Stacking of Known Good Rebuilt Wafers without TSV - Industrial Applications

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001126-001174
Author(s):  
Christian Val ◽  
Pascal Couderc ◽  
Nadia Boulay

The 3-D interconnection started at 3D PLUS in 1996 and led to the stacking of nearly all types of analogical and logical components, sensors, MEMS, etc for the Hi-Rel field (Space, Defence, Medical, Industrial). This technology is extremely robust (−130 °C +175 °C, 40000g), and is fully qualified by all worldwide most important Space Agencies, for Defence applications and Harsh environment. A technological break started in 2002 ; it consisted in another 20 to 30 reduction factor of the weight and volume of these 3-D modules. The Z pitch is 100 μm and the X Y size is given by the size of the larger die plus 100 μm of polymer around it. This is a stacked of Known Good Rebuilt Wafer of full wafer level technique. The dice are received in wafers and following operations are carried out :- Pick, flip and place of the good dice on a “sticking skin”- Moulding of the whole of this « pseudo wafer » in order to obtain what we call a « Known Good Rebuilt Wafer (KGRW) ». These two first steps are already developed by Freescale (RCP technique up to 300mm), then Infineon and Nanium (ex Infineon/Quimoda) and now about ten companies are developing this 2-D approach:- Stacking and gluing of KGRW 1, 2, 3..., n, by means of an adhesive film- Dicing of these stacked rebuilt wafers by techniques identical to the dicing of standard wafers- Metallization of the dicing streets with nickel + gold by electroless chemical plating identical to the UBM plating technique- Direct laser patterning by laser with our edge connection technique up to 100 μm pitch. Below this pitch, the Thru Polymer Via (TPV) are made through the stacked wafers. The equivalent pitch will be 20 μm. it can be noticed that the shielding can be made on the dicing street.- Electrical test at the stacked wafer level- Singulation This approach allows to use standard dice without any modification. It is multi sources and the stacking of the good rebuilt wafers allows to obtain an excellent yield. A development agreement has been signed with a semiconductors manufacturer. Smart card application- A development is in progress with the most worldwide important manufacturer of smart cards in order to integrate 5 levels of dice within a cavity of 550 μm inside the 800 μm SIM card. Medical applications will be presented:- Micro modulator with 5 ASICs within a 3 mm diameter tube,- Prototypes for the major US pacemaker manufacturer (Medtronic) and one European pacemaker manufacturer (Sorin/Ela Medical). A full pacemaker module of 0,5 cm3 (16 times smaller than the standard pacemaker: 8 cm3) will be shown- Micro camera for Hard X-Ray for Philips Medical (DE). Industrial applications- Abandoned sensors for Airbus and industrial areas. This « full wafer level » approach will allow to build System in Package (SiP) or “Abandoned Sensors” at very low costs, since the process uses mainly the steps of wafers building; the “panelization” allows to be in parallel processing from A to Z steps. Moreover, the use of Known Good Rebuilt Wafer like the RCP allows to stack Good wafer at the reverse what is impossible with the wafer to wafer approach.

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 002020-002074
Author(s):  
Christian Val ◽  
Pascal Couderc ◽  
Pierre Lartigues

The 3-D interconnection started at 3D PLUS in 1996 and led to the stacking of nearly all types of analogical and logical components, sensors, MEMS, etc for the Hi-Rel field (Space, Defence, Medical, Industrial). This technology is extremely robust (−130°C +175°C, 40000g), and is fully qualified by all worldwide most important Space Agencies and for Defence applications. A technological break started in 2002 ; It consisted in another 20 to 30 reduction factor of the weight and volume of these 3-D modules.The Z pitch is 100μm and the X Y size is given by the size of the larger die plus 100μm of polymer around it. This is a stacked of Known Good Rebuilt Wafer of full wafer level technique. The dice are received in wafers and following operations are carried out :- Pick, flip and place of the good dice on a “sticking skin”- Moulding of the whole of this « pseudo wafer » in order to obtain what we call a « Known Good Rebuilt Wafer (KGRW) ». These two first steps are already developed by Infineon and mainly Freescale (RCP technique up to 300mm)- Stacking and gluing of KGRW 1, 2, 3…, n, by means of an adhesive film- Dicing of these stacked rebuilt wafers by techniques identical to the dicing of standard wafers- Metallization of the dicing streets with nickel + gold by electroless chemical plating identical to the UBM plating technique- Direct laser patterning by laser with our edge connection technique up to 100μm pitch. Below this pitch, the Thru Polymer Via (TPV) are made through the stacked wafers. The equivalent pitch will be 20μm. it can be noticed that the shielding can be made on the dicing street.- Electrical test at the stacked wafer level- Singulation of the 3D modules This approach allows using standard dice without any modification. It is multi sources and the stacking of the good rebuilt wafers allows to get an excellent yield. A development agreement has been signed with a semiconductors manufacturer. A development is in progress with the most worldwide important manufacturer of smart cards in order to integrate 5 levels of dice (including a MEMS) within a cavity of 550 μm inside the 800μm SIM card. Other applications with MEMS will be presented:- “Abandoned Sensors” for Heath Monitoring of the aircraft structure developed during the European Program: “e-Cubes” ,- Gyroscope with 6 MEMS,- Micro camera for endoscopy…- Medical applications with an important development made for 3 major pacemaker manufacturers. This « full wafer level » approach will allow to build System in Package (SiP) or “Abandoned Sensors” at very low costs, since the process uses mainly the steps of wafers building; the “panelization” allows to be in parallel processing from A to Z steps. Moreover, the use of Known Good Rebuilt Wafer like the RCP allows stacking Good wafer at the reverse what is impossible with the wafer to wafer approach.


2011 ◽  
Vol 2011 (DPC) ◽  
pp. 000836-000858 ◽  
Author(s):  
Sang Hwui Lee ◽  
Michael Khbeis

This paper reports on a successful 3D integration (3DI) of multi-purpose signal processor (MSP) chips with memory chips using die-to-wafer (D2W) and wafer-to-wafer (W2W) bonding technologies. 3D integration enables compact systems of commercial-off-the-shelf (COTS) parts with high functionality using a wafer-level process for better thinning process uniformity and high yield throughput. The3D system is comprised of commercial Flash memory bare die and MSP bare die. The bare die are face-down aligned to a 150mm diameter silicon handle wafer with alignment marks polished silicon surface. Unique features on the commercial die are detected and used for die registration using a flip-chip bonder with vision automation. An adhesive film between the die and silicon handle wafer are used for temporary bonding. After the die-to-wafer population and bonding, the die substrates are thinned at the wafer-level to a target of 60 microns for the memory die and 25 microns for the MSP die, respectively. The thinned memory die set is permanently transferred onto a 150mm diameter silicon carrier wafer using a low temperature silicon covalent wafer bonding. Following bonding, an adhesive film release process is used to separate the memory die set from the temporary handle wafer. The thinned MSP die on a second handle wafer are then aligned to the thinned memory die set using a wafer-to-wafer alignment tool, and bonded with thin-film polyimide in a high-yield, low temperature wafer bonding process, followed by the release process to separate the MSP die set from the handle wafer. Finally, the MSP/memory stack are electrically connected using a via-last through-silicon-via (TSV) process. One of the key considerations for COTS 3DI is to meet the back-end-of-line (BEOL) thermal budgets of 350–400 Celsius. Plasma-assisted preparation facilitates the reduction in thermal budget for silicon covalent bonding and is performed at 150 Celsius, followed by a long-term annealing process at 175 Celsius. Stacking of thinned die relies on low temperature polyimide bonding that is performed at 200 Celsius. Fluorine and oxygen based plasma surface activation process and CTE-matched polyimide bonding play a critical role in enabling the low temperature bonding for this 3D MSP/memory integration. The thinning and bonding processing details that are presented in this paper are essential for COTS 3DI but can also be applied to several low-profile multi-chip module and packaging applications.


2018 ◽  
Vol 47 (12) ◽  
pp. 7544-7557 ◽  
Author(s):  
Mingjun Yao ◽  
Ning Zhao ◽  
Teng Wang ◽  
Daquan Yu ◽  
Zhiyi Xiao ◽  
...  

2007 ◽  
Vol 15 (2) ◽  
pp. 32-35
Author(s):  
John Little ◽  
Dan Borah

Microfluidic devices, with their ability to manipulate and analyze nanoliter volumes of chemicals and other fluids, have attracted great interest across a broad range of research and industrial applications. Corporate and academic laboratories around the world are deeply engaged in developing manufacturing technologies for these devices, hoping to create the same kind of benefits and value that accrued from the miniaturization and large scale integration of electronic devices. The flexibility and programmability of direct laser ablation make it attractive as a fabrication technology, but many other aspects of its performance remain to be understood and characterized. Advanced confocal microscopy, which provides fast, high-resolution, threedimensional visualization and measurement of micrometer scale structure, is ideally suited to this characterization task.


Author(s):  
Alyssa Grace Gablan ◽  
Jerome Dinglasan ◽  
Frederick Ray Gomez

The rise of various Wafer technologies has been developed based on industries and applications requirement. Highest quality of material characterization is complex and requires specialized process equipment and manufacturing procedures to meet defined design standards. The paper presents distinctive glass wafer-level fabrication technology that will enhance its properties with respect to pattern recognition system (PRS) at back-end manufacturing for industrial applications. Feasibility of colored glass wafer has been built into proposed conception to manufacture wafer-level packaging. The idea from transparent to colored glass wafer came from manufacturing key challenges that cutting sequence during pattern recognition cannot be distinguished. The proposed solution will mitigate high risk of misaligned cut at wafer sawing and its potential attachment on leadframe during die attach. glass wafer dice, transparent in nature, intermittently encountered multiple PRS assist during Wafer sawing and die attach as it hardly recognizes its cutting positions. Since dependent of machine capability limitations, misaligned cut is inevitable and usually happen occasionally. Addressing its unrecognizable characteristic, proposed colored glass wafer and with visible outline and saw lane fabrication was conceptualized instead of seeking ideal and high equipment model that can differentiate its opaque feature. The colored glass wafer and with visible outline and saw lane naturally creates segmentation visibly and will not be parameter dependent during manufacturing.


2021 ◽  
Author(s):  
Alessia Teresa Silvestri ◽  
Sasan Amirabdollahian ◽  
Matteo Perini ◽  
Paolo Bosetti ◽  
Antonino Squillace

In the context of Industry 4.0, interest is increasing towards Additive Manufacturing processes due to their several advantages. Among these, the Direct Laser Deposition (DLD) is an innovative technology for additive metal part fabrication, and it is currently demonstrating its ability to revolutionize the manufacturing industry. It is particularly interesting for industrial applications in terms of reduction of waste materials by starting with fewer feedstocks, reduction of machining time by only have material where it is needed but, above all, it is interesting to extend the life of parts. Indeed, with the DLD, it is possible to repair an item or coat parts via cladding, making it more wear-resistant. It is also possible to give "another life" to broken or waste components, for example, by replacing the damaged area using new material. Moreover, particularly intriguing is the possibility to create hybrid or graded parts by varying material/alloy concentrations. This paper aims to combine the abovementioned advantages to develop tailored structures in order to accomplish complex and functional products. For this purpose, a specific case study was investigated, starting with the study of the appropriate powders to use and ending with the printing process using the DMG Mori Lasertec65. Microstructural and mechanical analyses were carried out to evaluate the products and to validate the process. The final results show the properties and performances of products obtained using this technology.


Chemosensors ◽  
2022 ◽  
Vol 10 (1) ◽  
pp. 22
Author(s):  
Sue-Yuan Fan ◽  
Sucharita Khuntia ◽  
Christine Heera Ahn ◽  
Bing Zhang ◽  
Li-Chia Tai

Recent advances in electrochemical devices have sparked exciting opportunities in the healthcare, environment, and food industries. These devices can be fabricated at low costs and are capable of multiplex monitoring. This overcomes challenges presnted in traditional sensors for biomolecules and provides us a unique gateway toward comprehensive analyses. The advantages of electrochemical sensors are derived from their direct integration with electronics and their high selectivity along with sensitivity to sense a wide range of ionic analytes at an economical cost. This review paper aims to summarize recent innovations of a wide variety of electrochemical sensors for ionic analytes for health care and industrial applications. Many of these ionic analytes are important biomarkers to target for new diagnostic tools for medicine, food quality monitoring, and pollution detection. In this paper, we will examine various fabrication techniques, sensing mechanisms, and will also discuss various future opportunities in this research direction.


Author(s):  
H Y Zheng ◽  
G K L Ng ◽  
Z L Li ◽  
X C Wang

Some recent research in laser-induced surface ripple structures, surface ablation, surface colouration, and their potential industrial applications are discussed in this article. Both wavelength and sub-wavelength periodic surface structures were observed on semiconductors such as InP and GaN/sapphire surfaces after irradiation of femtosecond laser pulses. The orientation of the periodic structures was dependant on the laser beam polarization, and the period was dependent on the incident laser fluence. Such surface periodic structures may find applications in controlling surface hydrophobic and hydrophilic properties. Excimer laser ablation of epoxy compounds from wafer level chip size packages was found to be a feasible method to expose the micron-size Au bumps for solder reflow, which is a critical process in manufacturing portable electronic products. Studies on controlled surface oxidation by laser pulses showed that a range of colours can be achieved on a stainless steel surface. Selective Cr oxidation and iron oxides were detected. The appearance of colour is the result of the light constructive interference of the transparent oxide layer and is determined by the oxide thickness and the refractive index. The potential industrial applications of the techniques are discussed.


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