A modular, high performance, 2 μm CCD-BiCMOS process technology for application specific image sensors and image sensor systems on a chip

In this study, a blue photoresist with the hybrid dye-pigment system was developed by mixing xanthene-based dye (XPDIA) and blue pigment 15:6 (1:1, 5 wt% of total mixture amount) in order to develop high-performance image sensors with high thermal and chemical stability. The colorant used in this study has the nano-sized particle of around 100 nm and the physical property is related with the photonic property in image sensor application such as the cameras of mobile phone, car black box, security, etc. The hybrid dye-pigment system showed a high transmittance of more than 90% at 450 nm, and Δab showed very low color difference of 0.52. In solvent resistance, high transmittance of 90% was perfectly maintained, and Δab showed low color difference of 1.08. Migration test result exhibited no change at all after dipping in PGMEA transmittance spectrum. These results are due to the high absorption optical properties of XPDIA dye in the HDPS and the high thermal and chemical stability properties of the PB15:6 pigment. As a result, it was confirmed that the mixed blue hybrid spin coating film exhibited excellent thermal and chemical stability as well as good optical property.

Download Full-text

Synthesis and Physical Properties of New Violet Color Filter Dye for Image Sensors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19301 ◽

2021 ◽

Vol 21 (9) ◽

pp. 4685-4689

Author(s):

Hokyeom Kim ◽

Jongwook Park

Keyword(s):

High Performance ◽

Color Difference ◽

Image Sensor ◽

Image Sensors ◽

Color Filter ◽

Preparation Process ◽

Migration Test ◽

Good Solubility ◽

Violet Color ◽

Before And After

New violet colorant, XPDIA was synthesized by using Acid Red 52 to develop a high-performance image sensor. Solubility of XPDIA was more than 5 wt% in PGMEA which is the main solvent in the color filter preparation process. △Eab value of XPDIA showed a very low color difference of 2.17 after thermal treatment. In solvent resistance, transmittance was not changed and △Eab showed a low color difference of 1.55 before and after solvent dipping. As a result of the migration test, there was no change at all after dipping in the PGMEA transmittance spectrum. The newly synthesized violet colorant, XPDIA exhibited excellent thermal-chemical stability, and good solubility and it can be applied to image sensor color filter application.

Download Full-text

PureView Technology (Optimisation & Evaluation Techniques in Image Processing)

International Journal of Knowledge Based Computer Systems ◽

10.21863/ijkbcs/2015.3.2.006 ◽

2015 ◽

Vol 3 (2) ◽

Author(s):

Jyoti Prakash Patra ◽

Puru Agrawal

Keyword(s):

Image Processing ◽

High Resolution ◽

High Performance ◽

Image Sensor ◽

Image Sensors ◽

Resolution Image ◽

High Resolution Image ◽

Lighting Conditions ◽

High Quality Image ◽

Evaluation Techniques

PureView Technology is the combination of a super high-resolution image sensor and high-performance optics. It further applies advanced image processing algorithms and pixel oversampling to give the best quality outputs. It uses pixel oversampling method. Pixel oversampling combines many pixels to create a single (super) pixel. When this happens, we keep virtually all the details but filter away visual noise from the image. The speckled, grainy look we tend to get in low-lighting conditions is greatly reduced. One of the major benefits of this technology is loss-less zoom. The level of pixel oversampling is highest when we are not using the zoom. It gradually decreases until we hit maximum zoom, where there is no oversampling. This technique thus allows us to have loss-less zooms even when we are using the camera for taking zoomed in photos. The core of this technology lies somewhere in the satellite imagery system which uses a similar method of pixel oversampling and high-resolution image sensors. With PureView, uses a system called oversampling, which takes the original greater number of megapixels captured with the enormous sensor and reduces them to a high-quality image consisting of only a few megapixels. Pixels are pulled together into groups of seven and those seven pixels are then condensed into one, so that even though the resulting photograph is only a few megapixel images it is of a better quality than those captured with more traditional five megapixel cameras. For example, Nokia Lumia 1020 uses a 41-megapixel camera to take the original image, however, reduces this to only an output of 5 megapixels. This thus produces a

Download Full-text

Transient analysis of signal charge transfer in long diffused regions of spectroscopic image sensors

Canadian Journal of Physics ◽

10.1139/p92-175 ◽

1992 ◽

Vol 70 (10-11) ◽

pp. 1086-1091

Author(s):

David A. B. Dobson ◽

Savvas G. Chamberlain

Keyword(s):

Charge Transfer ◽

High Performance ◽

Image Sensor ◽

Image Sensors ◽

Oxide Semiconductor ◽

Transfer Time ◽

Experimental Image ◽

Experimental Side ◽

Flow Through ◽

Effect Transistor

This paper presents the results of a study of charge transfer time in long doped semiconductor regions. These regions are used to collect and store charge in high performance image sensors. The effect of dopant concentration on charge transfer time was studied using a novel two-dimensional device simulation tool. It was found that the delay associated with the long storage region only becomes significant for doping concentrations that are not degenerate. The effect of storage diffusion length on charge transfer time was also studied for degenerately doped structures. For these structures, it was found that the delay is much less than the conventional belief that the delay is proportional to the square of the diffusion dimension the electrons traverse. It was also found that the diffusion dimension affects the charge transfer time indirectly through the back biasing of the transfer metal oxide semiconductor field effect transistor (MOSFET). Shorter diffusions initially cause a larger back biasing of the transfer MOSFET, decreasing the maximum current flow through the device. On the experimental side, novel image sensor devices were designed that incorporate some of the results discussed above. Experimental image sensor structures were analyzed to study charge transfer time and relate the results to the computer simulations.

Download Full-text

Synthesis and Physical Properties of New Blue Color Filter Dye Using on Triarylmethine Moiety for Image Sensors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19299 ◽

2021 ◽

Vol 21 (9) ◽

pp. 4675-4679

Author(s):

Sunwoo Park ◽

Yeonkyu Jeong ◽

Seokwoo Kang ◽

Sangshin Park ◽

Hyukmin Kwon ◽

...

Keyword(s):

Chemical Stability ◽

High Performance ◽

Color Difference ◽

Image Sensor ◽

Image Sensors ◽

Color Filter ◽

Blue Color ◽

Migration Test ◽

Before And After ◽

Thermal And Chemical Stability

In this study, a triarylmethine derivative of DMCEBA-BTSA with the high thermal and chemical stability was newly synthesized in order to develop a high-performance image sensor. It showed a high transmittance of more than 80% at 450 nm and △Eab showed a very low color difference of 2.32 after thermal treatment. In solvent resistance, transmittance of 90% was not changed and △Eab showed a low color difference of 0.67 before and after solvent dipping. As a results of the migration test, there was no change at all after dipping in the PGMEA transmittance spectrum. It was confirmed that the newly synthesized blue colorant exhibited excellent thermal and chemical stability and it could be applied to image sensor color filter application as the blue color.

Download Full-text

1/f Noise Modelling and Characterization for CMOS Quanta Image Sensors

Sensors ◽

10.3390/s19245459 ◽

2019 ◽

Vol 19 (24) ◽

pp. 5459

Author(s):

Wei Deng ◽

Eric R. Fossum

Keyword(s):

Analog Circuits ◽

Image Sensor ◽

Image Sensors ◽

Correlated Double Sampling ◽

Cmos Image Sensors ◽

Source Follower ◽

Cmos Analog Circuits ◽

Different Origins ◽

Noise Models ◽

Fitting Model

This work fits the measured in-pixel source-follower noise in a CMOS Quanta Image Sensor (QIS) prototype chip using physics-based 1/f noise models, rather than the widely-used fitting model for analog designers. This paper discusses the different origins of 1/f noise in QIS devices and includes correlated double sampling (CDS). The modelling results based on the Hooge mobility fluctuation, which uses one adjustable parameter, match the experimental measurements, including the variation in noise from room temperature to –70 °C. This work provides useful information for the implementation of QIS in scientific applications and suggests that even lower read noise is attainable by further cooling and may be applicable to other CMOS analog circuits and CMOS image sensors.

Download Full-text

Application-Specific Memory Interleaving Enables High Performance in FPGA-based Grid Computations

2006 14th Annual IEEE Symposium on Field-Programmable Custom Computing Machines ◽

10.1109/fccm.2006.25 ◽

2006 ◽

Cited By ~ 1

Author(s):

Tom VanCourt ◽

Martin C. Herbordt

Keyword(s):

High Performance ◽

Specific Memory ◽

Application Specific

Download Full-text

Influence of Transparent Electrodes on Image Sensor Performance

MRS Proceedings ◽

10.1557/proc-49-429 ◽

1985 ◽

Vol 49 ◽

Cited By ~ 3

Author(s):

K. Kempter ◽

H. Wieczrek ◽

M. Hoheisel

Keyword(s):

Response Times ◽

Image Sensor ◽

Image Sensors ◽

Transparent Electrodes ◽

Sensor Performance ◽

Decay Times ◽

Sensor Cell ◽

Photocurrent Decay

AbstractThe short response times required for image sensors demand blocking contacts at the sensor cell. It was found that the junctions between transparent electrodes (ITO or a thin palladium film) and the metallic back electrode with a-Si:H form blocking contacts yielding photocurrent decay times of the order of some microseconds. The two different time regimes observed for the decay are interpreted as being limited by the drift and the release of holes respectively.

Download Full-text