scholarly journals Cryogenic Characterization of Commercial SiC Power MOSFETs

2015 ◽  
Vol 821-823 ◽  
pp. 777-780 ◽  
Author(s):  
Han Chen ◽  
Peter M. Gammon ◽  
V.A. Shah ◽  
C.A. Fisher ◽  
Chun Chan ◽  
...  
Keyword(s):  
The Body ◽  
Total Power ◽  
Switching Speed ◽  
Power Mosfets ◽  
Turn On ◽  
Current Voltage ◽  
Static And Dynamic Tests ◽  
Cryogenic Chamber ◽  
State Resistance

The cryogenic performance of two commercially available SiC power MOSFETs are presented in this work. The devices are characterised in static and dynamic tests at 10 K intervals from 20-320 K. Static current-voltage characterisation indicates that at low temperatures threshold voltage, turn-on voltage, on-state resistance, transconductance, and the body diode turn-on voltage all increase while saturation current decreases. Dynamic, 60 V, 3A switching tests within the cryogenic chamber are also reported and the trends of switching speed, losses, and total power losses, which rise at low temperature, are presented. Overall, both MOSFETs are fully operable down to 30 K with both positive and negative changes in behaviour.

Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C

2016 ◽  
Vol 858 ◽  
pp. 885-888 ◽  
Author(s):  
Yuichiro Nanen ◽  
Masatoshi Aketa ◽  
Yuki Nakano ◽  
Hirokazu Asahara ◽  
Takashi Nakamura
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Electrical Characterization ◽  
Transfer Time ◽  
Static Characteristics ◽  
Power Mosfets ◽  
Turn On ◽  
Switching Losses ◽  
Gate Resistance

Dynamic and static characteristics of SiC power MOSFETs at high temperature up to 380°C were investigated. Investigated devices have exhibited a behavior as a normally-off MOSFET even at such high temperature as 380°C. Temperature dependence of the MOSFET characteristics are reported in this paper, such as threshold voltage (VTH), on-resistance, internal gate resistance, and turn-on and turn-off losses (EON, EOFF). EON decreases and EOFF increases with increased temperature. Temperature dependence of switching losses is affected by transfer time of VDS, which was mainly determined from VTH.

Comparison of Current – Voltage Characteristics of N and P Type 6H-SiC Schottky Diodes

2000 ◽  
Vol 640 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
Y. Gao ◽  
T. S. Sudarshan
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Turn On ◽  
Current Voltage ◽  
Forward Voltage Drop ◽  
P Type ◽  
State Resistance

ABSTRACTForward and reverse current – voltage (I–V) characteristics of N and P-type Schottky diodes on 6H-SiC are compared in a temperature range of room temperature to 550K. While the room temperature I–V characteristics of the N-type Schottky diode after turn-on is more or less linear up to ∼ 100 A/cm2, the I–V characteristics of the P-type Schottky diode shows a non-linear behavior even after turn-on, indicating a variation in the on-state resistance with increase in forward current. For the first time it is shown that at high current densities (> 210 A/cm2) the forward voltage drop across P type Schottky diodes is lower than that across N type Schottky diodes on 6H-SiC. High temperature measurements indicate that while the on-state resistance of N type Schottky diodes increases with increase in temperature, the on-state resistance of P type Schottky diodes decreases with increase in temperature until a certain temperature. While the N-type diodes seem to have soft breakdown characteristics, the P-type diodes exhibit more or less abrupt breakdown characteristics.

Studies on the Characterization of Factor VIII and a Co-factor VIII

1974 ◽  
Vol 31 (02) ◽  
pp. 328-338
Author(s):  
M. M. P Paulssen ◽  
H. L. M. A Vandenbussche-Scheffers ◽  
P. B Spaan ◽  
T de Jong ◽  
M. C Planje
Keyword(s):  
Molecular Weight ◽  
Factor Viii ◽  
The Body ◽  
Haemophilia A ◽  
Von Willebrand's Disease ◽  
Von Willebrand’S Disease ◽  
Polysaccharide Content ◽  
Plasma Factor ◽  
Two Factors

SummaryFactor VIII occurs in the body in two different forms. In lymph factor VIII is bound to chylomicra. In plasma, factor VIII is bound to a protein.After delipidation of chylomicra we obtained a glycoprotein with a high polysaccharide content and a molecular weight of approx. 160,000.In plasma, factor VIII is attached to a protein which is present in normal concentrations in plasma of patients with haemophilia A and in serum (co-factor VIII).This factor is deficient in both the plasma and the serum of patients with von Willebrand’s disease.The binding between factor VIII and co-factor VIII is reversible.Some properties of these two factors are described.

The Sober Bacchae: Dance as Phenomenal Limitation in Nietzsche

2019 ◽  
Vol 37 (1) ◽  
pp. 59-76
Author(s):  
Monique Lyle
Keyword(s):  
World View ◽  
The Body ◽  
Specific Function ◽  
Alain Badiou ◽  
Classical Greece ◽  
Birth Of Tragedy

This essay seeks to dispel entrenched critical opinion regarding dance across Nietzsche's writings as representative of Dionysian intoxication alone. Taking as its prompt the riposte of Alain Badiou, ‘Nietzsche is miles away from any doctrine of dance as a primitive ecstasy’ and ‘dance is in no way the liberated bodily impulse, the wild energy of the body’, the essay uncovers the ties between dance and Apollo in the Nietzschean theory of art while qualifying dance's relation to Dionysus. Primarily through an analysis of The Dionysiac World View and The Birth of Tragedy, the essay seeks to illuminate enigmatic statements about dance in Nietzsche (‘in dance the greatest strength is only potential, although it is betrayed by the suppleness of movement’ and ‘dance is the preservation of orderly measure’). It does this through an elucidation of the specific function of dance in Nietzsche's interpretation of classical Greece; via an assessment of the difficulties associated with the Nietzschean understanding of the bacchanal; and lastly through an analysis of Nietzsche's characterization of dance as a symbol. The essay culminates in a discussion of dance's ties to Nietzschean life affirmation; here the themes of physico-phenomenal existence, joy and illusion in Nietzsche are surveyed.

In-vivo evaluation of cisplatin nanoparticles encompass natural polymer

2020 ◽  
Vol 6 (1) ◽  
pp. 1-7
Author(s):  
Bhavani J ◽  
Sunil Kumar Prajapati ◽  
Ravichandran S
Keyword(s):  
Tumor Volume ◽  
Nitrogen Mustard ◽  
Common Type ◽  
The Body ◽  
Nano Particles ◽  
Natural Polymer ◽  
Drinking Alcohol ◽  
In Vivo Evaluation

Cancer is assemblage diseases involving abnormal cell growth amid the potential of spread to other parts of the body due to tobacco use are the cause of about of cancer deaths. Another 10% is due to obesity, poor diet & drinking alcohol. In 2012 about 14.1 million new cases of cancer occurred globally. In females, the most common type is breast cancer. Cisplatin also known as cytophosphane is a nitrogen mustard alkylating agent from the oxazophosphinans groups were used to treat cancers & autoimmune disorders. Based on the above reasons I will fix the aim Preparation characterization of Cisplatin- nano particles  &  its anticancer activity. Solid tumor volume examination report showed that the assessment of different day indication 15,20,25 & 30th variations of different groups of tumor volumes were decreased CPG Nanoparticles (100 mg/kg)+ DAL(15th day 4.97±0.24↓), (20th day 0.6±0.13↓), (25th day 1.35±0.30↓) & (30th day 1.89±0.13↓).

scholarly journals Potential use of molecular and structural characterization of the gut bacterial community for postmortem interval estimation in Sprague Dawley rats

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Huan Li ◽  
Siruo Zhang ◽  
Ruina Liu ◽  
Lu Yuan ◽  
Di Wu ◽  
...  
Keyword(s):  
High Throughput Sequencing ◽  
Interval Estimation ◽  
The Body ◽  
Taxon Richness ◽  
Time Since Death ◽  
Sprague Dawley ◽  
Sprague Dawley Rats ◽  
Level Data ◽  
Species Taxon

AbstractOnce the body dies, the indigenous microbes of the host begin to break down the body from the inside and play a key role thereafter. This study aimed to investigate the probable shift in the composition of the rectal microbiota at different time intervals up to 15 days after death and to explore bacterial taxa important for estimating the time since death. At the phylum level, Proteobacteria and Firmicutes showed major shifts when checked at 11 different intervals and emerged at most of the postmortem intervals. At the species level, Enterococcus faecalis and Proteus mirabilis showed a downward and upward trend, respectively, after day 5 postmortem. The phylum-, family-, genus-, and species-taxon richness decreased initially and then increased considerably. The turning point occurred on day 9, when the genus, rather than the phylum, family, or species, provided the most information for estimating the time since death. We constructed a prediction model using genus-level data from high-throughput sequencing, and seven bacterial taxa, namely, Enterococcus, Proteus, Lactobacillus, unidentified Clostridiales, Vagococcus, unidentified Corynebacteriaceae, and unidentified Enterobacteriaceae, were included in this model. The abovementioned bacteria showed potential for estimating the shortest time since death.

scholarly journals Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 735
Author(s):  
Fortunato Pezzimenti ◽  
Hichem Bencherif ◽  
Giuseppe De Martino ◽  
Lakhdar Dehimi ◽  
Riccardo Carotenuto ◽  
...  
Keyword(s):  
Drain Current ◽  
Oxide Semiconductor ◽  
Temperature Dependent ◽  
Channel Mobility ◽  
Blocking Voltage ◽  
Current Voltage ◽  
Wide Range ◽  
Temperature Ranges ◽  
Joint Contribution ◽  
State Resistance

A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias conditions. In particular, the most penalizing native defects in the starting substrate (i.e., EH6/7 and Z1/2) as well as the fixed oxide trap concentration and the density of states (DoS) at the 4H-SiC/SiO2 interface are carefully taken into account. The temperature-dependent physics of the interface traps are considered in detail. Scattering phenomena related to the joint contribution of defects and traps shift the MOSFET threshold voltage, reduce the channel mobility, and penalize the device current capabilities. However, while the MOSFET on-state resistance (RON) tends to increase with scattering centers, the sensitivity of the drain current to the temperature decreases especially when the device is operating at a high gate voltage (VGS). Assuming the temperature ranges from 300 K to 573 K, RON is about 2.5 MΩ·µm2 for VGS > 16 V with a percentage variation ΔRON lower than 20%. The device is rated to perform a blocking voltage of 650 V.

Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition

2019 ◽  
Vol 49 (3) ◽  
pp. 1993-2002
Author(s):  
Manuel A. Hernández-Ochoa ◽  
Humberto Arizpe-Chávez ◽  
Rafael Ramírez-Bon ◽  
Alain Pérez-Rodríguez ◽  
Manuel Cortez-Valadez ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Sol Gel ◽  
Multilayer Films ◽  
Current Voltage
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