FD-SOI Technology: Comparison with FinFET and TCAD Simulation

2021 ◽  
Author(s):  
Dmitriy A. Lagaev ◽  
Nikolay A. Shelepin ◽  
Aleksey S. Klyuchnikov
Keyword(s):  
Tcad Simulation ◽  
Soi Technology ◽  
Technology Comparison

Reliability challenge of ESD protection: From planner SOI MOSFET to SOI FinFET

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740004 ◽  
Author(s):  
Yibo Jiang ◽  
Hui Bi ◽  
Liangwei Dong ◽  
Qinglong Li
Keyword(s):  
Electrostatic Discharge ◽  
Silicon On Insulator ◽  
Heat Conductor ◽  
Soi Mosfet ◽  
Novel Device ◽  
Thermal Distribution ◽  
Floating Base ◽  
Esd Protection ◽  
Tcad Simulation ◽  
Soi Technology

Implementation of Electrostatic Discharge (ESD) protection in Silicon on Insulator (SOI) technology is a challenge because of the inherent properties of poor heat conductor and heat trapping. In this paper, a novel device as ESD clamp is proposed as Fix-Base SOI FinFET clamp which addresses the troublesome problem of floating base. Moreover, its manufacturing process is compatible to the normal SOI process flow well. Finally, a detailed discussion including current density and thermal distribution are presented with the technique of 3D TCAD simulation.

Sigma-Delta ADC on SOI Technology for Working at High Temperatures

2020 ◽  
Vol 63 (11) ◽  
pp. 586-595
Author(s):  
Alexander Korotkov ◽  
Dmitry Morozov ◽  
Mikhail Pilipko ◽  
Mikhail Yenuchenko
Keyword(s):  
High Temperatures ◽  
Sigma Delta ◽  
Sigma Delta Adc ◽  
Soi Technology

Application of FIB Circuit Edit in Analysis of Memory Failure of SOI Devices

2006 ◽  
Author(s):  
Z. G. Song ◽  
S. K. Loh ◽  
X. H. Zheng ◽  
S.P. Neo ◽  
C. K. Oh
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
First Case ◽  
Edx Analyses ◽  
Memory Failure ◽  
Soi Devices ◽  
Voltage Contrast ◽  
Soi Technology

Abstract This article presents two cases to demonstrate the application of focused ion beam (FIB) circuit edit in analysis of memory failure of silicon on insulator (SOI) devices using XTEM and EDX analyses. The first case was a single bit failure of SRAM units manufactured with 90 nm technology in SOI wafer. The second case was the whole column failure with a single bit pass for a SRAM unit. From the results, it was concluded that FIB circuit edit and electrical characterization is a good methodology for further narrowing down the defective location of memory failure, especially for SOI technology, where contact-level passive voltage contrast is not suitable.

Electron Beam Absorbed Current as a Means of Locating Metal Defectivity on 45nm SOI Technology

2010 ◽  
Author(s):  
K. Dickson ◽  
G. Lange ◽  
K. Erington ◽  
J. Ybarra
Keyword(s):  
Electron Beam ◽  
Flip Chip ◽  
Back Side ◽  
Soi Technology

Abstract This paper describes the use of Electron Beam Absorbed Current (EBAC) mapping performed from the back side of the device as a means of locating metallization defects on flip chip 45nm SOI technology.

A New Approach for SRAM Soft Defect Root Cause Identification

2007 ◽  
Author(s):  
Peter Egger ◽  
Stefan Müller ◽  
Martin Stiftinger
Keyword(s):  
Integrated Circuits ◽  
Top Down ◽  
Feature Size ◽  
Design Rules ◽  
New Approach ◽  
Root Cause ◽  
Wafer Fab ◽  
Sram Cell ◽  
Tcad Simulation ◽  
Root Cause Identification

Abstract With shrinking feature size of integrated circuits traditional FA techniques like SEM inspection of top down delayered devices or cross sectioning often cannot determine the physical root cause. Inside SRAM blocks the aggressive design rules of transistor parameters can cause a local mismatch and therefore a soft fail of a single SRAM cell. This paper will present a new approach to identify a physical root cause with the help of nano probing and TCAD simulation to allow the wafer fab to implement countermeasures.

Comparative characteristics of provisional crowns made by CAD/CAM milling and 3D printing

2020 ◽  
pp. 45-49
Author(s):  
A.V. Stomatov ◽  
D.V. Stomatov ◽  
P.V. Ivanov ◽  
V.V. Marchenko ◽  
E.V. Piitsky ◽  
...  
Keyword(s):  
3D Printing ◽  
Good Alternative ◽  
Digital Model ◽  
Dental Practice ◽  
Production Methods ◽  
Automated Production ◽  
3D Printing Technology ◽  
Cad Cam ◽  
Milling Method ◽  
Technology Comparison

In this work, the authors studied and compared the two main methods used in dental practice for the automated production of orthopedic structures: the widely used CAD / CAM milling method and the 3D printing technology. As an object of research, temporary crowns were used, which were made on the basis of the same digital model: a) by the method of CAD / CAM milling from polymethylmethacrylate disks; b) by 3D printing from photopolymer resin based on LCD technology. Comparison of production methods and finished designs was carried out according to the following characteristics: strength, durability, aesthetic qualities, accuracy of orthopedic designs, etc. According to the results of the study, it was concluded that 3D printing can be a good alternative to CAD / CAM milling in solving problems of temporary prosthetics.

A Novel High-Stress Pre-Metal Dielectric Film to Improve Device Performance for sub-65nm CMOS Manufacturing

2006 ◽  
Vol 913 ◽  
Author(s):  
Young Way Teh ◽  
John Sudijono ◽  
Alok Jain ◽  
Shankar Venkataraman ◽  
Sunder Thirupapuliyur ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Dielectric Film ◽  
High Stress ◽  
Significant Degree ◽  
Strain Effect ◽  
Device Performance ◽  
Hot Carrier ◽  
Tcad Simulation ◽  
Improve Device ◽  
Deposition Techniques

AbstractThis work focuses on the development and physical characteristics of a novel dielectric film for a pre-metal dielectric (PMD) application which induces a significant degree of tensile stress in the channel of a sub-65nm node CMOS structure. The film can be deposited at low temperatures to meet the requirements of NiSi integration while maintaining void-free gap fill and superior film quality such as moisture content and uniformity. A manufacturable and highly reliable oxide film has been demonstrated through both TCAD simulation and real device data, showing ~6% NMOS Ion-Ioff improvement; no Ion-Ioff improvement or degradation on PMOS. A new concept has been proposed to explain the PMD strain effect on device performance improvement. Improvement in Hot Carrier immunity is observed compared to similar existing technologies using high density plasma (HDP) deposition techniques.

scholarly journals First experience of POLARx™ versus Arctic Front Advance™: An early technology comparison

2021 ◽  
Author(s):  
Antonio Creta ◽  
Viijayabharathy Kanthasamy ◽  
Richard J. Schilling ◽  
James Rosengarten ◽  
Fakhar Khan ◽  
...  
Keyword(s):  
Front Advance ◽  
Arctic Front ◽  
Technology Comparison
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