Mechanism B I-V Symmetry for MIM Capacitors Used in Microelectronics

2021 ◽  
Author(s):  
W.S. Lau
Keyword(s):  
Mim Capacitors

High-Performance MIM Capacitors Using HfLaO-Based Dielectrics

2010 ◽  
Vol 31 (1) ◽  
pp. 17-19 ◽  
Author(s):  
Lu Zhang ◽  
Wei He ◽  
D.S.H. Chan ◽  
Byung Jin Cho
Keyword(s):  
High Performance ◽  
Mim Capacitors

Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures

2021 ◽  
Vol 104 (4) ◽  
pp. 121-128
Author(s):  
Tomomi Sawada ◽  
Toshihide Nabatame ◽  
Takashi Onaya ◽  
Mari Inoue ◽  
Akihiko Ohi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Annealing Step ◽  
Mim Capacitors

High frequencies characterization of Cu-MIM capacitors in parallel configuration for advanced integrated circuits

2006 ◽  
Vol 83 (11-12) ◽  
pp. 2341-2345 ◽  
Author(s):  
J. Piquet ◽  
C. Bermond ◽  
M. Thomas ◽  
B. Fléchet ◽  
A. Farcy ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Frequencies ◽  
Parallel Configuration ◽  
Mim Capacitors

Improvement of Voltage Linearity in High-<tex>$kappa$</tex>MIM Capacitors Using<tex>$hbox HfO_2hbox --hbox SiO_2$</tex>Stacked Dielectric

2004 ◽  
Vol 25 (8) ◽  
pp. 538-540 ◽  
Author(s):  
S.J. Kim ◽  
B.J. Cho ◽  
M.-F. Li ◽  
S.-J. Ding ◽  
C. Zhu ◽  
...  
Keyword(s):  
Mim Capacitors

scholarly journals Influence of Ta and TaN bottom electrodes on electrical performances of MIM capacitors with atomic-layer-deposited HfO2 dielectric

2009 ◽  
Vol 58 (5) ◽  
pp. 3433
Author(s):  
Xu Jun ◽  
Huang Yu-Jian ◽  
Ding Shi-Jin ◽  
Zhang Wei
Keyword(s):  
Atomic Layer ◽  
Mim Capacitors
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