Aging analysis of nMOS of a 1.3- mu m partially depleted SIMOX SOI technology comparison with a 1.3- mu m bulk technology

1993 ◽  
Vol 40 (2) ◽  
pp. 364-370 ◽  
Author(s):  
G. Reimbold ◽  
A.-J. Auberton-Herve
Keyword(s):  
Bulk Technology ◽  
Soi Technology ◽  
Technology Comparison ◽  
Simox Soi

Total Dielectric Isolation (TDI) of Device Islands Using SIMOX/SOI Technology

1987 ◽  
Vol 107 ◽  
Author(s):  
P L F Hemment ◽  
A K Robinson ◽  
K J Reeson ◽  
J R Davis ◽  
J R Kilner ◽  
...  
Keyword(s):  
Ion Beam ◽  
Planar Layer ◽  
Thermal Oxide ◽  
Ion Beam Synthesis ◽  
Soi Technology ◽  
Simox Soi

AbstractA method of achieving total dielectric isolation (TDI) of device islands (or larger areas) using ion beam synthesis to form a continuous but non planar layer of SiO2 is described. The technique involves implantation through a patterned masking layer in which windows have been opened to define the dimensions and location of the islands. TDI structures have been successfully formed in annealed (1300°C, 5 hours) wafers implanted with a dose of 2.2 x 1018 O+ cm2 at 200 keV, using a thermal oxide mask of thickness 4750 Å.

Sigma-Delta ADC on SOI Technology for Working at High Temperatures

2020 ◽  
Vol 63 (11) ◽  
pp. 586-595
Author(s):  
Alexander Korotkov ◽  
Dmitry Morozov ◽  
Mikhail Pilipko ◽  
Mikhail Yenuchenko
Keyword(s):  
High Temperatures ◽  
Sigma Delta ◽  
Sigma Delta Adc ◽  
Soi Technology

Application of FIB Circuit Edit in Analysis of Memory Failure of SOI Devices

2006 ◽  
Author(s):  
Z. G. Song ◽  
S. K. Loh ◽  
X. H. Zheng ◽  
S.P. Neo ◽  
C. K. Oh
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
First Case ◽  
Edx Analyses ◽  
Memory Failure ◽  
Soi Devices ◽  
Voltage Contrast ◽  
Soi Technology

Abstract This article presents two cases to demonstrate the application of focused ion beam (FIB) circuit edit in analysis of memory failure of silicon on insulator (SOI) devices using XTEM and EDX analyses. The first case was a single bit failure of SRAM units manufactured with 90 nm technology in SOI wafer. The second case was the whole column failure with a single bit pass for a SRAM unit. From the results, it was concluded that FIB circuit edit and electrical characterization is a good methodology for further narrowing down the defective location of memory failure, especially for SOI technology, where contact-level passive voltage contrast is not suitable.

Electron Beam Absorbed Current as a Means of Locating Metal Defectivity on 45nm SOI Technology

2010 ◽  
Author(s):  
K. Dickson ◽  
G. Lange ◽  
K. Erington ◽  
J. Ybarra
Keyword(s):  
Electron Beam ◽  
Flip Chip ◽  
Back Side ◽  
Soi Technology

Abstract This paper describes the use of Electron Beam Absorbed Current (EBAC) mapping performed from the back side of the device as a means of locating metallization defects on flip chip 45nm SOI technology.

Comparative characteristics of provisional crowns made by CAD/CAM milling and 3D printing

2020 ◽  
pp. 45-49
Author(s):  
A.V. Stomatov ◽  
D.V. Stomatov ◽  
P.V. Ivanov ◽  
V.V. Marchenko ◽  
E.V. Piitsky ◽  
...  
Keyword(s):  
3D Printing ◽  
Good Alternative ◽  
Digital Model ◽  
Dental Practice ◽  
Production Methods ◽  
Automated Production ◽  
3D Printing Technology ◽  
Cad Cam ◽  
Milling Method ◽  
Technology Comparison

In this work, the authors studied and compared the two main methods used in dental practice for the automated production of orthopedic structures: the widely used CAD / CAM milling method and the 3D printing technology. As an object of research, temporary crowns were used, which were made on the basis of the same digital model: a) by the method of CAD / CAM milling from polymethylmethacrylate disks; b) by 3D printing from photopolymer resin based on LCD technology. Comparison of production methods and finished designs was carried out according to the following characteristics: strength, durability, aesthetic qualities, accuracy of orthopedic designs, etc. According to the results of the study, it was concluded that 3D printing can be a good alternative to CAD / CAM milling in solving problems of temporary prosthetics.

scholarly journals First experience of POLARx™ versus Arctic Front Advance™: An early technology comparison

2021 ◽  
Author(s):  
Antonio Creta ◽  
Viijayabharathy Kanthasamy ◽  
Richard J. Schilling ◽  
James Rosengarten ◽  
Fakhar Khan ◽  
...  
Keyword(s):  
Front Advance ◽  
Arctic Front ◽  
Technology Comparison
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