperature Dependent ◽  
Heterogeneous Interfaces

ABSTRACTHigh resolution core level photoemission results show the temperature evolution of the V/Ge(111) interface in the range from 300 to 600 K. Three well-defined chemical environments are present for Ge at 300K (the first is the substrate and the other two are reaction products with overall shifts of−0.5 and −0.95 eV). Increasing the temperature enhances Ge outdiffusion, and a homogeneous reacted layer forms when deposition and measurements are done isothermally at 475K. The activation energy for this diffusion process is very low (5 kcal/mole), indicating the importance of grain boundary diffusion at reacting, heterogeneous interfaces.

Determination of grain-boundary diffusion coefficients by Auger electron spectroscopy

2000 ◽  
Vol 162-163 ◽  
pp. 213-218 ◽  
Author(s):  
Z. Erdélyi ◽  
Ch. Girardeaux ◽  
G.A. Langer ◽  
L. Daróczi ◽  
A. Rolland ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Auger Electron Spectroscopy ◽  
Diffusion Coefficients ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion
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