Developments in Advanced Packaging Failure Analysis using Correlated X-Ray Microscopy and LaserFIB

This paper describes the utilization of non-destructive imaging using 3D x-ray microscopy for package development and failure analysis. Four case studies are discussed to explain our methodology and its impact on our advanced packaging development effort. Identifying and locating failures embedded deep inside the package, such as a solder fatigue failure within a flip chip package, without the need for physical cross-sectioning is of substantial benefit because it preserves the package for further analysis. Also of utility is the ability to reveal the structural details of the package while producing superior quality 2D and volumetric images. The technique could be used not only for analysis of defects and failures, but also to characterize geometries and morphologies during the process and package development stage.

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Use of 3D X-Ray Microscopy for BEOL and Advanced Packaging Failure Analysis

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2017p0489 ◽

2017 ◽

Author(s):

Christian Schmidt ◽

Stephen T. Kelly ◽

Ingrid De Wolf

Keyword(s):

Sample Preparation ◽

Failure Analysis ◽

Fault Isolation ◽

Short Introduction ◽

Basic Principles ◽

X Ray ◽

Line Feature ◽

Advanced Packaging ◽

New Challenges ◽

Semiconductor Packages

Abstract With the growing complexity and interconnect density of modern semiconductor packages, package level FA is also facing new challenges and requirements. 3D X-Ray Microscopy (XRM) is considered a key method to fulfill these requirements and enable high success FA yield. After a short introduction into the basic principles of lab-based X-Ray tomography, 2 different approaches of X-Ray investigations are discussed and an integration into the daily FA flow is proposed. In the first example, fault isolation on a fully packaged device is demonstrated using a stacked die device. In the second example, a newly developed sample preparation flow in combination with Nanoscale 3D X-Ray Microscopy for Chip-Package-Interaction and Back-end-of-line feature imaging is introduced.

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A Novel X-Ray Microtomography System with High Resolution and Throughput for Non-Destructive 3D Imaging of Advanced Packages

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0094 ◽

2004 ◽

Author(s):

David Scott ◽

Fred Duewer ◽

Shashi Kamath ◽

Alan Lyon ◽

David Trapp ◽

...

Keyword(s):

High Resolution ◽

Failure Analysis ◽

Tomographic Reconstruction ◽

Three Dimensional ◽

Tomographic Imaging ◽

Fault Isolation ◽

X Ray ◽

Sample Rotation ◽

Reconstruction Methods ◽

Advanced Packaging

Abstract X-ray microscopy has the potential to solve many failure analysis problems associated with advanced package technologies because of its ability to non-destructively inspect advanced multi-layer package designs. In addition, x-ray imaging has the potential to perform fault isolation in 3D using well-established tomographic reconstruction methods. The ability to perform high-resolution, artifact free tomographic reconstructions will be critical to the Advanced Packaging Failure Analysis community. This article discusses the requirements for a high-resolution, three-dimensional tomographic imaging microscope and shows how these requirements pose a problem for conventional projection based x-ray microscopes, specifically the requirement to place the sample in near contact with the x-ray source. The article then discusses the results from the Micro-XCT, an x-ray tomographic imaging microscope designed by Xradia, Inc., whose unique design allows for the required 180 degrees of sample rotation while simultaneously maintaining resolutions as high as 1 micrometer.

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Advanced Acoustic Micro Imaging Applications: Deciphering Multiple Acoustic Echoes and Reflections

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0376 ◽

2004 ◽

Author(s):

Andrew J. Komrowski ◽

Luis A. Curiel ◽

Daniel J. D. Sullivan ◽

Quang Nguyen ◽

Lisa Logan-Willams

Keyword(s):

Failure Analysis ◽

Case Studies ◽

New Technologies ◽

Electronic Packages ◽

Advanced Packaging ◽

Ic Package ◽

Non Destructive

Abstract The acquisition of reliable Acoustic Micro Images (AMI) are an essential non-destructive step in the Failure Analysis (FA) of electronic packages. Advanced packaging and new IC materials present challenges to the collection of reliable AMI signals. The AMI is complicated due to new technologies that utilize an increasing number of interfaces in ICs and packages. We present two case studies in which it is necessary to decipher the acoustic echoes from the signals generated by the interface of interest in order to acquire trustworthy information about the IC package.

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Failure Analysis of Killer Defects and Yield Enhancement of Flat ROM Devices in Wafer Fabrication

ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2000p0063 ◽

2000 ◽

Author(s):

Y. N. Hua ◽

Z. R. Guo ◽

L. H. An ◽

Shailesh Redkar

Keyword(s):

Electron Microscope ◽

Failure Analysis ◽

Fault Isolation ◽

Yield Enhancement ◽

Wafer Fabrication ◽

X Ray ◽

Particle Contamination ◽

Emission Microscopy ◽

Microscopy Techniques ◽

Scanning Electron

Abstract In this paper, some low yield cases in Flat ROM device (0.45 and 0.6 µm) were investigated. To find killer defects and particle contamination, KLA, bitmap and emission microscopy techniques were used in fault isolation. Reactive ion etching (RIE) and chemical delayering, 155 Wright Etch, BN+ Etch and scanning electron microscope (SEM) were used for identification and inspection of defects. In addition, energy-dispersive X-ray microanalysis (EDX) was used to determine the composition of the particle or contamination. During failure analysis, seven kinds of killer defects and three killer particles were found in Flat ROM devices. The possible root causes, mechanisms and elimination solutions of these killer defects/particles were also discussed.

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Reballing/Rebumping Ultra-Fine Pitch Packages Less Than 0.5 mm Pitch for FA

ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2014p0160 ◽

2014 ◽

Author(s):

Bob Wettermann

Keyword(s):

Solder Joint ◽

Failure Analysis ◽

Joint Strength ◽

Semiconductor Devices ◽

X Ray ◽

Fine Pitch ◽

Manual Methods

Abstract As the pitch and package sizes of semiconductor devices have shrunk and their complexity has increased, the manual methods by which the packages can be re-bumped or reballed for failure analysis have not kept up with this miniaturization. There are some changes in the types of reballing preforms used in these manual methods along with solder excavation techniques required for packages with pitches as fine as 0.3mm. This paper will describe the shortcomings of the previous methods, explain the newer methods and materials and demonstrate their robustness through yield, mechanical solder joint strength and x-ray analysis.

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Infra-Red Reflectance Microscopy (IRRM) for Daisy Chain Flip Chip Device Failure Analysis

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0669 ◽

2004 ◽

Author(s):

Carlo Grilletto ◽

Steve Hsiung ◽

Andrew Komrowski ◽

John Soopikian ◽

Daniel J.D. Sullivan ◽

...

Keyword(s):

Failure Analysis ◽

Flip Chip ◽

State Of The Art ◽

Failure Mechanisms ◽

Simple Metal ◽

X Ray ◽

Infra Red ◽

Cause Of Failure ◽

Reflectance Microscopy ◽

Ir Emission

Abstract This paper describes a method to "non-destructively" inspect the bump side of an assembled flip-chip test die. The method is used in conjunction with a simple metal-connecting "modified daisy chain" die and makes use of the fact that polished silicon is transparent to infra-red (IR) light. The paper describes the technique, scope of detection and examples of failure mechanisms successfully identified. It includes an example of a shorting anomaly that was not detectable with the state of the art X-ray equipment, but was detected by an IR emission microscope. The anomalies, in many cases, have shown to be the cause of failure. Once this has been accomplished, then a reasonable deprocessing plan can be instituted to proceed with the failure analysis.

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Electronic Package Failure Analysis Using TDR

ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2000p0277 ◽

2000 ◽

Author(s):

Dima A. Smolyansky

Keyword(s):

Failure Analysis ◽

Fault Location ◽

Measurement Accuracy ◽

Time Domain Reflectometry ◽

Acoustic Imaging ◽

X Ray ◽

Analysis Techniques ◽

Bga Packages ◽

Impedance Profile ◽

Nature Of Time

Abstract The visual nature of Time Domain Reflectometry (TDR) makes it a very natural technology that can assist with fault location in BGA packages, which typically have complex interweaving layouts that make standard failure analysis techniques, such as acoustic imaging and X-ray, less effective and more difficult to utilize. This article discusses the use of TDR for package failure analysis work. It analyzes in detail the TDR impedance deconvolution algorithm as applicable to electronic packaging fault location work, focusing on the opportunities that impedance deconvolution and the resulting true impedance profile opens up for such work. The article examines the TDR measurement accuracy and the comparative package failure analysis, and presents three main considerations for package failure analysis. It also touches upon the goal and the task of the failure analysts and TDR's specific signatures for the open and short connections.

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