Extensive fatigue investigation of solder joints in IGBT high power modules

2002 ◽  
Author(s):  
J.-M. Thebaud ◽  
E. Woirgard ◽  
C. Zardini ◽  
K.-H. Sommer
Keyword(s):  
High Power ◽  
Solder Joints ◽  
Power Modules

Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules

2014 ◽  
Vol 54 (9-10) ◽  
pp. 1856-1861 ◽  
Author(s):  
F. Dugal ◽  
M. Ciappa
Keyword(s):  
Thermal Cycling ◽  
High Power ◽  
Solder Joints ◽  
Die Attach ◽  
Power Modules ◽  
Temperature Aging

Avoiding misleading artefacts in metallurgical preparation of die attach solder joints in high power modules

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1403-1408 ◽  
Author(s):  
Franc Dugal ◽  
Mauro Ciappa
Keyword(s):  
High Power ◽  
Solder Joints ◽  
Die Attach ◽  
Power Modules

Electromigration Analysis of Solder Joints for Power Modules Using an Electrical-Thermal-Stress Coupled Model

2021 ◽  
Author(s):  
Mitsuaki Kato ◽  
Takahiro Omori ◽  
Akihiro Goryu ◽  
Tomoya Fumikura ◽  
Kenji Hirohata
Keyword(s):  
Thermal Stress ◽  
Solder Joints ◽  
Coupled Model ◽  
Power Modules

Electromigration Analysis of Solder Joints for Power Modules Using an Electrical-Thermal-Stress Coupled Model

2021 ◽  
Author(s):  
Mitsuaki Kato ◽  
Takahiro Omori ◽  
Akihiro Goryu ◽  
Tomoya Fumikura ◽  
Kenji Hirohata
Keyword(s):  
Thermal Stress ◽  
Solder Joint ◽  
Power Output ◽  
Solder Joints ◽  
Vacancy Concentration ◽  
Inelastic Strain ◽  
Power Device ◽  
Power Module ◽  
Power Modules ◽  
Rate Of Increase

Abstract Power modules are being developed to increase power output. The larger current densities accompanying increased power output are expected to degrade solder joints in power modules by electromigration. In previous research, numerical analysis of solder for electromigration has mainly examined ball grid arrays in flip-chip packages in which many solder balls are bonded under the semiconductor device. However, in a power module, a single solder joint is uniformly bonded under the power device. Because of this difference in geometric shape, the effect of electromigration in the solder of power modules may be significantly different from that in the solder of flip chips packages. This report describes an electromigration analysis of solder joints for power modules using an electrical-thermal-stress coupled analysis. First, we validate our numerical implementation and show that it can reproduce the vacancy concentrations and hydrostatic stress almost the same as the analytical solutions. We then simulate a single solder joint to evaluate electromigration in a solder joint in a power module. Once inelastic strain appears, the rate of increase in vacancy concentration slows, while the inelastic strain continuously increases. This phenomenon demonstrates that elastic-plastic-creep analysis is crucial for electromigration analysis of solder joints in power modules. Next, the solder joint with a power device and a substrate as used in power modules was simulated. Plasticity-creep and longitudinal gradient generated by current crowding have a strong effect on significantly reducing the vacancy concentration at the anode edge over a long period of time.

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

A new high capacity compact power modules for high power EV/HEV inverters

2016 ◽  
Author(s):  
Seiichiro Inokuchi ◽  
Shoji Saito ◽  
Arata Izuka ◽  
Yuki Hata ◽  
Shinji Hatae ◽  
...  
Keyword(s):  
High Power ◽  
High Capacity ◽  
Power Modules

Influence of nickel–phosphorus surface roughness on wettability and pores formation in solder joints for high power electronic applications

2013 ◽  
Vol 287 ◽  
pp. 13-21 ◽  
Author(s):  
L. Vivet ◽  
A.-L. Joudrier ◽  
K.-L. Tan ◽  
J.-M. Morelle ◽  
A. Etcheberry ◽  
...  
Keyword(s):  
Surface Roughness ◽  
High Power ◽  
Solder Joints ◽  
Power Electronic
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