Thin film low voltage RF MEMS shunt capacitive switches using AlN dielectric

Author(s):  
A. Mahesh ◽  
Jyotirmoy Pathak
2012 ◽  
Vol 132 (9) ◽  
pp. 282-287 ◽  
Author(s):  
Masaaki Moriyama ◽  
Yusuke Kawai ◽  
Shuji Tanaka ◽  
Masayoshi Esashi

2015 ◽  
Vol 11 (2) ◽  
pp. 3017-3022
Author(s):  
Gurban Akhmedov

Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices.  As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Show that, thermo endurance - T0 maybe using as characteristic of thermo endurance of optic materials. If heating flow, destruction temperature and internal surface temperature is measured during test, it is possible to determine value T0 and other necessity characteristics. As a result of the taking test was lead to comparison evaluation of considered materials. Working range of heating flow and up level heating embark have been determined.


2021 ◽  
Vol 52 (S1) ◽  
pp. 566-569
Author(s):  
Yao-Hua Yang ◽  
Qi Chen ◽  
Xi-Feng Li ◽  
Jian-Hua Zhang ◽  
Jun Li

2021 ◽  
pp. 2105068
Author(s):  
Wenbo Zhao ◽  
Jieun Kim ◽  
Xiaoxi Huang ◽  
Lei Zhang ◽  
David Pesquera ◽  
...  

2021 ◽  
Vol 13 (2) ◽  
pp. 1-9
Author(s):  
Xingrui Huang ◽  
Yang Liu ◽  
Zezheng Li ◽  
Huan Guan ◽  
Qingquan Wei ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document