A new two-dimensional analytical model for the fully-depleted SOI four-gate transistor
2011 ◽
Vol 32
(4)
◽
pp. 044005
◽
Keyword(s):
2018 ◽
Vol 83
◽
pp. 173-179
◽
Keyword(s):
2011 ◽
Vol 11
(2)
◽
pp. 111-120
◽
Keyword(s):
1990 ◽
Vol 137
(4)
◽
pp. 291
1983 ◽
Vol 19
(2)
◽
pp. 493-502
◽
Keyword(s):
2018 ◽
Vol 114
◽
pp. 62-74
◽
Keyword(s):
1995 ◽
Vol 79
(3)
◽
pp. 293-301
◽