On the difference of temperature dependence of metal gate and poly gate SOI MOSFET threshold voltages

2008 ◽  
Author(s):  
Shu-Jen Han ◽  
Xinlin Wang ◽  
Paul Chang ◽  
Dechao Guo ◽  
Myung-Hee Na ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Metal Gate ◽  
Soi Mosfet ◽  
Threshold Voltages ◽  
The Difference

Effect of ring substituents on the fluorescence spectra of substituted diarylcarbenes

1988 ◽  
Vol 66 (3) ◽  
pp. 491-494 ◽  
Author(s):  
J. C. Scaiano ◽  
D. Weir
Keyword(s):  
Free Radical ◽  
Temperature Dependence ◽  
Fluorescence Spectra ◽  
Excellent Correlation ◽  
Emission Data ◽  
The Difference

The fluorescence spectra of a series of ring-substituted diarylcarbenes have been examined. The solution spectra are generally red shifted by 25–30 nm with respect to the band positions in matrices at 77 K. The difference is believed to reflect emission from non-relaxed conformations at 77 K. Both electron-withdrawing and -donating substituents lead to red shifts in the emission. These shifts are essentially additive, and the carbene emission data show an excellent correlation with free radical fluorescence data for the corresponding diarylmethyl radicals. The temperature dependence of excited carbene lifetimes have been examined for a few representative examples.

Evaluation of Low-Temperature Properties and the Fragility of Asphalt Binders with Non-Arrhenius Viscosity–Temperature Dependence

2005 ◽  
Vol 1901 (1) ◽  
pp. 44-51 ◽  
Author(s):  
Huachun Zhai ◽  
Delmar Salomon
Keyword(s):  
Temperature Dependence ◽  
Asphalt Binders ◽  
Arrhenius Behavior ◽  
Direct Tension ◽  
Different Temperatures ◽  
Rotational Viscosity ◽  
Liquid Fragility ◽  
The Difference ◽  
Critical Cracking Temperature ◽  
Experimental Values

Rotational viscosities of different asphalt binders were determined at temperatures between 80°C and 185°C. Viscosity–temperature dependence of asphalt binders was described with the use of the Vogel–Tammann–Fulcher (VTF) and the William–Landel–Ferry (WLF) equations. The Vogel temperature ( Tv) and the glass transition temperature ( Tg) for different asphalt binders were determined by fitting experimental values of viscosity at different temperatures with these two equations. For asphalt binders, the difference between Tv and Tg was about 40K. Effects of asphaltenes, aging, chemical modification, and polymer content on these temperatures were evaluated. As asphaltene content increased, both temperatures, Tv and Tg, increased. Different polymers showed different effects on these temperatures. The values of Tv and Tg were correlated with the critical cracking temperature ( Tcr) determined through use of a bending beam rheometer and a direct tension tester. The results suggested that the correlations between Tv, Tg, and Tcr could be used to determine Tcr from the rotational viscosity results tested at high temperature. With simple rotational measurements, a quick estimation of Tcr of asphalt binders could be obtained. Liquid fragility theory was also used to study Tg of asphalt binders. Parameters determined with the VTF and WLF equations indicated that asphalt binders behaved as fragile liquids because of their non-Arrhenius behavior in the temperature range studied.

scholarly journals Design and Analysis of Nanoscaled Recessed-S/D SOI MOSFET-Based Pseudo-NMOS Inverter for Low-Power Electronics

2019 ◽  
Vol 2019 ◽  
pp. 1-12 ◽  
Author(s):  
Anjali Priya ◽  
Nilesh Anand Srivastava ◽  
Ram Awadh Mishra
Keyword(s):  
Threshold Voltage ◽  
Propagation Delay ◽  
Silicon On Insulator ◽  
Device Performance ◽  
Gate Length ◽  
Metal Gate ◽  
Short Channel ◽  
Fully Depleted ◽  
Soi Mosfet ◽  
Silvaco Atlas

In this paper, a comparative analysis of nanoscaled triple metal gate (TMG) recessed-source/drain (Re-S/D) fully depleted silicon-on-insulator (FD SOI) MOSFET has been presented for the design of the pseudo-NMOS inverter in the nanometer regime. For this, firstly, an analytical modeling of threshold voltage has been proposed in order to investigate the short channel immunity of the studied device and also verified against simulation results. In this structure, the novel concept of backchannel inversion has been utilized for the study of device performance. The threshold voltage has been analyzed by varying the parameters of the device like the ratio of metal gate length and the recessed-source/drain thickness for TMG Re-S/D SOI MOSFET. Drain-induced barrier lowering (DIBL) has also been explored in terms of recessed-source/drain thickness and the metal gate length ratio to examine short channel effects (SCEs). For the exact estimation of results, the comparison of the existing multimetal gate structures with TMG Re-S/D SOI MOSFET has also been taken under study in terms of electrostatic performance, i.e., threshold voltage, subthreshold slope, and on-off current ratio. These structures are investigated with the TCAD numerical simulator from Silvaco ATLAS. Furthermore, for the first time, TMG Re-S/D FD SOI MOSFET-based pseudo-NMOS inverter has been designed to observe the device performance at circuit levels. It has been found that the device offers high noise immunity with optimum switching characteristics, and the propagation delay of the studied circuit is recorded as 0.43 ps.

Methodology for Measurement of Density of Liquid Oxides

2020 ◽  
Vol 7 (2) ◽  
Author(s):  
Jan Hrbek ◽  
Bence Mészáros ◽  
Mykhaylo Paukov ◽  
Martin Kudláč
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Extreme Conditions ◽  
Nuclear Accidents ◽  
System A ◽  
Different Temperatures ◽  
Density Values ◽  
Properties Of Materials ◽  
The Difference

Abstract Measurement of physical properties of materials in extreme conditions, such as high temperature, is limited by technological challenges. Nevertheless, modeling of several phenomena relies on the existence of experimental data for their validation. In this study, a method suitable for determination of density in a liquid phase at high temperature is proposed and tested on Al2O3–ZrO2 system. A methodology for acquiring the temperature dependence of density for radioactive materials is proposed and is aimed to refine severe nuclear accidents modeling. The oxide was melted in an induction furnace with a cold crucible. The measurement was based on evaluation of the volume of the melt at different temperatures, in a range from 2100 to 2400 °C. The densities of the oxide in the solid-state and the skull-layer were measured using a pycnometer. A temperature dependence of the density was established and the results were compared with literature. The difference between existing data and the measured values in this work was less than 5%. Thus, the proposed methodology provides reliable density values in extreme conditions.

scholarly journals Temperature Dependence and Anisotropic Effects in the Thermal Properties of Hen Egg-White Lysozyme Crystals

Symmetry ◽  
2020 ◽  
Vol 12 (8) ◽  
pp. 1279
Author(s):  
Syou Maki ◽  
Seiji Fujiwara ◽  
Seiichi Tanaka ◽  
Eka Erzalia ◽  
Mizuki Kato ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thermal Properties ◽  
Temperature Dependence ◽  
Superconducting Magnet ◽  
Egg White ◽  
Hen Egg White Lysozyme ◽  
Egg White Lysozyme ◽  
Hen Egg White ◽  
The Difference ◽  
Hen Egg

We measured the thermal conductivity (λ) and thermal diffusivity (α) of tetragonal hen egg-white lysozyme (HEWL) crystals by the transient short-hot wire method. The crystals were grown by two different methods: Magnetically levitated crystals were realized with a superconducting magnet, the c-axis of which was perpendicularly orientated in the direction of the wire, and naturally grown crystals realized by the two-liquid method, grown randomly. We confirmed the temperature dependence in both the λ and α properties by measuring the variations in temperature and by statistical analysis. These properties differed slightly depending on the presence or absence of a magnetic field applied during the crystal growth. We hypothesize that the difference originated from the orientation of the crystals caused by the magnetic field. The statistical analyses demonstrated the possibility that asymmetric thermal conduction in the protein crystals provides anisotropic effects of the thermal properties.

Rutile- and anatase-type temperature-dependent pre-edge peak intensities in K-edge XANES spectra for AO (A = Mn), A 2O3 (A = Sc, Cr and Mn) and AO2 (A = Ti and V)

2018 ◽  
Vol 25 (4) ◽  
pp. 1129-1134 ◽  
Author(s):  
Tsubasa Tobase ◽  
Akira Yoshiasa ◽  
Tatsuya Hiratoko ◽  
Akihiko Nakatsuka
Keyword(s):  
Temperature Dependence ◽  
Difference Spectrum ◽  
True Temperature ◽  
Energy Position ◽  
Edge Structure ◽  
Peak Intensity ◽  
Transition Metal Element ◽  
Peak Energy ◽  
Bending Mode ◽  
The Difference

Pre-edge peaks in 3d transition-metal element (Sc, Ti, V, Cr and Mn) K-edge XANES (X-ray absorption near-edge structure) spectra in AO2 (A = Ti and V), A 2O3 (A = Sc, Cr and Mn) and AO (A = Mn) are measured at various temperatures. Quantitative comparisons for the XANES spectra were investigated by using absorption intensity invariant point normalization. The energy position of the difference peak (D peak) is obtained from the difference between the low- and high-temperature XANES spectra. There are two kinds of temperature dependence for pre-edge peak intensity: rutile- and anatase-type. The true temperature dependence of a transition to each orbital is obtained from the difference spectrum. In both anatase and rutile, the pre-edge peak positions of A2 and A3 are clearly different from the D1- and D2-peak positions. The A1 peak-top energies in both phases of VO2 differ from the D1 peak-top energies. The D-peak energy position determined by the difference spectrum should represent one of the true energies for the transition to an independent orbital. The peak-top positions for pre-edge peaks in XANES do not always represent the true energy for independent transitions to orbitals because several orbital transitions overlap with similar energies. This work suggests that deformation vibration (bending mode) is effective in determining the temperature dependence for the D-peak intensity.

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