Analysis of Different Generations of Current Conveyors Using CMOS and Its Simulation

Author(s):  
N Vanaja ◽  
Shashidhar Tantry
Keyword(s):  
2018 ◽  
Vol 27 (11) ◽  
pp. 1850170 ◽  
Author(s):  
Georgia Tsirimokou ◽  
Aslihan Kartci ◽  
Jaroslav Koton ◽  
Norbert Herencsar ◽  
Costas Psychalinos

Due to the absence of commercially available fractional-order capacitors and inductors, their implementation can be performed using fractional-order differentiators and integrators, respectively, combined with a voltage-to-current conversion stage. The transfer function of fractional-order differentiators and integrators can be approximated through the utilization of appropriate integer-order transfer functions. In order to achieve that, the Continued Fraction Expansion as well as the Oustaloup’s approximations can be utilized. The accuracy, in terms of magnitude and phase response, of transfer functions of differentiators/integrators derived through the employment of the aforementioned approximations, is very important factor for achieving high performance approximation of the fractional-order elements. A comparative study of the accuracy offered by the Continued Fraction Expansion and the Oustaloup’s approximation is performed in this paper. As a next step, the corresponding implementations of the emulators of the fractional-order elements, derived using fundamental active cells such as operational amplifiers, operational transconductance amplifiers, current conveyors, and current feedback operational amplifiers realized in commercially available discrete-component IC form, are compared in terms of the most important performance characteristics. The most suitable of them are further compared using the OrCAD PSpice software.


2013 ◽  
Vol 22 (09) ◽  
pp. 1340001 ◽  
Author(s):  
JIUN-WEI HORNG ◽  
TO-YAO CHIU ◽  
CHING-PAO HSIAO ◽  
GUANG-TING HUANG

A current-mode universal biquadratic filter with three input terminals and one output terminal is presented. The architecture uses two current conveyors (CCs), two grounded capacitors and two grounded resistors; and can realize all standard second-order filter functions — highpass, bandpass, lowpass, notch and allpass. Moreover, the circuit still offers the following advantage features: very low active and passive sensitivities, using of grounded capacitors and resistors which is ideal for integrated circuit implementation, without requirements for critical component matching conditions and very high output impedance. The workability of the proposed circuit has been verified via HSPICE simulations using TSMC 0.18 μm, level 49 MOSFET technology.


2019 ◽  
Vol 7 (3) ◽  
pp. 26
Author(s):  
NAIDU G. APPALA ◽  
KRISHNA B. TIRUMALA ◽  
◽  
Keyword(s):  

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1033
Author(s):  
Alessandro Nastro ◽  
Andrea De Marcellis ◽  
Marco Ferrari ◽  
Vittorio Ferrari

A Current-Mode (CM) TransImpedance Amplifier (TIA) based on Second Generation Current Conveyors (CCIIs) for capacitive microsensor measurements is presented. The designed electronic interface performs a capacitance-to-voltage conversion using 3 CCIIs and 3 resistors exploiting a synchronous-demodulation technique to improve the overall detection sensitivity and resolution of the system. A CM-TIA solution designed at transistor level in AMS0.35 µm integrated CMOS technology with a power consumption lower than 900 µW is proposed. Experimental results obtained with a board-level prototype show linear behavior of the proposed interface circuit with a resolution up to 34.5 fF and a sensitivity up to 223 mV/nF, confirming the theoretical expectations.


Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 973
Author(s):  
Marco Crescentini ◽  
Cinzia Tamburini ◽  
Luca Belsito ◽  
Aldo Romani ◽  
Alberto Roncaglia ◽  
...  

This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.


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