High-Performance MIM Capacitors Using HfLaO-Based Dielectrics

ABSTRACTMetal-insulator-metal (MIM) capacitors for DRAM applications have been realized using TiO2/ZrO2/TiO2 (TZT) and AlO-doped TZT (TZAZT and TZAZAZT) dielectric stacks. High capacitance densities of about 46.6 fF/μm2 (for TZT stacks), 46.2 fF/μm2 (for TZAZT stacks), and 46.8 fF/μm2 (for TZAZAZT stacks) have been achieved. Low leakage current densities of about 4.9×10−8 A/cm2, 5.5×10−9 A/cm2, and 9.7×10−9 A/cm2 (at -1 V) have been obtained for TZT, TZAZT, and TZAZAZT stacks, respectively. We analyze the leakage current mechanisms at different electric field regimes, and compute the barrier heights. The effects of constant current stress and constant voltage stress on the device characteristics are studied, and excellent device reliability is demonstrated. We compare the device performance of the fabricated capacitors with other stacked high-k MIM capacitors reported in recent literature.

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High Performance Ir/TiPrO/TaN MIM Capacitors for Analog ICs Application

ECS Transactions ◽

10.1149/1.2981616 ◽

2019 ◽

Vol 16 (5) ◽

pp. 341-352

Author(s):

Ching-Chien C. Huang ◽

C. H. Cheng ◽

Albert Chin ◽

C. P. Chou

Keyword(s):

High Performance ◽

Mim Capacitors

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High-Performance MIM Capacitors Using Novel PMNT Thin Films

IEEE Electron Device Letters ◽

10.1109/led.2010.2052585 ◽

2010 ◽

Vol 31 (9) ◽

pp. 996-998 ◽

Cited By ~ 9

Author(s):

Wenbin Chen ◽

Kevin G. McCarthy ◽

Alan Mathewson ◽

Mehmet Copuroglu ◽

Shane O'Brien ◽

...

Keyword(s):

Thin Films ◽

High Performance ◽

Mim Capacitors

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Material and Electrical Characterization of HfO2 Films for MIM Capacitors Application

MRS Proceedings ◽

10.1557/proc-766-e3.3 ◽

2003 ◽

Vol 766 ◽

Author(s):

Hang Hu ◽

Chunxiang Zhu ◽

Y. F. Lu ◽

Y. H. Wu ◽

T. Liew ◽

...

Keyword(s):

High Performance ◽

Analog Circuit ◽

Electrical Characterization ◽

Capacitance Density ◽

Force Microscopy ◽

Low Leakage ◽

Atomic Force ◽

Low Leakage Current ◽

Metal Insulator Metal ◽

Mim Capacitors

AbstractThin films of HfO2 high-κ dielectric have been prepared by pulsed-laser deposition (PLD) at various deposition conditions. X-ray diffraction (XRD), atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS) were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichiometry, while deposition pressure plays an important role in determining the ratio of Hf and O. The electrical properties of HfO2 Metal-Insulator-Metal (MIM) capacitors were investigated at various deposition temperatures. It is shown that the HfO2 (56 nm) MIM capacitor fabricated at 200 oC shows an overall high performance, such as a high capacitance density of ∼3.0 fF/νm2, a low leakage current of 2x10-9 A/cm2 at 3 V, etc. All these indicate that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

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A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors

2012 Symposium on VLSI Technology (VLSIT) ◽

10.1109/vlsit.2012.6242496 ◽

2012 ◽

Cited By ~ 306

Author(s):

C. Auth ◽

C. Allen ◽

A. Blattner ◽

D. Bergstrom ◽

M. Brazier ◽

...

Keyword(s):

Low Power ◽

High Performance ◽

Cmos Technology ◽

High Density ◽

Fully Depleted ◽

Low Power Cmos ◽

Mim Capacitors

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The Effect of Different Dielectric Materials in Designing High-Performance Metal-Insulator-Metal (MIM) Capacitors

International Journal of Electrical and Computer Engineering (IJECE) ◽

10.11591/ijece.v7i3.pp1554-1561 ◽

2017 ◽

Vol 7 (3) ◽

pp. 1554

Author(s):

M. A. Zulkifeli ◽

S. N. Sabki ◽

S. Taking ◽

N. A. Azmi ◽

S. S. Jamuar

Keyword(s):

Breakdown Voltage ◽

High Performance ◽

Dielectric Materials ◽

Dielectric Constants ◽

Metal Insulator ◽

Low Leakage ◽

Dielectric Layers ◽

Metal Insulator Metal ◽

Materials Used ◽

Mim Capacitors

A Metal-Insulator-Metal (MIM) capacitor with high capacitance, high breakdown voltage, and low leakage current is aspired so that the device can be applied in many electronic applications. The most significant factors that affect the MIM capacitor’s performance is the design and the dielectric materials used. In this study, MIM capacitors are simulated using different dielectric materials and different number of dielectric layers from two layers up to seven layers. The effect of the different dielectric constants (k) to the performance of the MIM capacitors is also studied, whereas this work investigates the effect of using low-k and high-k dielectric materials. The dielectric materials used in this study with high-k are Al2O3 and HfO2, while the low-k dielectric materials are SiO2 and Si3N4. The results demonstrate that the dielectric materials with high-k produce the highest capacitance. Results also show that metal-Al2O3 interfaces increase the performance of the MIM capacitors. By increasing the number of dielectric layers to seven stacks, the capacitance and breakdown voltage reach its highest value at 0.39 nF and 240 V, respectively.

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