Dynamic On-State Resistance Characterization of GaN FET under Hard-Switching Conditions

2021 ◽  
Author(s):  
Shima Khoshzaman ◽  
Yikai Tang ◽  
Ingo Hahn
Keyword(s):  
State Resistance ◽  
Gan Fet

Short Circuit Ruggedness of 600 V SiC Trench JFETs

2020 ◽  
Vol 1004 ◽  
pp. 933-938
Author(s):  
Vinoth Sundaramoorthy ◽  
Lukas Kranz ◽  
Stephan Wirths ◽  
Marco Bellini ◽  
Gianpaolo Romano ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Operating Temperature ◽  
Short Circuit ◽  
Short Circuit Current ◽  
State Resistance ◽  
Resistance Value ◽  
A Current ◽  
Short Circuit Condition

Silicon Carbide JFETs with low on-state resistance are suitable for a number of high power applications. The static, dynamic and short circuit characterization of 600 V SiC Trench JFETs are reported in this paper. Typical JFETs fabricated with a 1.2 μm cell pitch had an on-resistance value around 40 mΩ and blocking voltages of ~600 V across the wafer. JFETs were successfully switched with a dc link voltage of 300 V, a current of 15 A and operating temperature of 125 °C. These JFETs were subjected to a short circuit condition with duration ranging from 10 μs to 45 μs at a dc link voltage of ~300 V, and operating temperatures of 25 °C and 125 °C. The device could withstand subsequent short circuit successfully without any failure at both 25 °C and 125 °C. The short circuit current showed consistent dependency on the applied gate voltage, when it was varied from 0 V to 15 V.

Fabrication and Characterization of 3.3-kV SiC DMOSFET with Self-Aligned Channels Formed by Tilted Ion Implantation

2019 ◽  
Vol 963 ◽  
pp. 390-393
Author(s):  
Takahiro Morikawa ◽  
Shintaroh Sato ◽  
Akio Shima
Keyword(s):  
Ion Implantation ◽  
Threshold Voltage ◽  
Experimental Results ◽  
Channel Formation ◽  
Electrical Measurements ◽  
Blocking Voltage ◽  
Fabrication And Characterization ◽  
State Resistance

SiC DMOSFET with self-aligned channels was fabricated and characterized. The process features self-aligned channel formation by utilizing tilted ion implantation. We confirmed that channel areas were successfully formed along both sides of the stripe cell. Electrical measurements revealed that the characteristics of the fabricated DMOSFET chips had sufficiently high blocking voltage and moderate values of threshold voltage and on-state resistance. These experimental results show the proposed process can be an easy option for fabrication of SiC DMOSFET.

Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches

2012 ◽  
Vol 717-720 ◽  
pp. 301-304 ◽  
Author(s):  
Cameron Hettler ◽  
William W. Sullivan III ◽  
James Dickens
Keyword(s):  
Rise Time ◽  
Low Voltage ◽  
Pulsed Laser ◽  
Recombination Lifetime ◽  
Semiconductor Switches ◽  
Annealed Material ◽  
Photoconductivity Decay ◽  
Microwave Probe ◽  
State Resistance

Annealing of high purity semi-insulating (HPSI) 4H-SiC is investigated as a method to improve bulk photoconductive semiconductor switches through recombination lifetime modification. Five samples of HPSI 4H-SiC were annealed at 1810 °C for lengths of time ranging from 3 to 300 minutes. The recombination lifetime of the unannealed and annealed samples was measured using a contactless microwave photoconductivity decay (MPCD) system. The MPCD system consists of a 35 GHz continuous microwave probe and a tripled Nd:YAG pulsed laser. The recombination lifetime was increased from 6 ns, as received, up to 185 ns by annealing for 300 minutes. To experimentally verify switch improvements, identical switches from unannealed and annealed material were fabricated and tested at low voltage. The unannealed device generated a 15 ns pulse with a 2 ns rise-time. The annealed device conducted for upwards of 300 ns with a comparable 2 ns rise-time. The increased recombination lifetime resulted in lower on-state resistance and increased energy transfer.

scholarly journals Cryogenic Characterization of Commercial SiC Power MOSFETs

2015 ◽  
Vol 821-823 ◽  
pp. 777-780 ◽  
Author(s):  
Han Chen ◽  
Peter M. Gammon ◽  
V.A. Shah ◽  
C.A. Fisher ◽  
Chun Chan ◽  
...  
Keyword(s):  
The Body ◽  
Total Power ◽  
Switching Speed ◽  
Power Mosfets ◽  
Turn On ◽  
Current Voltage ◽  
Static And Dynamic Tests ◽  
Cryogenic Chamber ◽  
State Resistance

The cryogenic performance of two commercially available SiC power MOSFETs are presented in this work. The devices are characterised in static and dynamic tests at 10 K intervals from 20-320 K. Static current-voltage characterisation indicates that at low temperatures threshold voltage, turn-on voltage, on-state resistance, transconductance, and the body diode turn-on voltage all increase while saturation current decreases. Dynamic, 60 V, 3A switching tests within the cryogenic chamber are also reported and the trends of switching speed, losses, and total power losses, which rise at low temperature, are presented. Overall, both MOSFETs are fully operable down to 30 K with both positive and negative changes in behaviour.

Morphological Characterization of Mycobacteriophage R1

1974 ◽  
Vol 32 ◽  
pp. 254-255
Author(s):  
B. L. Soloff ◽  
T. A. Rado
Keyword(s):  
Carbon Source ◽  
Stationary Phase ◽  
Growth Phase ◽  
Minimal Medium ◽  
Morphological Characterization ◽  
Logarithmic Growth Phase ◽  
Complete Lysis ◽  
Lysogenic Culture ◽  
Logarithmic Growth

Mycobacteriophage R1 was originally isolated from a lysogenic culture of M. butyricum. The virus was propagated on a leucine-requiring derivative of M. smegmatis, 607 leu−, isolated by nitrosoguanidine mutagenesis of typestrain ATCC 607. Growth was accomplished in a minimal medium containing glycerol and glucose as carbon source and enriched by the addition of 80 μg/ ml L-leucine. Bacteria in early logarithmic growth phase were infected with virus at a multiplicity of 5, and incubated with aeration for 8 hours. The partially lysed suspension was diluted 1:10 in growth medium and incubated for a further 8 hours. This permitted stationary phase cells to re-enter logarithmic growth and resulted in complete lysis of the culture.

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