Characterization of a photosensitive dry adhesive film for wafer level MEMS packaging

Author(s):  
Kun Zhao ◽  
Changhai Wang
Author(s):  
H. Sur ◽  
S. Bothra ◽  
Y. Strunk ◽  
J. Hahn

Abstract An investigation into metallization/interconnect failures during the process development phase of an advanced 0.35μm CMOS ASIC process is presented. The corresponding electrical failure signature was electrical shorting on SRAM test arrays and subsequently functional/Iddq failures on product-like test vehicles. Advanced wafer-level failure analysis techniques and equipment were used to isolate and identify the leakage source as shorting of metal lines due to tungsten (W) residue which was originating from unfilled vias. Further cross-section analysis revealed that the failing vias were all exposed to the intermetal dielectric spin-on glass (SOG) material used for filling the narrow spaces between metal lines. The outgassing of the SOG in the exposed regions of the via prior to and during the tungsten plug deposition is believed to be the cause of the unfilled vias. This analysis facilitated further process development in eliminating the failure mechanism and since then no failures of this nature have been observed. The process integration approach used to eliminate the failure is discussed.


2004 ◽  
Vol 13 (6) ◽  
pp. 963-971 ◽  
Author(s):  
C.H. Tsau ◽  
S.M. Spearing ◽  
M.A. Schmidt
Keyword(s):  

2015 ◽  
Vol 46 (6) ◽  
pp. 2637-2645 ◽  
Author(s):  
Thi-Thuy Luu ◽  
Nils Hoivik ◽  
Kaiying Wang ◽  
Knut E. Aasmundtveit ◽  
Astrid-Sofie B. Vardøy

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 002020-002074
Author(s):  
Christian Val ◽  
Pascal Couderc ◽  
Pierre Lartigues

The 3-D interconnection started at 3D PLUS in 1996 and led to the stacking of nearly all types of analogical and logical components, sensors, MEMS, etc for the Hi-Rel field (Space, Defence, Medical, Industrial). This technology is extremely robust (−130°C +175°C, 40000g), and is fully qualified by all worldwide most important Space Agencies and for Defence applications. A technological break started in 2002 ; It consisted in another 20 to 30 reduction factor of the weight and volume of these 3-D modules.The Z pitch is 100μm and the X Y size is given by the size of the larger die plus 100μm of polymer around it. This is a stacked of Known Good Rebuilt Wafer of full wafer level technique. The dice are received in wafers and following operations are carried out :- Pick, flip and place of the good dice on a “sticking skin”- Moulding of the whole of this « pseudo wafer » in order to obtain what we call a « Known Good Rebuilt Wafer (KGRW) ». These two first steps are already developed by Infineon and mainly Freescale (RCP technique up to 300mm)- Stacking and gluing of KGRW 1, 2, 3…, n, by means of an adhesive film- Dicing of these stacked rebuilt wafers by techniques identical to the dicing of standard wafers- Metallization of the dicing streets with nickel + gold by electroless chemical plating identical to the UBM plating technique- Direct laser patterning by laser with our edge connection technique up to 100μm pitch. Below this pitch, the Thru Polymer Via (TPV) are made through the stacked wafers. The equivalent pitch will be 20μm. it can be noticed that the shielding can be made on the dicing street.- Electrical test at the stacked wafer level- Singulation of the 3D modules This approach allows using standard dice without any modification. It is multi sources and the stacking of the good rebuilt wafers allows to get an excellent yield. A development agreement has been signed with a semiconductors manufacturer. A development is in progress with the most worldwide important manufacturer of smart cards in order to integrate 5 levels of dice (including a MEMS) within a cavity of 550 μm inside the 800μm SIM card. Other applications with MEMS will be presented:- “Abandoned Sensors” for Heath Monitoring of the aircraft structure developed during the European Program: “e-Cubes” ,- Gyroscope with 6 MEMS,- Micro camera for endoscopy…- Medical applications with an important development made for 3 major pacemaker manufacturers. This « full wafer level » approach will allow to build System in Package (SiP) or “Abandoned Sensors” at very low costs, since the process uses mainly the steps of wafers building; the “panelization” allows to be in parallel processing from A to Z steps. Moreover, the use of Known Good Rebuilt Wafer like the RCP allows stacking Good wafer at the reverse what is impossible with the wafer to wafer approach.


2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001126-001174
Author(s):  
Christian Val ◽  
Pascal Couderc ◽  
Nadia Boulay

The 3-D interconnection started at 3D PLUS in 1996 and led to the stacking of nearly all types of analogical and logical components, sensors, MEMS, etc for the Hi-Rel field (Space, Defence, Medical, Industrial). This technology is extremely robust (−130 °C +175 °C, 40000g), and is fully qualified by all worldwide most important Space Agencies, for Defence applications and Harsh environment. A technological break started in 2002 ; it consisted in another 20 to 30 reduction factor of the weight and volume of these 3-D modules. The Z pitch is 100 μm and the X Y size is given by the size of the larger die plus 100 μm of polymer around it. This is a stacked of Known Good Rebuilt Wafer of full wafer level technique. The dice are received in wafers and following operations are carried out :- Pick, flip and place of the good dice on a “sticking skin”- Moulding of the whole of this « pseudo wafer » in order to obtain what we call a « Known Good Rebuilt Wafer (KGRW) ». These two first steps are already developed by Freescale (RCP technique up to 300mm), then Infineon and Nanium (ex Infineon/Quimoda) and now about ten companies are developing this 2-D approach:- Stacking and gluing of KGRW 1, 2, 3..., n, by means of an adhesive film- Dicing of these stacked rebuilt wafers by techniques identical to the dicing of standard wafers- Metallization of the dicing streets with nickel + gold by electroless chemical plating identical to the UBM plating technique- Direct laser patterning by laser with our edge connection technique up to 100 μm pitch. Below this pitch, the Thru Polymer Via (TPV) are made through the stacked wafers. The equivalent pitch will be 20 μm. it can be noticed that the shielding can be made on the dicing street.- Electrical test at the stacked wafer level- Singulation This approach allows to use standard dice without any modification. It is multi sources and the stacking of the good rebuilt wafers allows to obtain an excellent yield. A development agreement has been signed with a semiconductors manufacturer. Smart card application- A development is in progress with the most worldwide important manufacturer of smart cards in order to integrate 5 levels of dice within a cavity of 550 μm inside the 800 μm SIM card. Medical applications will be presented:- Micro modulator with 5 ASICs within a 3 mm diameter tube,- Prototypes for the major US pacemaker manufacturer (Medtronic) and one European pacemaker manufacturer (Sorin/Ela Medical). A full pacemaker module of 0,5 cm3 (16 times smaller than the standard pacemaker: 8 cm3) will be shown- Micro camera for Hard X-Ray for Philips Medical (DE). Industrial applications- Abandoned sensors for Airbus and industrial areas. This « full wafer level » approach will allow to build System in Package (SiP) or “Abandoned Sensors” at very low costs, since the process uses mainly the steps of wafers building; the “panelization” allows to be in parallel processing from A to Z steps. Moreover, the use of Known Good Rebuilt Wafer like the RCP allows to stack Good wafer at the reverse what is impossible with the wafer to wafer approach.


2011 ◽  
Vol 2011 (1) ◽  
pp. 000152-000160 ◽  
Author(s):  
Maaike Op de Beeck ◽  
Karen Qian ◽  
Paolo Fiorini ◽  
Karl Malachowski ◽  
Chris Van Hoof

A biocompatible packaging process for implantable electronic systems is described, combining biocompatibility and hermeticity with extreme miniaturization. In a first phase of the total packaging sequence, all chips are encapsulated in order to realize a bi-directional diffusion barrier preventing body fluids to leach into the package causing corrosion, and preventing IC materials such as Cu to diffuse into the body, causing various adverse effects. For cost effectiveness, this hermetic chip sealing is performed as post-processing at wafer level, using modifications of standard clean room (CR) fabrication techniques. Well known conductive and insulating CR materials are investigated with respect to their biocompatibility, diffusion barrier properties and sensitivity to corrosion. In a second phase of the packaging process, all chips of the final device should be electrically connected, applying a biocompatible metallization scheme using eg. gold or platinum. For electrodes being in direct contact with the tissue after implantation, IrOx metallization is proposed. Device assembly is the final packaging step, during which all system components such as electronics, passives, a battery,… will be interconnected. To provide sufficient mechanical support, all these components are embedded using a biocompatible elastomer such as PDMS.


2013 ◽  
Vol 59 (3) ◽  
pp. 201 ◽  
Author(s):  
Sandeep Chaturvedi ◽  
GSai Saravanan ◽  
MahadevaK Bhat ◽  
R Muralidharan ◽  
ShibanK Koul ◽  
...  

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