A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon

1989 ◽  
Vol 36 (9) ◽  
pp. 1773-1782 ◽  
Author(s):  
R. Jayaraman ◽  
C.G. Sodini
Keyword(s):  
Conduction Band ◽  
Trap Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Oxide Trap

Comment, on "A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon" [with reply]

1993 ◽  
Vol 40 (3) ◽  
pp. 680 ◽  
Author(s):  
C. Surya ◽  
T.Y. Hsiang ◽  
B.J. Gross ◽  
R. Jayaraman ◽  
C.G. Sodini
Keyword(s):  
Conduction Band ◽  
Trap Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Oxide Trap

Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique

2017 ◽  
Vol 897 ◽  
pp. 143-146 ◽  
Author(s):  
Gerald Rescher ◽  
Gregor Pobegen ◽  
Thomas Aichinger ◽  
Tibor Grasser
Keyword(s):  
Silicon Carbide ◽  
Conduction Band ◽  
State Density ◽  
Trap Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Power Mosfets ◽  
Charge Pumping ◽  
Wide Range ◽  
Reduced Mobility

We study the interface properties of 4H silicon carbide Si-face 0001 and a-face 11220 power MOSFETs using the charge pumping technique. MOSFETs produced on the a-face show a higher electron mobility than Si-face devices, although their charge pumping signal is 5 times higher, indicating a higher interface/border trap density. We show the main contribution to the interface/border trap density on a-face devices originates from deep states in a wide range around midgap, whereas Si-face devices show a higher and exponentially increasing interface/border state density close to the conduction band edge of 4H silicon carbide, resulting in reduced mobility.

scholarly journals 4H-SiC Power VDMOSFET Manufacturing Utilizing POCl3 Post Oxidation Annealing

2020 ◽  
Vol 1004 ◽  
pp. 559-564
Author(s):  
Yanrui Ju ◽  
Didier Bouvet ◽  
Roger Stark ◽  
Judith Woerle ◽  
Ulrike Grossner
Keyword(s):  
Electric Field ◽  
Conduction Band ◽  
Current Density ◽  
Trap Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Power Mosfet ◽  
Interface Characteristics

A novel POCl3 post-oxidation annealing recipe was developed. The interface trap density (Dit) is extracted by the C-ΨS method close to conduction band edge. The performance of the POCl3-treated oxide has been analyzed based on current density-electric field (J-E) measurements. A comprehensive and practical 4H-SiC power VDMOSFET manufacturing traveler has been designed. The power MOSFET that was fabricated based on this traveler exhibits less than half of the on-resistance and shows improved interface characteristics compared to a similarly designed commercial power MOSFET.

scholarly journals Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface

2006 ◽  
Vol 527-529 ◽  
pp. 949-954 ◽  
Author(s):  
S. Dhar ◽  
S.R. Wang ◽  
Ayayi Claude Ahyi ◽  
Tamara Isaacs-Smith ◽  
Sokrates T. Pantelides ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Conduction Band ◽  
Field Effect ◽  
Trap Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Maximum Field

Post-oxidation anneals that introduce nitrogen at the SiO2/4H-SiC interface have been most effective in reducing the large interface trap density near the 4H-SiC conduction band-edge for (0001) Si face 4H-SiC. Herein, we report the effect of nitridation on interfaces created on the (11 20) a-face and the (0001) C-face of 4H-SiC. Significant reductions in trap density (from >1013 cm-2 eV-1 to ~ 1012 cm-2 eV-1 at EC-E ~0.1 eV) were observed for these different interfaces, indicating the presence of substantial nitrogen susceptible defects for all crystal faces. Annealing nitridated interfaces in hydrogen results in a further reduction of trap density (from ~1012 cm-2 eV-1 to ~5 x 1011 cm-2 eV-1 at EC-E ~0.1 eV). Using sequential anneals in NO and H2, maximum field effect mobilities of ~55 cm-2 V-1s-1 and ~100 cm-2 V-1s-1 have been obtained for lateral MOSFETs fabricated on the (0001) and (11 20) faces, respectively. These electronic measurements have been correlated to the interface chemical composition.

Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge

2014 ◽  
Vol 778-780 ◽  
pp. 424-427
Author(s):  
Tetsuo Hatakeyama ◽  
Mitsuru Sometani ◽  
Kenji Fukuda ◽  
Hajime Okumura ◽  
Tsunenobu Kimoto
Keyword(s):  
Electron Density ◽  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface States ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Capture Process ◽  
Oxide Trap ◽  
Transient Spectroscopy

Constant-capacitance deep-level transient spectroscopy was carried out to characterize in detail interface states close to the conduction band edge in SiO2/SiC structures. The measured results are summarized as follows: (1) The capture of electrons by the interface states proceeds logarithmically with time. (2) The emission of electrons accelerates slightly with increasing density of captured electrons. The oxide trap model explains the logarithmic change in capture with time but not the phenomenon of accelerated emissions. This prompted us to formulate a new model that replicates the logarithmic capture process with time. In this model, we postulated the electron density at the interface decreases exponentially as the trapped electron density increases owing to the interaction between the trapped electrons and the free electrons. In this case, the capture process is almost the same as with the oxide trap model except for the definition of parameters. Further, we do not need to take into account the delay of the emission process caused by tunneling. The phenomenon of accelerated emissions may be explained by interactions among captured electrons in this model.

scholarly journals Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 822
Author(s):  
Hyo-Jun Joo ◽  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Sang-Hun Song
Keyword(s):  
Magnetic Field ◽  
Electron Density ◽  
Conduction Band ◽  
Electron System ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Offset Voltage ◽  
Three Samples ◽  
Dimensional Electron System ◽  
Longitudinal Distance

We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in the longitudinal distance between the probing points and the electron density to Fermi energy of the two-dimensional electron system, which was verified by the coincidence of the Hall voltage with the perpendicular magnetic field in the tilted magnetic field. From these results, we deduced the combined conduction band edge energy profiles from the Hall offset voltages with the electron density variations for three samples with different threshold voltages. The extracted combined conduction band edge varied by a few tens of meV over a longitudinal distance of a few tenths of µm. This result is in good agreement with the value obtained from the analysis of percolation conduction.

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