The growth and segregation of intermetallic compounds in the bulk of flip chip Sn2.4Ag solder joint under electrical current stressing

2013 ◽  
Author(s):  
Wei-Chieh Wang ◽  
Kwang-Lung Lin ◽  
Ying-Ta Chiu ◽  
Yi-Shao Lai
Keyword(s):  
Solder Joint ◽  
Intermetallic Compounds ◽  
Flip Chip ◽  
Electrical Current ◽  
Current Stressing

Effects of electromigration on the growth of intermetallic compounds in Cu/SnBi/Cu solder joints

2008 ◽  
Vol 23 (10) ◽  
pp. 2591-2596 ◽  
Author(s):  
X. Gu ◽  
D. Yang ◽  
Y.C. Chan ◽  
B.Y. Wu
Keyword(s):  
Activation Energy ◽  
Solder Joint ◽  
Intermetallic Compounds ◽  
Direct Current ◽  
Solder Joints ◽  
Cathode Side ◽  
Anode Side ◽  
Kinetics Parameters ◽  
Ambient Temperatures ◽  
Current Stressing

In this study, the effects of electromigration (EM) on the growth of Cu–Sn intermetallic compounds (IMCs) in Cu/SnBi/Cu solder joints under 5 × 103 A/cm2 direct current stressing at 308, 328, and 348 K were investigated. For each Cu/SnBi/Cu solder joint under current stressing, the IMCs at the cathode side grew faster than that at the anode side. The growth of these IMCs at the anode side and the cathode side were enhanced by electric current. The growth of these IMCs at the cathode followed a parabolic growth law. The kinetics parameters of the growth of the IMCs were calculated from the thickness data of the IMCs at the cathode side at different ambient temperatures. The calculated intrinsic diffusivity (D0) of the Cu–Sn IMCs was 9.91 × 10−5 m2/s, and the activation energy of the growth of the total Cu–Sn IMC layer was 89.2 kJ/mol (0.92 eV).

Failure Modes of Flip Chip Solder Joints Under High Electric Current Density

2004 ◽  
Vol 127 (2) ◽  
pp. 157-163 ◽  
Author(s):  
C. Basaran ◽  
H. Ye ◽  
D. C. Hopkins ◽  
D. Frear ◽  
J. K. Lin
Keyword(s):  
Solder Joint ◽  
Current Density ◽  
Flip Chip ◽  
Failure Modes ◽  
Solder Joints ◽  
Void Nucleation ◽  
Electrical Current ◽  
Nucleation And Growth ◽  
Joint Interface ◽  
Void Nucleation And Growth

The failure modes of flip chip solder joints under high electrical current density are studied experimentally. Three different failure modes are reported. Only one of the failure modes is caused by the combined effect of electromigration and thermomigration, where void nucleation and growth contribute to the ultimate failure of the module. The Ni under bump metallization–solder joint interface is found to be the favorite site for void nucleation and growth. The effect of pre-existing voids on the failure mechanism of a solder joint is also investigated

Experimental evaluation of SnAgCu solder joint reliability in 100-μm pitch flip-chip assemblies

2014 ◽  
Vol 54 (5) ◽  
pp. 939-944 ◽  
Author(s):  
Ye Tian ◽  
Xi Liu ◽  
Justin Chow ◽  
Yi Ping Wu ◽  
Suresh K. Sitaraman
Keyword(s):  
Solder Joint ◽  
Experimental Evaluation ◽  
Flip Chip ◽  
Solder Joint Reliability ◽  
Snagcu Solder ◽  
Joint Reliability

Precise Quantitative Evaluation of Nano-Ordered Intermetallic Compounds in Sn-3.0Ag-0.5Cu Lead-Free Solder Bump by Using TEM

2008 ◽  
Vol 47-50 ◽  
pp. 907-911
Author(s):  
Chang Woo Lee ◽  
Y.S. Shin ◽  
J.H. Kim
Keyword(s):  
Intermetallic Compounds ◽  
Flip Chip ◽  
Solder Bump ◽  
Lead Free Solder ◽  
Growth Behaviour ◽  
Sic Particles ◽  
Imcs Growth ◽  
Ordered Intermetallic ◽  
Free Solder ◽  
The One

The growth behaviour of the intermetallic compounds (IMCs) in Pb-free solder bump is investigated. The Pb-free micro-bump, Sn-50%Bi, was fabricated by binary electroplating for flip-chip bond. The diameter of the bump is about 506m and the height is about 60 6m. In order to increase the reliability of the bonding, it is necessary to protect the growth of the IMCs in interface between Cu pad and the solder bump. For control of IMCs growth, SiC particles were distributed in the micro-solder bump during electroplating. The thickness of the IMCs in the interface was estimated by FE-SEM, EDS, XRF and TEM. From the results, The IMCs were found as Cu6Sn5 and Cu3Sn. The thickness of the IMCs decreases with increase the amount of SiC particles until 4 g/cm2. The one candidate of the reasons is that the SiC particles could decrease the area which be reacted between the solder and Cu layer. And another candidate is that the particle can make to difficult inter-diffusion within the interface.

Evaluation of solder joint reliability in flip chip package under thermal shock test

2006 ◽  
Vol 504 (1-2) ◽  
pp. 426-430 ◽  
Author(s):  
Dae-Gon Kim ◽  
Jong-Woong Kim ◽  
Seung-Boo Jung
Keyword(s):  
Solder Joint ◽  
Thermal Shock ◽  
Flip Chip ◽  
Thermal Shock Test ◽  
Solder Joint Reliability ◽  
Shock Test ◽  
Joint Reliability
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