Analytical prediction of switching losses in MOSFETs for variable drain-source voltage and current applications

Author(s):  
Hamed Raee ◽  
Ali Rabiei ◽  
Torbjorn Thirnger
2019 ◽  
Vol 8 (2) ◽  
pp. 3930-3935

In the modern era, the electronic equipments are widely used and it is required to maintain the supply current harmonics within the standards specified by IEC. Efforts are taken to get better power factor of these supplies using Bridgeless Interleaved Boost Converter (IBC) topology. The efficiency and the power factor of the bridgeless converter is improved in contrast to the conventional PFC as the bridged structure is eliminated. Main objective of the paper is to propose a novel Zero Voltage Switched Bridgeless IBC. This bridgeless configuration is investigated by analyzing the attributes such as output power, mark-space ratio, source voltage, input current with each other. With zero-voltage switching, the voltage regulator can engage in soft switching, which helps to minimize switching losses and electromagnetic interference. This paper also compares performance parameters such as power factor, efficiency, THD and ripple with and without ZVS in a bridgeless IBC circuit. The results show that there is a considerable ripple reduction and power factor improvement with increase in efficiency on incorporating soft switching. Replication of the projected circuit is executed in simulation and the outputs are verified using hardware implementation.


2019 ◽  
Vol 8 (3) ◽  
pp. 7713-7716

A two level VSI has output voltage either equal to positive or negative source voltage. This inverter has more ripple. In order to reduce the ripple content more number of switches are needed to produce many number of stepped voltage waveform. This improves the quality of power. This switching losses depends on the frequency of operation so when a two level inverter is operated at high frequency, the switching losses are predominant. This limits the use of such inverters. Hence, being replaced by Multilevel inverters. They have attracted academician and industry personal for medium and high-power power control. Such attractive features are available in hybrid multilevel inverter. Hence, these are preferred. They provide multi-level operation by using hybrid sources. Moreover, the number of power electronics components needed are less than conventional CMI for same voltage level. Thus, such inverters have more efficiency. In the proposed techniques, an asymmetrical hybrid multilevel inverter has been simulated using MATLAB Simulink. The results obtained have been presented for three different types of load.


Author(s):  
R. Sivakami ◽  
Thangaraj K.

Sensorless operation of permanent magnet brushless direct current (BLDC) motor drive controls the rotating speed with different applied voltage. No phase lagging is produced which leads to increase the efficiency and minimize the torque pulsation of the BLDC motor. Initially, motor can be started by following the v/f method then allows the sensorless mode after reaching the minimum speed of 500-1000rpm. The Sensorless BLDC motors are highly used due to higher efficiency, reliability power, acoustic noise, smaller, lighter, greater dynamic response, better speed versus torque characteristics, higher speed range and longer life. Thus the source voltage spikes and switching losses are reduced. This method can be demonstrated through MATLAB simulation and DSP TMS 320LF2407A is used in the experimental setup to get the output


1997 ◽  
Vol 7 (6) ◽  
pp. 603-616 ◽  
Author(s):  
David P. Schmidt ◽  
Michael L. Corradini

Vestnik MEI ◽  
2019 ◽  
Vol 1 (1) ◽  
pp. 79-85
Author(s):  
Aleksey S. Anuchin ◽  
◽  
Marina A. Gulyaeva ◽  
Dmitriy M. Shpak ◽  
Dmitriy I. Alyamkin ◽  
...  

Author(s):  
Norimichi Chinone ◽  
Yasuo Cho

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.


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