Viscoelastic properties of underfill for numerical analysis of flip chip packages

2004 ◽  
Author(s):  
Man-Lung Sham ◽  
Jang-Kyo Kim ◽  
Joo-Hyak Park
Keyword(s):  
Numerical Analysis ◽  
Viscoelastic Properties ◽  
Flip Chip

Experiment and Numerical Analysis of the Residual Stresses in Underfill Resins for Flip Chip Package Applications

2005 ◽  
Vol 127 (1) ◽  
pp. 47-51 ◽  
Author(s):  
Man-Lung Sham ◽  
Jang-Kyo Kim
Keyword(s):  
Numerical Analysis ◽  
Residual Stresses ◽  
Integrated Circuit ◽  
Flip Chip ◽  
Coefficient Of Thermal Expansion ◽  
Flexural Modulus ◽  
Curing Temperature ◽  
Electronic Packages ◽  
Element Analysis ◽  
Plastic Package

Polymeric encapsulant is widely used to protect the integrated circuit chips and thus to enhance the reliability of electronic packages. Residual stresses are introduced in the plastic package when the polymer is cooled from the curing temperature to ambient, from which many reliability issues arise, including warpage of the package, premature interfacial failure, and degraded interconnections. Bimaterial strip bending experiment has been employed successfully to monitor the evolution of the residual stresses in underfrill resins for flip chip applications. A numerical analysis is developed to predict the residual stresses, which agree well with the experimental measurements. The changes of material properties, such as flexural modulus and coefficient of thermal expansion, of the resins with temperature are taken into account in the finite element analysis.

scholarly journals Lossless WDM PON Photonic Integrated Receivers Including SOAs

2019 ◽  
Vol 9 (12) ◽  
pp. 2457 ◽  
Author(s):  
Goki ◽  
Imran ◽  
Porzi ◽  
Toccafondo ◽  
Fresi ◽  
...  
Keyword(s):  
Numerical Analysis ◽  
Wavelength Division Multiplexing ◽  
Flip Chip ◽  
Optical Network ◽  
Silicon On Insulator ◽  
Passive Optical Network ◽  
Case Scenario ◽  
Worst Case ◽  
The Impact ◽  
Wdm Transmission

The role of a semiconductor optical amplifier (SOA) for amplifying downstream traffic at optical network terminals (ONT) within a silicon-photonics integrated receiver in a high capacity passive optical network (PON) is investigated. The nearly traveling wave SOA effects are evaluated by considering fabrication and link loss constraints through numerical analysis and experimental validation. The impact of hybrid integration of a SOA chip on a silicon on insulator (SOI) photonic chip using the flip chip bonding technique on SOA design is evaluated through numerical analysis of a multi section cavity model. The performance of the proposed ONT receiver design employing twin parallel SOAs is evaluated experimentally on a 32 × 25 Gb/s OOK WDM transmission system considering cross gain modulation (XGM) and amplified spontaneous emission (ASE) constraints. The XGM impact is evaluated through 32 channel wavelength division multiplexing (WDM) transmission and a likely PON worst case scenario of high channel power difference (~10 dB) between adjacent channels. The impact of ASE is evaluated through the worst-case polarization condition, i.e., when all of the signal is coupled to only one. Successful transmission was achieved in both worst-case conditions with limited impact on performance. SOA results indicate that a maximum residual facet reflectivity of 4 × 10−4 for the chip-bonded device can lead to a power penalty below 2 dB in a polarization-diversity twin SOAs receiver.

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