Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules

2015 ◽  
Author(s):  
F. Dugal ◽  
M. Ciappa
Keyword(s):  
Thermal Cycling ◽  
High Power ◽  
Solder Joints ◽  
Die Attach ◽  
Power Modules ◽  
Temperature Aging

Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules

2014 ◽  
Vol 54 (9-10) ◽  
pp. 1856-1861 ◽  
Author(s):  
F. Dugal ◽  
M. Ciappa
Keyword(s):  
Thermal Cycling ◽  
High Power ◽  
Solder Joints ◽  
Die Attach ◽  
Power Modules ◽  
Temperature Aging

Avoiding misleading artefacts in metallurgical preparation of die attach solder joints in high power modules

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1403-1408 ◽  
Author(s):  
Franc Dugal ◽  
Mauro Ciappa
Keyword(s):  
High Power ◽  
Solder Joints ◽  
Die Attach ◽  
Power Modules

scholarly journals Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules

2019 ◽  
Author(s):  
Erick Gutierrez ◽  
Kevin Lin ◽  
Douglas DeVoto ◽  
Patrick McCluskey
Keyword(s):  
Thermal Cycling ◽  
Failure Modes ◽  
Rapid Determination ◽  
Degradation Process ◽  
In Situ Monitoring ◽  
Power Module ◽  
Insulated Gate Bipolar Transistor ◽  
Die Attach ◽  
Power Modules

Abstract Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for high-power applications. Operation and environmental stresses can cause these power modules to progressively degrade over time, potentially leading to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization were performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment aimed to assess the potential damage effects of thermal cycling on the die attach, results indicated that wire bond degradation was the life-limiting failure mechanism.

Extensive fatigue investigation of solder joints in IGBT high power modules

2002 ◽  
Author(s):  
J.-M. Thebaud ◽  
E. Woirgard ◽  
C. Zardini ◽  
K.-H. Sommer
Keyword(s):  
High Power ◽  
Solder Joints ◽  
Power Modules

Package Reliability of the SiC Power Modules in Harsh Environments

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000139-000144
Author(s):  
Fengqun Lang ◽  
Hiroshi Yamaguchi ◽  
Hiroshi Sato
Keyword(s):  
Mechanical Properties ◽  
Surface Roughness ◽  
Electrical Resistivity ◽  
Thermal Cycling ◽  
Isothermal Aging ◽  
Harsh Environments ◽  
Die Attach ◽  
Power Modules ◽  
Almost All ◽  
Package Reliability

To evaluate the package reliability of the SiC power modules in harsh environments, the SiC Schottky Barrier Diodes (SBDs) were die bonded to the Si3N4/Cu/Ni(P) substrate with Au-Ge eutectic solder using a vacuum reflow furnace. The Si3N4/Cu/Ni(P) substrates are active metalized copper (AMC). The bonded samples were isothermally aged at 330°C and tested under thermal cycling conditions in the temperature range of −40–300°C in air. During the isothermal aging, cracks of the Ni(P) layer developed, resulting in oxidation of the Cu power path. Decrease in the die bond strength and increase in the electrical resistivity were observed due to the Cu power path oxidation and the growth of the Ni-Ge intermetalic compound (IMC) in the joint. Under the thermal cycling conditions, the metallization of the substrate suffers from serious surface roughness, which greatly degrades the die-attach reliability. The Al electrode was found to seriously exfoliate from the SiC-SBDs due to the thermal stress. After 521 cycles, almost all the Al electrode exfoliated form the anode. Benefit from the excellent mechanical properties of Si3N4, no detachment of the Cu layer was observed from the Si3N4 substrate after 1079 cycles, while the Cu layer detached from the AlN substrate only after 12 cycles.

Shear Toughness Evaluation of Solder Joints for the Reliability Tests

2013 ◽  
Vol 311 ◽  
pp. 467-471
Author(s):  
Chao Ming Hsu ◽  
Ah Der Lin ◽  
Tsung Pin Hung ◽  
Wen Chun Chiu ◽  
Jao Hwa Kuang
Keyword(s):  
High Temperature ◽  
Thermal Cycling ◽  
Solder Joints ◽  
Load Testing ◽  
Thermal Cycling Testing ◽  
Toughness Evaluation ◽  
High Temperature Aging ◽  
The Difference ◽  
Ball Joints ◽  
Temperature Aging

The effects of isothermal aging and the thermal cycling loading on the shear toughness of different solder materials and ball sizes have been explored. The difference between shear toughness values of traditional Sn/37Pb eutectic solder ball joints and the lead free Sn/3.0Ag/0.5Cu solders are chosen for discussion. The experiment measurements under the ball shear test (BST) have been compared and studied for both solder joints. The fracture behaviors of the solder joints under the high temperature aging and thermal cycling testing are examined by scanning electron microscope (SEM). The variation of shear toughness of different ball joints reveals that the high temperature aging and thermal cyclic loading reduce the shear toughness significantly. The measured shear toughness values indicate that the Sn/3.0Ag/0.5Cu solder joints have better ductility for the joints undergoing the high temperature aging and the thermal cycle loadings. Based on the measured results, the better reliability for the Sn/3.0Ag/0.5Cu ball joints is expected, due to the aging and cycling load testing.

Impact of Metallurgical and Mechanical Properties of Sintered Silver Nanoparticles on Die-attach Reliability of High-temperature Power Modules

2015 ◽  
Vol 2015 (1) ◽  
pp. 000842-000847
Author(s):  
Hiroaki Tatsumi ◽  
Sho Kumada ◽  
Atsushi Fukuda ◽  
Hiroshi Yamaguchi ◽  
Yoshihiro Kashiba
Keyword(s):  
Mechanical Properties ◽  
Grain Size ◽  
Silver Nanoparticles ◽  
High Temperature ◽  
Thermal Cycling ◽  
Nanocrystalline Structure ◽  
Bonding Pressure ◽  
Die Attach ◽  
Power Modules ◽  
Sintered Silver

Sintered silver bonding processes are expected to offer bonding solutions with high heat resistances for power modules using wide-bandgap semiconductors. This study reports the die-attach reliability of such a bonding process under thermal cycling tests, focusing on the metallurgical and mechanical properties of sintered silver nanoparticles. A nanocrystalline structure with a grain size of approximately 150 nm was observed in the as-sintered state, while a coarsened structure with a grain size of several microns and pore coalescence was observed after annealing at 623 K for 1 h. In addition, the increase of bonding pressure reduced the number of coarse pores. Observations with a transmission electron microscope showed favorable crystalline structure along the grain boundaries. Tensile tests at room and high temperature revealed that the sintered silver nanoparticles showed the inherent mechanical properties of nanocrystalline metals. Thermal cycling tests of die-attached specimens demonstrated the temperature dependence of crack propagation caused by plastic deformation at a constant temperature amplitude. Furthermore, pore coalescence and coarsening reduced bonding reliability. It can be inferred from the results that nanocrystalline structure and minute pore dispersion improves bonding reliability.

Development of Embedded High Power Electronics Modules for Automotive Applications

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 001717-001743
Author(s):  
Lars Boettcher ◽  
S. Karaszkiewicz ◽  
D. Manessis ◽  
A. Ostmann
Keyword(s):  
Power Electronics ◽  
High Power ◽  
Printed Circuit Board ◽  
Copper Substrate ◽  
Circuit Board ◽  
Installation Space ◽  
Temperature Sinter ◽  
Die Attach ◽  
Power Modules ◽  
Power Switches

The automotive industry has a strong demand for highly reliable and cost-efficient electronics. Especially the upcoming generations of hybrid cars and fully electrical vehicles need compact and efficient 400 V power modules. Within the engine compartment installation space is of major concern. Therefore small size and high integration level of the modules are needed. Conventionally IGBTs and diodes are soldered to DCB (Direct Copper Bond) ceramics substrates and their top contacts are connected by heavy Al wire bonds. These ceramic modules are vacuum soldered to water-cooled base plates. Embedding of power switches, and controller into compact modules using PCB (Printed Circuit Board) technologies offers the potential to further improve the thermal management by double-sided cooling and to reduce the thickness of the module. In the recently started “HI-LEVEL” (Integration of Power Electronics in in High Current PCBs for Electric Vehicle Application) project, partners from automotive, automotive supplier, material supplier, PCB manufacturer and research teamed up to develop the technology, components and materials to realize high power modules. The following topics of the development will be addressed in detail in this paper:Assemble of power dies (IGBT and diode) using new sinter die attach materials:The deployment of new no pressure, low temperature sinter paste for the assembly of the power dies is a mayor development goal. Here the development of a reliable process to realize a defect free bonding of large IGBT dies (up to 10x14mm2) is essentially. These pastes are applied by stencil printing or dispensing and the sintering will take place after die placement at temperatures of around 200 °C.Thick copper substrate technology:To handle the high switching current, suitable copper tracks in the PCB are required. The realization of such thick copper lines (up to 1mm thickness) requires advanced processing, compared to conventional multilayer PCB production. In this paper the essential development steps towards a 10 kW inverter module with embedded components will be described. The process steps and reliability investigations of the different interconnect levels will be described in detail.

Impact of Metallurgical and Mechanical Properties of Sintered Silver Joints on Die-Attach Reliability of High-Temperature Power Modules

2016 ◽  
Vol 13 (3) ◽  
pp. 121-127 ◽  
Author(s):  
Hiroaki Tatsumi ◽  
Sho Kumada ◽  
Atsushi Fukuda ◽  
Hiroshi Yamaguchi ◽  
Yoshihiro Kashiba
Keyword(s):  
Mechanical Properties ◽  
High Temperature ◽  
Thermal Cycling ◽  
Tensile Tests ◽  
High Heat ◽  
Bonding Pressure ◽  
Die Attach ◽  
Power Modules ◽  
Bandgap Semiconductors ◽  
Sintered Silver

Sintered silver bonding processes are expected to offer bonding solutions with high heat endurance for power modules using wide bandgap semiconductors. This study reports the die-attach reliability of the bonding process under thermal cycling tests, focusing on the metallurgical and mechanical properties of sintered silver joints. A nanocrystalline (NC) structure with 150-nm-sized grains was observed in the as-sintered state, while a coarsened structure with microsized grains and pore coalescence was observed after annealing at 350°C for 1 h. In addition, the increase of bonding pressure reduced the number of coarse pores. Transmission electron microscope observations showed favorable crystalline structure along the grain boundaries. Tensile tests at room and high temperature revealed that the sintered silver materials showed the inherent mechanical properties of NC metals. Thermal cycling tests of die-attached specimens demonstrated the temperature dependence of crack resistance at constant amplitude. Furthermore, coalescence of pores and coarsening of grains reduced bonding reliability. It can be inferred from the results that NC structure and minute pore dispersion improves bonding reliability.

scholarly journals Study of Thermal Stress Fluctuations at the Die-Attach Solder Interface Using the Finite Element Method

Electronics ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 62
Author(s):  
Luchun Yan ◽  
Jiawen Yao ◽  
Yu Dai ◽  
Shanshan Zhang ◽  
Wangmin Bai ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Thermal Cycling ◽  
Solder Joints ◽  
Stress Recovery ◽  
The Finite Element Method ◽  
Die Attach ◽  
Cyclic Temperature ◽  
Cte Mismatch ◽  
Solder Interface ◽  
Solder Layer

Solder joints in electronic packages are frequently exposed to thermal cycling in both real-life applications and accelerated thermal cycling tests. Cyclic temperature leads the solder joints to be subjected to cyclic mechanical loading and often accelerates the cracking failure of the solder joints. The cause of stress generated in thermal cycling is usually attributed to the coefficients of thermal expansion (CTE) mismatch of the assembly materials. In a die-attach structure consisting of multiple layers of materials, the effect of their CTE mismatch on the thermal stress at a critical location can be very complex. In this study, we investigated the influence of different materials in a die-attach structure on the stress at the chip–solder interface with the finite element method. The die-attach structure included a SiC chip, a SAC solder layer and a DBC substrate. Three models covering different modeling scopes (i.e., model I, chip–solder layer; model II, chip–solder layer and copper layer; and model III, chip–solder layer and DBC substrate) were developed. The 25–150 °C cyclic temperature loading was applied to the die-attach structure, and the change of stress at the chip–solder interface was calculated. The results of model I showed that the chip–solder CTE mismatch, as the only stress source, led to a periodic and monotonic stress change in the temperature cycling. Compared to the stress curve of model I, an extra stress recovery peak appeared in both model II and model III during the ramp-up of temperature. It was demonstrated that the CTE mismatch between the solder and copper layer (or DBC substrate) not only affected the maximum stress at the chip–solder interface, but also caused the stress recovery peak. Thus, the combined effect of assembly materials in the die-attach structure should be considered when exploring the joint thermal stresses.

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